BFP405 ALS Search Results

rf amplifier siemens 10 ghz

Abstract: BFP405 SIEMENS BFP405 BCR400
Contextual Info: Application Note No. 019 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier with good IP3out performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET25 BFP405. The design emphasis has been on achieving high output

BFP405

Abstract: BCR400 rf amplifier siemens 10 ghz aplication note SIEMENS BFP405
Contextual Info: Application Note No. 020 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET 25 BFP405. The design emphasis has been on achieving a low noise

BFP405

Abstract: A03 RF amplifier A03 amplifier BCR400
Contextual Info: Application Note No. 021 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier shows good Noise Figure performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using Siemens SIEGET25 BFP405. The design emphasis has been on achieving a low noise

2Q394

Abstract: rx 3152 BGC405 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

Contextual Info: SIEGET
25 BFP405 NPN Silicon RF Transistor 3
For low current applications 4
For oscillators up to 12 GHz
Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

BFP405

Abstract: BGA420 S21216
Contextual Info: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

Infineon Technologies transistor 4 ghz

Abstract: BFP405 BGA420
Contextual Info: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

Contextual Info: BFP405 Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 1 Outstanding Gms = 23 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free package

Contextual Info: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101

BFP405 ALs

Abstract: BFP405
Contextual Info: SIEGET
25 BFP405 NPN Silicon RF Transistor 3
For low current applications 4
For oscillators up to 12 GHz
Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

BFP405 ALs

Contextual Info: SIEGET
25 BFP405 NPN Silicon RF Transistor 3
For low current applications 4
For oscillators up to 12 GHz
Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

SIEMENS BFP405

Abstract: marking A06 transistor A06
Contextual Info: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability

rx 3152

Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

a06 transistor

Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
Contextual Info: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line

BFP405

Abstract: AN020 BCR400W SOT343 C5
Contextual Info: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 2 0 A Lo w - N o i s e - A m p l i f i e r a t 1 . 9 G H z u s i n g B F P 4 0 5 R F & P r o t e c ti o n D e v i c e s Edition 2006-11-08 Published by Infineon Technologies AG

resonator B69500-A9107 siemens

Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
Contextual Info: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active

Dielectric Resonator Oscillator DRO

Abstract: resonator B69500-A9107 siemens B69500-A9107 dielectric resonator oscillator B69500 design dielectric resonator oscillator x-band dro design DRO microwave transistor siemens BFP405
Contextual Info: A p p l i c a t i o n N o t e , R e v . 2 . 1 , J u l y 2 00 7 A p p li c a t i o n N o t e N o . 0 0 2 Silicon Bipolar - Dielectric Resonator Oscillator D R O a t 1 0 G H z us i n g B F P 4 0 5 R F & P r o t e c ti o n D e v i c e s Edition 2007-07-12

BFP405

Abstract: AN021 BCR400W
Contextual Info: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 2 1 A Lo w - N o i s e - A m p l i f i e r s h o w s g o o d N o i s e F ig u r e p e r fo r m a n c e a t 1 . 9 G H z u s i n g B F P 40 5 R F & P r o t e c ti o n D e v i c e s

BFP405

Abstract: BCR400W
Contextual Info: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 9 A Lo w - N o i s e - A m p l i f i e r w i t h g o o d I P 3o u t p e r fo r m a n c e a t 1 . 9 G H z u s i n g B F P 40 5 R F & P r o t e c ti o n D e v i c e s

SRF 1585

Abstract: BFP405 rohde schwarz BFP405F
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 4 9 1 . 8 V , 2 .6 m A L o w N o i s e A m p l if i e r fo r 1 57 5 M H z G P S L1 F r e q ue n c y w i t h t h e B F P 4 0 5 R F T r a n s i s t o r R F & P r o t e c ti o n D e v i c e s

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

CDSCB10M7GA136

Abstract: rt data saw 433 rx tx switch 433 BFP450 10dBm saw transistor transmitter CB9 smd transistor Ceramic filter 107ma TH7122.1 murata 10.7MA ceramic filter SFECF10M7HA00
Contextual Info: Application Note Transceiver TH7122x External PA, LNA and TX/RX switch TH7122 and TH71221 with External PA and LNA The output power and the sensitivity of TH7122x transceivers for SRD are enough for many applications. They can deliver up to 10dBm output power and have a sensitivity of up to -105dBm in FSK mode.

BF 274 transistor

Abstract: CBC 548 B CBC 184 b transistor up/rse cima BF 184 transistor
Contextual Info: SIEM EN S NPN Silicon RF Transistor BFP 405 Featu res • • • For Low C urrent A pplicatio ns For O s cillators up to 12 GHz N oise Figure F = 1.15 dB at 1.8 G H z O utstand in g Gms = 22 dB at 1.8 G H z • • T ransition Frequ ency f j > 20 G H z G old m e talization for high reliability

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters