BIN TO DEC Search Results
BIN TO DEC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 54LS154F/883C |
|
54LS154 - 4-Line to 16-Line Decoder/Demultiplexer |
|
||
| 5446/BEA |
|
5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
|
||
| 54AC138/QEA |
|
54AC138 - Decoder/Demultiplexer Single 3 to 8 - Dual marked (5962-8762201EA) |
|
||
| 54ACT139/QEA |
|
54ACT139 - Decoder/Demultiplexer Dual 2 to 4 - Dual marked (5962-8755301EA) |
|
||
| 54AC138/QFA |
|
54AC138 - Decoder/Demultiplexer Single 3 to 8 - Dual marked (5962-8762201FA) |
|
BIN TO DEC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SFT01Contextual Info: MITSUBISHI MICROCOMPUTERS 740 Family Reference Programs 4.5 Code Conversion BIN → BCD (1) Description 4-byte BIN data is converted to 5-byte BCD data. (2) Explanation The 4-byte BIN data at zero page RAM address BINDAT, BINDAT +1, BINDAT +2, and BINDAT +3 |
Original |
721vert SFT01 | |
mod02
Abstract: D 9910 b mod01 9910 mod-01 SFT02 mitsubishi 740
|
Original |
05F5E0FFH. mod02 D 9910 b mod01 9910 mod-01 SFT02 mitsubishi 740 | |
|
Contextual Info: KM718V890 256Kx18 Synchronous SRAM Document Title 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date REMARK 0.0 Initial draft Decmber. 15. 1997 Preliminary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 |
Original |
KM718V890 256Kx18 256Kx18-Bit 100-TQFP-1420A | |
|
Contextual Info: KM718V890 256Kx18 Synchronous SRAM Document Title 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date REMARK 0.0 Initial draft Decmber. 15. 1997 Preliminary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 |
Original |
KM718V890 256Kx18 256Kx18-Bit 100-TQFP-1420A | |
|
Contextual Info: KM718V890 256Kx18 Synchronous SRAM Document Title 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date REMARK 0.0 Initial draft Decmber. 15. 1997 Preliminary 0.1 Change speed symbol 6.0/6.7/7.5/8.S to 60/67/75/85, Change 7.5 bin to 7.2 |
OCR Scan |
KM718V890 256Kx18 256Kx18-Bit 100-TQFP-1420A | |
|
Contextual Info: KM736V790 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark o.o Initial draft December. 15. 1997 Preliminary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 |
OCR Scan |
KM736V790 128Kx36 128Kx36-Bit -14ELECTRONICS 100-TQFP-1420A | |
K7A403601MContextual Info: K7A403601M 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft December. 15. 1997 Preliminary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 |
Original |
K7A403601M 128Kx36 128Kx36-Bit 12elected 100-TQFP-1420A K7A403601M | |
KM736V790Contextual Info: KM736V790 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. Draft Date History Remark 0.0 Initial draft December. 15. 1997 Preliminary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 |
Original |
KM736V790 128Kx36 128Kx36-Bit 100-TQFP-1420A KM736V790 | |
KM736V790Contextual Info: KM736V790 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. Draft Date History Remark 0.0 Initial draft December. 15. 1997 Preliminary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 |
Original |
KM736V790 128Kx36 128Kx36-Bit 100-TQFP-1420A KM736V790 | |
KM736V790Contextual Info: KM736V790 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft December. 15. 1997 Preliminary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 |
Original |
KM736V790 128Kx36 128Kx36-Bit 100-TQFP-1420A KM736V790 | |
|
Contextual Info: / = T SGS-TUOMSON STLC5432 2Mbit CEPT & PRIMARY RATE CONTROLLER DEVICE PRODUCT PREVIEW ONE CHIP SOLUTION FROM PCM BUS TO TRANSFORMER CEPT STANDARD ISDN PRIMARY ACCESS CONTROLLER (COMPATIBLE WITH ETSI, OPTION 1 AND 2) HDB3/BIN ENCODER AND DECODER ON CHIP |
OCR Scan |
STLC5432 ST5451/MK50H25/MK5027 0DLi372fl | |
PVD225Q
Abstract: BRT-THT-100
|
Original |
||
XE8000
Abstract: XE8000MP XE8807A c816-objcopy TN8000 AXE 10 commands
|
Original |
TN8000 XE8000 XE8000MP XE8807A c816-objcopy AXE 10 commands | |
|
Contextual Info: KM736V790 128Kx36 Synchronous SRAM Document Tills 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft December. 15. 1997 Prelim inary 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 |
OCR Scan |
KM736V790 128Kx36 128Kx36-Bit 14ELECTRONICS 100-TQFP-1420A 15ELECTRONICS | |
|
|
|||
PVD225QContextual Info: PVD Series Parts Verification Sensor Diffuse or retroreflective sensor for error proofing of bin-picking operations Features • One-component system is easy to mount and even easier to use. Automatically operates in either diffuse or retroreflective mode, depending on the application. |
Original |
||
|
Contextual Info: N2CB1GH80BN 1Gb DDR3 B-Die SDRAM Preliminary Feature CAS Latency Frequency Speed Bin CL-nRCD-nRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ACT to PRE command period |
Original |
N2CB1GH80BN | |
|
Contextual Info: N2CB1G16DP 1Gb DDR3 D-die SDRAM Preliminary Feature CAS Latency Frequency Speed Bin CL-nRCD-nRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ACT to PRE command period |
Original |
N2CB1G16DP | |
K7n801845mContextual Info: K7N803645M K7N801845M 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History 1. Initial document. Draft Date September. 1997 Remark Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz 2. Changed DC Parameters; |
Original |
K7N803645M K7N801845M 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA K7n801845m | |
|
Contextual Info: KM736S849 KM718S949 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History 1. Initial document. Draft Date September. 1997 Remark Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz 2. Changed DC Parameters; |
Original |
KM736S849 KM718S949 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA | |
|
Contextual Info: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 0.1 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25 |
Original |
K7N327245M 512Kx72-Bit 512Kx72 K7N327249M K7N327245M 11x19 00x10 | |
MTV030N201
Abstract: wh30 12x16 mtv030n MYSON TECHNOLOGY
|
Original |
MTV030 12x16 12x18 100Typ 300mil R10Max 15Max 115Min 15Min. 100Ty MTV030N201 wh30 mtv030n MYSON TECHNOLOGY | |
K7N801845M
Abstract: K7N803645M
|
Original |
K7N803645M K7N801845M 256Kx36 512Kx18 512Kx18-Bit 167MHz 150MHz 400mA 450mA K7N801845M K7N803645M | |
|
Contextual Info: PRELIMINARY 128Kx36 Synchronous SRAM KM736V790 128Kx36-Bit Synchronous Pipelined Burst SRAM R e v . N o. H is to ry D ra ft D a te 0.0 Initial draft December. 15. 1997 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, February. 02. 1998 R e m a rk Change 7.5 bin to 7.2 |
OCR Scan |
KM736V790 128Kx36 128Kx36-Bit 100-TQFP-1420A | |
NtRAM
Abstract: K7N327245M K7N327249M
|
Original |
512Kx72 K7N327245M 512Kx72-Bit K7N327249M 11x19 NtRAM K7N327245M | |