BGA90 Search Results

Contextual Info: EM48AM3284LBB Revision History Revision 0.1 May. 2010 First release. Revision 0.2 (Sep. 2010) Delete CL=2 parameters Input Leakage Current = -2 A ~ +2 A Change Supply Voltage Rating = -0.5 ~ +2.3 Delete Deep Power Down Mode Change AC timing paramters: tRC & tIS

Contextual Info: ESM T M52D128324A 2E Mobile SDRAM 1M x 32Bit x 4Banks Mobile Synchronous DRAM GENERAL DESCRIPTION FEATURES The M52D128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with high performance CMOS

Contextual Info: ESMT M12D32321A 2G SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES          GENERAL DESCRIPTION The M12D32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.

BGA90

Contextual Info: ESMT M52D128324A 2E Mobile SDRAM 1M x 32Bit x 4Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with high performance CMOS

rtl nand gate

Abstract: TC240C MEGA 8515 str 6307 datasheet STR 6307 POWER TC220C TC240 Edison time delay BGA90 BGA900
Contextual Info: TC240 Boosts Systems-on-a-Chip Integration Increasing Need for System Chips The race is on among electronics manufacturers to roll out multimedia products that capture and present information in a combination of text, graphics, video, animation, and sound. Multimedia chips demand ever

EM488M3244LBB

Abstract: EM488M3244LBB-75F EM488M3244LBB-75FE
Contextual Info: eorex Preliminary EM488M3244LBB 256Mb 2Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 1.8V ±0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8

BGA676

Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Contextual Info: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: ESM T M12L128324A 2E (Preliminary) SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION „ „ „ „ „ „ „ „ JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs

EM48AM3284LBB

Contextual Info: EM48AM3284LBB Revision History Revision 0.1 May. 2010 First release. Revision 0.2 (Sep. 2010) Delete CL=2 parameters Input Leakage Current = -2 A ~ +2μA Change Supply Voltage Rating = -0.5 ~ +2.3 Delete Deep Power Down Mode Change AC timing paramters: tRC & tIS

EM488M3244VBC-75FE

Abstract: EM488M3244VBC EM488M3244VBC-75F
Contextual Info: eorex Preliminary EM488M3244VBC 256Mb 2Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 2.7V ~ 3.6V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8

Contextual Info: ESMT M12L128324A 2E SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3)

4588c

Abstract: MEGA 8515 451c data sheet str 6307 str 6307 datasheet Edison time delay
Contextual Info: TC240 Boosts Systems-on-a-Chip Integration Increasing Need for System Chips The race is on among electronics manufacturers to roll out multimedia products that capture and present information in a combination of text, graphics, video, animation, and sound. Multimedia chips demand ever

M12L128324A-5BG2E

Abstract: BGA90
Contextual Info: ESMT M12L128324A 2E (Preliminary) SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs

SDRAM

Contextual Info: ESMT M12L32321A 2G SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES          GENERAL DESCRIPTION The M12L32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.

Contextual Info: ESMT M12L128324A 2M SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (1, 2 & 3 )

Contextual Info: ESMT M12L128324A 2E Operation Temperature Condition -40°C~85°C SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs