BFR949T Search Results

BFR949T Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BFR949T		Infineon Technologies	NPN Silicon RF Transistor	Original	PDF	68.42KB	7
BFR949T		Infineon Technologies	NPN Silicon RF transistor for low noise, high gain broadband amplifiers	Original	PDF	67.79KB	7
BFR 949T E6327		Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF BIP SC-75	Original	PDF	70.39KB
BFR949TE6327		Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF BIP SC-75	Original	PDF		7

BFR949T Price and Stock

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Infineon Technologies AG


Infineon Technologies AG BFR-949T-E6327 RF TRANS NPN 10V 9GHZ PG-SC75-3D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFR-949T-E6327	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.09	Buy Now
Infineon Technologies AG BFR949T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BFR949T		5,884			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BFR949TE6327 Discontinued
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	BFR949TE6327		759			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BFR949T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BFR949T Abstract: SC75 BFR94 Contextual Info: BFR949T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR949T VPS05996 Aug-09-2001 BFR949T SC75 BFR94	PDF
Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking	Original	BFR949T	PDF
Contextual Info: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	BFR949T VPS05996	PDF
BFR949T Abstract: MA457 MARKING C6 BFR94 Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking	Original	BFR949T BFR949T MA457 MARKING C6 BFR94	PDF
TRANSISTOR MARKING NK Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94 Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!	Original	BFR949T TRANSISTOR MARKING NK BCR108T BFR949T SC75 SC79 SCD80 BFR94	PDF
BFR94 Contextual Info: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	BFR949T VPS05996 BFR94	PDF
BFR949T Abstract: SC75 GMA marking Contextual Info: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking	Original	BFR949T VPS05996 Oct-24-2001 BFR949T SC75 GMA marking	PDF