BFT 5F Search Results

Contextual Info: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s

TC514256

Abstract: tc514256bz tc514256bj bft 5f TC514256BFT A158 IC
Contextual Info: 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M PRELIMINARY DESCRIPTION The TC514256BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: PRELIMINARY 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M D ESC R IPTIO N The TC514266BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514266BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: MITSUBISHI LSIs PRELIMINAR^ M 5 M 5 V 2 7 8 E J ,V P -1 0 ,- 1 2 ,-1 5 _ 262144-BfT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5V278E is a family of 32768-word by 8-bit static RAMs, fabricated with the high-performance C M O S silicon-gate M OS

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

2SC1009

Abstract: JE 33 2SC1009A T108 b0552 64AL mfe 6030
Contextual Info: NEC '> < ; □ > h ^ ^ S ilic o n T ra n s is to r 2SC1009A N P N l k " ^ + '> ; U 7 F M / A M ^ ^ = i- tf> R F , ^ '> y M IX., □ > h =7 > C O N V ., 7 ^ 9 O S C ., T i t O j g / J ' i W K - i •), 7"'J .y KICffl t L t f t i t t . 3W o i > c 0b : 1.9

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

SMCJ GFR

Abstract: gez 3c smcj bfk BJE 247 447 gev GEZ DIODES SMCJ bem marking bgp GFM 57, TVS SMCJ13A
Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ series SMCJ Series Description The SMCJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

SMCJ GFR

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W RoHS SMCJ Series Description The SMCJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features

MJE I 3004

Abstract: DM74ALS132 DM74ALS132M DM74ALS132N M14A N14A fet 3004
Contextual Info: ÎP iï g # 5î December 1990 DM74ALS132 Quad 2-Input NAND Gate with Schmitt Trigger Inputs Switching specification at 50 pF Switching specifications guaranteed over full tempera­ ture and Vqc range Advanced oxide-isolated, ion-implanted Schottky TTL process

r460 FET

Abstract: tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR
Contextual Info: MOS y<T7 — N MOS Field Effect P ow er Transistor FET I i f f l > YJP ^ - M O S F E T 2SK786 Ü, N T * > & & & f g < , x 4 -y f - > ¿ X T is ' , i S i f J i f c x 4 D C - D C 3 > '< - ? l z M M T t o # i t O V d s s = 900 V , Id do = 3 O fg jtX ^ 7 ? t o

NEC a1009

Abstract: a1009a a1009 2SA1009 CI A1009A nec 2sa1009 2SA1009A 271 0276 009 2sa 945 2SA1009/A
Contextual Info: •?— S 7* 5/ — K y <7 — Silicon P o w e r Tran sistors S 2 P N P = f i? Æ A 1 9 , 1 9 A Ü ^ '> X - f 'y ^ I i f f l 2SA 1009, 2 S A 1 0 0 9 A ü f i ; i * l t K I Î / ± X Ï - y ^ > m t L T S % T O : mm x 4 - v f - > 9" ■ u % zl v 9, D C-D Cn

Contextual Info: C fì H A R R HFA3102 I S S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Features Description High Gain-Bandwidth Product fT . . . . 10GHz • High Power Gain-Bandwidth Product . . . 5GHz • High Current Gain (hFE) .

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

cd 6283 cs

Abstract: cd 6283 ic ic cd 6283 cd 6283 2SJ134 d 6283 ic IC tl 082 cn TEA-509 IC cd 6283 cs
Contextual Info: MOS M O S Field Effect P o w e r Transistor p 2 S J1 3 4 i , P * -v MOS <? \\\ h (•- J : ó x * > t i t t / i ; <, w / ^ f « k, — MOS F E T x ï 4 / ^ v f-> 7 î v VET X , 5 V ^1),'^; I C > i i x t f , t+s• o M O CO * - ? . t v % 10.6 MAX. 10.0 , 0 3.6±0.2

LA4530

Abstract: LG50
Contextual Info: L A 4 5 3 M , 4 5 3 S MU 6 1 7 i - y u y v ' j ‘j 629^ S A N Y O 3 Ô » iN f l« Â é ^ i - 0 r,rs 4 - 5 i ' “'-' ' V |t- . / - \, r~h ¿ iz i i ,:; ./ s/ V / rm u m ti -V ' • "' *.v-y •V'V ■' •- -' l.G-5.0 ~ ''" "vfi-—í r. *< ■*. v!.i'C:\J ''-'

1RFZ40

Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained

LM7W

Contextual Info: ÛMrt'inf nirt*er:EM33M TiMOS LSr 1/ Ng.ÆBB // LM 7 0 Ü7 M, LM 7 0 Ö7 HIU! J s A X Y O , D u al-P LL F re q u e n cy S y n th e size rs H OVERVIEW PINOUT . ' . . .J : / / _S — % . ././ q«ncy synthesizer lCs tea use in 250 id 3^0 MH? cordless lelephore transceivers.

BFK 53

Abstract: SNCJ15 gfm 58 general semiconductor SMCJ18A GHR 88 CG85
Contextual Info: SMCG AND SMCJ5.0 THRU 170, CA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 5.0 - 170 Volts Peak Pulse Power - 1500 Watts DO-214AB FEATURES M ODIFIED J-BEND Plastic package has Underwriters Laboratory Flammability Classification 94V-0