BFQ 51 Search Results

transistor marking 19P

Abstract: transistor wae
Contextual Info: BFQ 19P NPN Silicon RF Transistor • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S Type Marking Ordering code tape and reel Package BFQ 19P FE Q 62702- F 1 060

5252 F ic

Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
Contextual Info: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65

transistor 1p3

Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
Contextual Info: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S

BFQ60

Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

Transistor C G 774 6-1

Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Contextual Info: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods

zo 107 NA P 611

Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

temic 0675

Abstract: BFQ 540 application
Contextual Info: BFQ 67 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Small feedback capacitance

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

Contextual Info: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.

BFQ17P

Abstract: MARKING 7C MARKING 7A SOT89 BFQ 19 RF
Contextual Info: ÔS3SbGS 0D2M455 T 47E D ISIEG -T-33-CS NPN Silicon RF Transistor BFQ 17P — SIEMENS AKTIENGESELLSCHAF • For low-distortion broadband amplifiers up to 900 MHz at collector currents from 20 to 150 mA. Type Marking Ordering code tape and reel Package BFQ17P

z0 150 81

Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
Contextual Info: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62702-F788

Contextual Info: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.

zo 103 ma

Abstract: transistor ZO 103 MA siemens OF IC 741 SS 424 02 31 zo 103 ma 75 750 MARKING CODE F5T Q62702-F1104 BFQ 51 ZO 103 NA BFQ73S
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.

BFQ17P

Abstract: marking FD
Contextual Info: NPN Silicon RF Transistor BFQ 17P For low-distortion broadband amplifiers up to 900 MHz at collector currents from 20 to 150 mA. Type Marking Ordering code tape and reel Package BF Q 1/P FD Q 62702 - F983 SOT-89 Maximum Ratings Param eter Symbol Value Unit

k 1191

Abstract: Z0 607 MA GP 652 Q62702-F1189
Contextual Info: NPN Silicon RF Transistor BFQ 82 ● For low-noise, high-gain amplifiers up to 2 GHz. ● Linear broadband applications at collector currents up to 40 mA. ● Hermetically sealed ceramic package. ● fT = 8 GHz F = 1.1 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ72

Abstract: Q62702-F776 s parameters transistor ac 151
Contextual Info: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 32E D m a 2 3 t.3 2 o o o ib ^ m ? « s ip NPN Silicon RF Transistor 31 ^ 3 .3 B FQ 19P SIEMENS/ SPCLi SEMICONDS _ • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S

dm 0765

Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
Contextual Info: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz

ZS 633

Abstract: ZS 1052 AC cerec BFQ645 617 300 MARKING 7C
Contextual Info: SIEM EN S NPN Silicon RF Transistor BFQ 645 Preliminary Data • For low-noise, high-gain amplifiers and medium power oscillators at collector currents up to 20 mA. • fr = 9 GHz F = 1 .9 d B a t2 G H z ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ28

Abstract: Q62702-F527 CJCO D 843 Transistor
Contextual Info: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods

st ae gp 446

Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
Contextual Info: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!

A21E

Abstract: ZO 103 MA 7A 425 BFQ 58 BFQ 51 s4 marking code siemens ZO 103 transistor BFQ 263 zo 107 Q62702-F1104 transistor ZO 103 MA
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in a n te n n a an d te le c o m m u n ic a tio n s svstem s to 2 G H z ud at collector currents from 10 mA to 70 mA. / - \ • Hermetically sealed ceramic package.

BFR 965

Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
Contextual Info: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31