BI 370 TRANSISTOR Search Results

TC5022

Abstract: TC5002 TC5022BP 7 SEGMENT DISPLAY COMMON CATHODE TC-5022
Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT TC50026PJC5022BP SIUC0NMONOurHIC- - TC5002BP, TC5022BP BCD TO 7-SEGMEHT DECODER/DRIVER TC5002BP and TC5022BP are decoders to convert BCD code input to the driving signal for 7-segment display element and equipped with NPN transistors as

Contextual Info: TC5002BPJC5022BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC5002BP, TC5022BP BCD TO 7-SEGMENT DECODER/DRIVER TC5002BP and TC5022BP are decoders to convert BCD code input to the driving signal for 7-segment display element and equipped with NPN transistors as

tc5022bp

Abstract: TC5022
Contextual Info: C 2M O S TC5002BP, TC5022BP D IG IT A L IN T E G R A T E D C IR C U IT S IL IC O N M O N O L IT H IC TC5002BP, TC5022BP BCD TO 7-SEGMENT DECODER/DRIVER TC5002BP and TC5022BP are decoders to convert BCD code input to the driving signal for 7-segment display element and equipped with NPN transistors as

TC5022BP

Abstract: TC5002BP BI 370 TC-5022 tc5022
Contextual Info: TC5002BP, TC5022BP C 2MOS D IG IT A L IN T E G R A T E D CIRC UIT S ILIC O N M O N O LIT H IC TC5002BP, TC5022BP BCD TO 7-SEGMENT DECODER/DRIVER TC5002BP and TC5022BP are decoders to convert BCD code input to the driving signal for 7-segment display element and equipped with NPN transistors as

2N914

Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030
Contextual Info: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and

bi 370 transistor

Abstract: transistor BI 370 NMOS-2 TRANSISTOR BI 185 bi+370+transistor
Contextual Info: 0.25um 1P5M Logic 2.5V / 5.0V / 20V updated in 2005.03.21 Features ƒ Vdd Core/IO/HV ƒ Starting Material ƒ Well ƒ Isolation ƒ Transistor Gate Length (Ldrawn) ƒ ƒ ƒ ƒ ƒ Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization

2SC680

Abstract: 2SC1006 2SC984 2sa564 transistor 2SA564 2SC950 2SC1010 Transistor 2sc1006 transistor 2sa564 2SC952
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

bi 370 transistor e

Abstract: D44VH1 bi 370 transistor C3875 D44VH10 de3f D44VH4 D44VH D44VH7
Contextual Info: 3 875081 6 E SOLI D STATE 01 DE | 3 ö 7 S 0 f l l DDITID? □ | D VERY HIGH SPEED T '3 3 ~ l5 D44VH Series NPN POWER TRANSISTORS 30-80 VOLTS 15 AMP, 83 WATTS COMPLEMENTARY TO THE D45VH SERIES The D44VH is an NPN power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where

BI 370

Abstract: BI 340 bi 240
Contextual Info: F#9#B?J;  F98IJ7D:E<<I<EH8?%JH?#B;7:9ECFED;DJI IF;9?<?97J?EDI C7J;H?7B Standoff - Thermoplastic U.L. 94 V0. Color, Black :;I?=D Channels provide lead separation and lateral stability for components. Molded tabs retain component leads within the standoff for preassembly.

D600K

Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
Contextual Info: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.

BFP29

Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Contextual Info: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6705 ISSUE 1 - NOVEMBER 1995 - C i L . l _ U Bi C i c Z D ei c 2 r c 2 c m r m b2 Z E H 1 N P N 1 E? PNP PARTMARKING DETAIL- T6705 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage

2N914

Abstract: transistor 2N914 24si
Contextual Info: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AND V H F AM PLIFIER The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is prim a rily a universal switch b u t it is also an excellent high speed, high gain logic and memory driver at collector currents up to 500 mA.

24v ballast

Abstract: marking 18T TR marking 18t RV3135B5X
Contextual Info: T-33-7 7 ‘ RV3135B5X PHILIPS ShE INTERNATIONAL 711DßSb ]> DOHbSDS 243 • PHIN PULSED POWER TRANSISTOR FOR S-BAND RADAR NPN transistor fo r use in common-base pulsed power amplifiers fo r S-band radar 3.1 to 3.5 GHz . Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry and gold sandwich

7361

Abstract: JESD97 J-STD-020B
Contextual Info: nemco Low Profile Soldering . There are several important general soldering considerations • Recommended soldering profiles are designed to insure that the temperature of the internal construction of the capacitors does not exceed +220°C. • Positioning capacitors near components radiating heat such as power transistors should be avoided.

NTE937

Contextual Info: NTE937 Integrated Circuit JFET Input Operational Amplifier Description: The NTE937 is a monolithic JFET input operational amplifier in an 8–Lead Metal Can type package incorporating well–matched, high voltage JFET’s on the same chip with standard bi–polar transistors.

Contextual Info: NTE937 Integrated Circuit JFET Input Operational Amplifier Description: The NTE937 is a monolithic JFET input operational amplifier in an 8–Lead Metal Can type package incorporating well–matched, high voltage JFET’s on the same chip with standard bi–polar transistors.

Contextual Info: TOSHIBA 2SK2884 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt- M O S I 2SK2884 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS TO-220FL Unit in mm • Low Drain-Source ON Resistance : Rd S(ON)= 1*9^ (Typ.)

D44VH4

Abstract: D44VH7 D44VH D44VH1 D44VH10 D45VH
Contextual Info: Power Transistore D44VH Series File Number 15.23 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • F a s t S w itc h in g ts < 700 n s re s is tiv e t f < 200 n s ■ L o w V c C s a f - 0 4 V @ >C = BA TERMINAL DESIGNATIONS The D44VH series of s ilicon n-p-n pow er transistors are

D44VH7

Abstract: d44vh10
Contextual Info: D44VH Serles File Number 2350 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • Fast Switching ts < 700 ns resistive tf < 200 ns ■ Low VCE saf < 0.4V @ ;c = 8A TERMINAL DESIGNATIONS The D44VH series of silicon n-p-n power transistors are

2-10P1B

Abstract: 2SK2733
Contextual Info: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2733 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS tt-MOSIII INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Soree ON Resistance : RdS

bi 370 transistor e

Abstract: bi 370 transistor flyback Horizontal frequency kHz 15.625 BUH417 0/bi 370 transistor e
Contextual Info: rz 7 SGS-THOMSON Ä 7# X iM e iR iQ ilL isirœ œ ! £Ü H 417 CRT HORIZONTAL DEFÌECTÌÌ3N HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY . FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED

bi 370 transistor

Abstract: bi 370 transistor e transistor 010C semiconductors bi 370 transistor BI 370 BFE520 NPN power transistor spice transistor MJE -1103 mixer 5pin package bi+370+transistor
Contextual Info: Product specification Philips Semiconductors NPN wideband differential transistor BFE520 PINNING - SOT353B FEATURES • Small size • High power gain at low bias current and voltage • Temperature matched • Balanced configuration • hpE matched • Continues to operate at V qe < 1 V.

semiconductors bi 370

Abstract: WD 969
Contextual Info: philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance