BFP 95 Search Results

NF 847 G

Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
Contextual Info: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W

Contextual Info: MITSUBISHI SOUND PROCESSORS M51167BP,BFP SINGLE CHIP PREAMPLIFIER FOR DUAL CASSETTE RECORDERS WITH NOISE REDUCTION DESCRIPTION PIN CONFIGURATION TOP VIEW The M51167BP, BFP is a semiconductor integrated circuit for use in dual cassette recorders with noise reduction systems.

BFP67

Abstract: BFP67R
Contextual Info: BFP 67 / BFP 67 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features

16 point bfp fft verilog code

Abstract: verilog code for single precision floating point multiplication IFFT verilog code for FFT 16 point verilog code for floating point adder VERILOG code for FFT 1024 point how to test fft megacore verilog code for FFT 256 point verilog code radix 4 multiplication verilog code for 64 point fft
Contextual Info: FFT/IFFT Block Floating Point Scaling Application Note 404 October 2005, ver. 1.0 Introduction The Altera FFT MegaCore® function uses block-floating-point BFP arithmetic internally to perform calculations. BFP architecture is a trade-off between fixed-point and full floating-point architecture.

H7C18

Abstract: HA17384APS sop14 164 uc3843a applications CT3000 H7C1 FRD DFG1C8
Contextual Info: ADE-204-022 Z HA17384APS, HA17384BPS/BFP, HA17385BPS/BFP High Speed Current Mode PWM Control IC for Switching Power Supply HITACHI Description HA17384A/B and HA17385B are PWM control sw itching regulator IC series suitable for highspeed, current-m ode sw itching pow er

delta hmi

Abstract: hmi 1200 power cable fault locator NCS 1704-Y15R ABB EH 250 SUBSTATION CONTROL SYSTEM 60870 RTXP 18
Contextual Info: %UHDNHU SURWHFWLRQ WHUPLQDO ZLWK DXWRPDWLF UHFORVLQJ DQG V\QFKURFKHFN HDWXUHV • Current - Breaker failure protection BFP) • Secondary system supervision - Fuse failure supervision (FUSE) • Control - Synchrocheck (SYN) - Automatic reclosing function (AR)

Block Floating Point Implementation

Abstract: tms320c54x floating point processor a 69258 specifications block diagram of of TMS320C54X radix-4 DIT FFT C code 0C72 SPRA610 n5 st pt 2245 ym 238
Contextual Info: Application Report SPRA610 - December 1999 A Block Floating Point Implementation on the TMS320C54x DSP Arun Chhabra and Ramesh Iyer Digital Signal Processing Solutions ABSTRACT Block floating-point BFP implementation provides an innovative method of floating-point

CR7006

Abstract: MIL-M-81531 CR7001-000 CR7008-000 CR7012-000 CR7014-000
Contextual Info: Introducing BFP Bubble-free Polyester Label TE Connectivity TE has developed bubble-free polyester labels, which support clear identification and readability of instructional labels. These industrial high-tack, permanent adhesive labels have unique micro-channels to allow entrapped gas from

Q62702-F1577

Abstract: 193W
Contextual Info: BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

transistor rf cm 1104

Abstract: SL 1424 11p
Contextual Info: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

Q62702-F1318

Contextual Info: NPN Silicon RF Transistor BFP 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62702-F1319

Abstract: tp 806
Contextual Info: NPN Silicon RF Transistor BFP 183 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

M51167BFP

Abstract: m51167 M-511 36P2R-A M511* mitsubishi M51167BP
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M51167BP,BFP SINGLE CHIP PREAMPLIFIER FOR DUAL CASSETTE RECORDER DESCRIPTION The M 51167 is an IC designed fo r radio C D /cassette tape players. The IC, in addition to recording and playback preamplifiers 2 ch fo r dual cassette, has

BFP92A

Contextual Info: BFP 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: 92 V

acs sot-343

Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560
Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

620 sot-343

Abstract: acs sot-343
Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

274 231

Abstract: 955 539 ic
Contextual Info: BFP 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation 2 3 1 4 94 9279 Marking: FA Plastic case SOT 143

ACS 086

Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz
Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

Contextual Info: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz

Contextual Info: BFP 193W NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz 4
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

ac 0624 transistor 17-33

Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
Contextual Info: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: T e m ic U6225B-BFP TELEFUNKEN Semiconductors 2.9 GHz PLL for SAT TV Receiver with Universal Bus Features • 2.9 GHz divide-by-16 prescaler integrated • Universal bus: PC-bus or 3-wire-bus PC-bus software compatible to U6204B 3-wire-bus software compatible to

Contextual Info: BFP 93 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: FE Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter

transistor b 1238

Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Contextual Info: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1