BIFET AMPLIFIER DISCRETE SCHEMATIC Search Results
BIFET AMPLIFIER DISCRETE SCHEMATIC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TA75W01FU |
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Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505 | Datasheet | ||
TC75S102F |
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Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 | Datasheet | ||
TC75S67TU |
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Operational Amplifier, 2.2V to 5.5V, Low Noise type:VNI=6nV/√Hz@1kHz, SOT-353F | Datasheet | ||
TC75S51F |
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Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353 | Datasheet | ||
TC75S54F |
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Operational Amplifier, 1.8V to 7.0V, IDD=100μA, SOT-25/SOT-353 | Datasheet |
BIFET AMPLIFIER DISCRETE SCHEMATIC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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amelcoContextual Info: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER FEATURES rGs = 100G HIGH INPUT IMPEDANCE HIGH TRANSCONDUCTANCE ABSOLUTE MAXIMUM RATINGS YFS = 30,000µS TOP VIEW TO-72 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -55 to +150 °C |
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LS320 200mW 25-year-old, amelco | |
amelcoContextual Info: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER FEATURES rGs = 100GΩ HIGH INPUT IMPEDANCE HIGH TRANSCONDUCTANCE ABSOLUTE MAXIMUM RATINGS YFS = 30,000µS TOP VIEW TO-72 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -55 to +150 °C |
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LS320 200mW 25-year-old, amelco | |
Accelerometers
Abstract: TLV24xx TLE2161 TLV2772 ne55x TLE2082 "operational amplifier selection guide" TLE2227 Texas Instruments CMOS TLE2682
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35F0121-1SR-10
Abstract: ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR
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RF3928280W RF3928 RF3928 DS110221 35F0121-1SR-10 ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR | |
thermocouple gaasContextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF IN |
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RF3928280W RF3928 RF3928 DS110317 thermocouple gaas | |
Contextual Info: RF7411 3V WCDMA BAND 1 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm : NDA REQUIRED VBAT Features HSDPA/HSUPA/HSPA+/ LTE High Efficiency WCDMA Operation : 42.5% at POUT = +28dBm Low Voltage Positive Bias Supply 3.0V to 4.2V |
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RF7411 10-Pin, 28dBm 203mm 330mm 025mm DS111206 | |
GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
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RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar | |
ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
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RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD | |
bifet amplifier discrete schematic
Abstract: ERJ8GEYJ100V thermocouple gaas
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RF3934 RF3934 DS120202 bifet amplifier discrete schematic ERJ8GEYJ100V thermocouple gaas | |
Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical |
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RF3934 DS120306 | |
28F0181-1SR-10
Abstract: CAPACITOR 150 RED
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RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED | |
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RF3928 RF3928280W DS120508 | |
Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical |
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RF3934 RF3934 DS120306 | |
RFMD PA LTE
Abstract: RF7413 RF-741
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RF7413 10-Pin, 28dBm RF7413 203mm 330mm 025mm DS111206 RFMD PA LTE RF-741 | |
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GaN ADSContextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance |
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RF3934 RF3934 DS111121 GaN ADS | |
ATC800B5R6
Abstract: ATC800B6R8 ATC800B120
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RF3931 900MHz RF3931 DS111026 ATC800B5R6 ATC800B6R8 ATC800B120 | |
RF3928B
Abstract: power transistor gan s-band RF392
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RF3928B RF3928B DS111208 power transistor gan s-band RF392 | |
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RFHA1025 RFHA1025 96GHz 215GHz DS120928 | |
simple power supply schematic diagram
Abstract: RF3931S2 ATC800A3R3BT
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RF3931 900MHz RF3931 DS120406 simple power supply schematic diagram RF3931S2 ATC800A3R3BT | |
atc100a150
Abstract: power transistor gan s-band
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RF3928B RF3928B DS120503 atc100a150 power transistor gan s-band | |
Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz |
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RF3931 900MHz DS120406 | |
Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz |
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RF3931 900MHz RF3931 DS120202 | |
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RFHA1025 96GHz 215GHz DS120613 | |
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RF3928B DS120503 |