BFT 24 Search Results

Contextual Info: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC514280BJ / BZ / BFT / BTR - 70 TC514280BJ / BZ / BFT / BTR - 80 TC514280BJ / BZ / BFT / BTR - 1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 WORD x 18 BIT DYNAMIC RAM DESCRIPTION

Contextual Info: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC514260BJ / BZ/ BFT/ BTR - 70 TC514260BJ / BZ / BFT / BTR - 80 TC514260BJ / BZ / BFT / BTR -1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 W ORD x 16 BIT DYNAM IC RAM DESCRIPTION

BFT99

Abstract: BFT99A Siemens transistors rf BFT 50 TH marking 99
Contextual Info: SIEMENS BFT 99 BFT99A NPN Silicon RF Transistors • For low-distortion broadband amplifier output stages up to 1 GHz at collector currents up to 250 mA. • With integrated emitter stabilizing resistors. Type Marking Ordering Code BFT 99 BFT 99 Q62702-F524

A3TE

Abstract: TCFT 1103 TC514260BFT A357 TC514260BJ-70 equivalent 514260 TC514273 TC514273BJ80 HDC3 TC514260BJ
Contextual Info: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

BFT66

Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
Contextual Info: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband

TC514260B

Abstract: tc514273 TC514260BJ
Contextual Info: TOSHIBA TC514260BJ/BFT-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514260BJ/BFT is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514260BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

tc4051

Abstract: TC4052BP TC4053BP TC4051BP TC4051BTC4052BTC4053B TC4053B TC4051BF TC4051BFT TC4052BF TC4052BFT
Contextual Info: TC4051,52,53BP/BF/BFT 東芝CMOSデジタル集積回路 シリコン モノリシック TC4051BP,TC4051BF,TC4051BFT TC4052BP,TC4052BF,TC4052BFT TC4053BP,TC4053BF,TC4053BFT TC4051BP/BF/BFT Single 8-Channel Multiplexer/Demultiplexer TC4052BP/BF/BFT Differential 4- Channel

ft66

Abstract: BFT66
Contextual Info: ZSC D • fl23SbüS ÜGGM7Qä 1 « S I E G Extremely Low Noise NPN Silicon Broadband Transistors , Kr n/. 8 D ~ T -it'/r BFT 66 BFT 67 SIEMENS AKTIENGESELLSCHAF BFT 66 and BFT 67 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 , intended for input stage applications in extremely low-noise broadband

Contextual Info: • ^0^7 246 002Ô431 *îOÔ ■ - TC51V18325BJ/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM 16M DRAM Description TheTC51V18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to

TC51V16325B

Abstract: MJ-13
Contextual Info: TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to pro­

TC5118325B

Abstract: mx c511 tc5118325
Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 W ORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/ BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

TC5118160B

Contextual Info: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT

BE423

Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

T0141

Abstract: TC514260BJ
Contextual Info: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC514260BJ/BZ/BFT-7 0,-80 TENTATIVE DATA 262,144 W O RD x 16 BIT DYNAM IC RAM DESCRIPTION The TC514260BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 16 bits. The TC514260BJ/BZ/BFT utilizes TOSHIBA'S CMOS Silicon, gate process technology as well as

Contextual Info: q0^724fl 0020422 RTS TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as weil as advanced circuit techniques to pro­

tc5118180bj

Abstract: tc5118180 equivalent of BFT 51 8180b TC5118180B
Contextual Info: TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The T C 51 18180BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. The TC 5118180BJ/BFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118320B J/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description The TC5118320BJ/BFT is the new generation dynamic RAM organized 524,288 words by 18 bits. The TC5118320BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both

TC5118160

Abstract: TC5118160B
Contextual Info: TOSHIBA TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The TC 5118160BJ/BFT utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: ^ 7 2 4 0 TOSHIBA QQEÛ37B 54T TC5118165BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT HYPER PAGE EDO DYNAMIC RAM in Description The T C 5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC 5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­

Contextual Info: TOSHIBA TCH TSH ñ 0 0 2 0 4 1 3 • TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description Features 16M The T C 51 18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The T C 51 18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

BJS 33

Contextual Info: TOSHIBA TENTATIVE TC5164 5 805BJ/BFT/BJS/BFTS-40,-50 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,608-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805BJ/BFT/BJS/BFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

30227

Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
Contextual Info: BFT 92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s

Contextual Info: TOSHIBA TENTATIVE TC5164 5 405BJ/BFT/BJS/BFTS-40,-50 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16,777,216-WORD X4-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)405BJ/BFT/BJS/BFTS is an EDO (hyper page) dynamic RAM organized as 16,777,216