BFQ 51 Search Results

5252 F ic

Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
Contextual Info: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65

transistor 1p3

Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
Contextual Info: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S

Transistor C G 774 6-1

Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Contextual Info: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods

zo 107 NA P 611

Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

temic 0675

Abstract: BFQ 540 application
Contextual Info: BFQ 67 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Small feedback capacitance

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

Contextual Info: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.

z0 150 81

Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
Contextual Info: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62702-F788

Contextual Info: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.

temic 0675

Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
Contextual Info: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23

k 1191

Abstract: Z0 607 MA GP 652 Q62702-F1189
Contextual Info: NPN Silicon RF Transistor BFQ 82 ● For low-noise, high-gain amplifiers up to 2 GHz. ● Linear broadband applications at collector currents up to 40 mA. ● Hermetically sealed ceramic package. ● fT = 8 GHz F = 1.1 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ72

Abstract: Q62702-F776 s parameters transistor ac 151
Contextual Info: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 32E D m a 2 3 t.3 2 o o o ib ^ m ? « s ip NPN Silicon RF Transistor 31 ^ 3 .3 B FQ 19P SIEMENS/ SPCLi SEMICONDS _ • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S

dm 0765

Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
Contextual Info: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

transistor zo 607 MA 7S

Abstract: zo 607 MA 7S zo 607 MA 7s 524 ZO 607 MA 7A zo 607 MA 7A 435 ZO 607 MA 7A 523 ZO 607 MA 7A 524 BFQ181 zo 607 MA 7A 437 cerec
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ181 Preliminary Data • For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. • / t = 8 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

pin configuration BFW 11

Abstract: BF063 BFP96 2N3570 BFP90A bfq 85 BFP91 BFT50 BFX89 2N5109
Contextual Info: 1. 1000 MHz C LA S S A LOW NOISE FOR SM ALL SIG N AL APPLICATIO NS Typ« I Pockog* ptot V B R C EO m ax. m in. (m W ) (V ) fr @ (M Hz) |m A ) C 22b* (pf) (V ) UM* (^B) (m A) > 15 6 g N TO-72 200 15 > 600 4 < 1,7* 10 2N 3570 2N 357) 2N 3572 N N N TO-72

CJW SOT-23

Abstract: bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89

S0642

Abstract: pin configuration BFW 11 BF520 BF519 BF654 BFP91 BFR92A BFS17 BFT50 BFX89
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

62702-F

Contextual Info: 3EE D • Ô23b 320 GGlfc^B? S « S I P 3 1 - 2,3 NPN Silicon RF Transistor SIEMENS/ SPCL-, SEMICONDS _ ^7P ' • For low-distortion broadband amplifiers up to 900 MHz at collector currents from 20 to 150 mA. Type Marking Ordering c o d e ^ tape and reel ^

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!