BFY 39 Search Results

BFY34

Abstract: BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B
Contextual Info: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new development NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon R F-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to thecase.

BFY50

Abstract: BFY51 BFY50-BFY51 BFY 52 transistor
Contextual Info: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.

BFY34

Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
Contextual Info: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.

BFY 34 transistor

Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.

BFY56

Abstract: BFY56A BFY 56A ft bfy BFY 20
Contextual Info: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.

Contextual Info: Amphenol Aerospace MIL-DTL-83723, Series III, Pyle BTY/BFY/BNY-17 N Contact Stickout ESC11YE2 26482 Solderwell Contacts J Coupling Thread Optional Eyelet Contacts 5015 † When fully mated with plug this band will be covered. Band is red on military types; can be red or blue on

BFY45

Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
Contextual Info: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for

EN2997Y1

Abstract: ESC10YE1
Contextual Info: MIL-DTL-83723, Series III, Pyle I ESC10YE1 SJT EN2997Y1 / YE1 N Contact Stickout N Contact Stickout .281 7.13 38999 BTY/BFY/BNY-14 .109/.079 2.76/2.00 .062/.047 1.57/1.19 A M83723/90Y / M83723/90P II .904 Max. 22.96 Max. PART # III Hermetic Solder Mount/Weld Mount Receptacle,

BFY56

Abstract: BFY 39 transistor 300S6 BFY56A H21E
Contextual Info: BFY 56 A NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L - General purpose Usage général Dissipation Case TO -39 ~ See outline drawing C8-7 on last pages Variation de dissipation B o îtie r

transistor bf 184

Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
Contextual Info: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958

bs33

Abstract: 35-130 BSS 130 BSS 97 BFR20 BFR21 BFX39 BFX95A BFX97A BFY56
Contextual Info: PROFESSIONAL TRANSISTORS > _1 ro E UJ lL JZ. W U mA < £ _u > PACKAGE >» ~c > ia lc RANGE TYPE an d Q. uoJ UJ o (SU ) 'H i E > (SU) P O L A R IT Y General purpose switches BFR20 BFR21 NPN 35 _ 130 450 90/250 0.13 150 0.1-1000 T O -39 NPN 70 - 130 450 40/70

bss17

Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN

bfy 40

Abstract: STM 64 butterfly 7 pin GPO 80 Km upc 577 NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE stm 64 laser diode 19pin NX8566LE
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8560SJ Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560SJ Series is an Electro-Absorption EA modulator and wavelength monitor integrated, 1 550 nm Multiple Quantum Well (MQW)

thermistor 220

Contextual Info: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back

UOJ 220

Abstract: BFR18 bfx74a BFR16 BFW43 BFW44 BFX38 BFX39 BFX40 BFX41
Contextual Info: 01 — - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? OOZ 003 005 009 90 OQL 09 L 99 99 99 — — — — 00 00 00 00 00 L 001 — 98 98 98 817 — 817 98 98 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 91 91 9L 9 9 01 01 9ZL ZL 9'0 90

tfk 339

Abstract: tfk 337 BFY 39 transistor BFY56 bfy56a BEsat11 BFY 20
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein, V erstärker und Schalter Applications: General, am plifiers and switches Abmessungen in mm Dimensions in mm K o llektor m it Gehäuse verbunden C o lle cto r co n n ecte d with case

NX8300BE-CC

Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8563LA NX8563LAS
Contextual Info: DATA SHEET LASER DIODE NX8563LA Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Single Mode

BSY84

Abstract: C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341 850mW
Contextual Info: General Purpo/e Tran/i/ter/ r T Y P E NO. PD NPN >C BVc b O l v Ceo b v E bo @ T A = 2 5 °C v C E s a t @ I c / l B h p E @ V C E @ *C Cob m ax. m ax. m in ./max. f T @ •c C A SE m in. <§> <§> 1 20 V 120V 120V 120V 90V 80V 80V 80V 80V 60V 6V 6V 6V

NX8567SA

Abstract: NX8560MC Series NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8567SAM NX8567SAS 4 channel mini filter DWDM
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8567SA Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 240 km, 360 km, 600 km APPLICATIONS DESCRIPTION The NX8567SA Series is an Electro-Absorption EA modulator and

10 gb laser diode

Abstract: NX8566LE NX8560MC Series bfy 421
Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

NR3470MU

Abstract: NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE NX8565LE STM-64 10 gb laser diode NX8560MC Series
Contextual Info: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back

Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator