BF 963 Search Results

BF963

Abstract: SIEMENS marking siemens MOSFET bf 434 BB515 D270K BF 963
Contextual Info: SIEMENS Silicon N Channel MOSFET Tetrode BF 963 • For high-gain, low-distortion VHF TV and FM mixer and input stages Type Marking Ordering Code BF 963 - Q62702-F904 Pin Configuration 1 2 4 3 S D G2 Package1 Gì X-plast Maximum Ratings Parameter Symbol Values

vbfi

Abstract: sot-23 Transistor MARKING CODE ZG sot-23 MARKING CODE ZG
Contextual Info: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771 SOT-23 RBs Q62702-F1225 1=B

model QSZ4

Abstract: mje58268
Contextual Info: SPICE PARAMETER QSZ4 * QQSZ4_NPN BJT model * Date: 2006/12/13 .MODEL QQSZ4_NPN NPN + IS=2.0000E-12 + BF=502.57 + VAF=54.256 + IKF=11.644 + ISE=2.0000E-12 + NE=1.9559 + BR=67.035 + VAR=100 + IKR=1.7498 + ISC=16.329E-12 + NC=1.5722 + NK=.96397 + RE=40.000E-3

2SD2679

Contextual Info: SPICE PARAMETER 2SD2679 by ROHM TR Div. * Q2SD2679 NPN BJT model * Date: 2006/12/13 .MODEL Q2SD2679 NPN + IS=2.0000E-12 + BF=502.57 + VAF=54.256 + IKF=11.644 + ISE=2.0000E-12 + NE=1.9559 + BR=67.035 + VAR=100 + IKR=1.7498 + ISC=16.329E-12 + NC=1.5722 + NK=.96397

2SD2671

Contextual Info: SPICE PARAMETER 2SD2671 by ROHM TR Div. * Q2SD2671 NPN BJT model * Date: 2006/12/13 .MODEL Q2SD2671 NPN + IS=2.0000E-12 + BF=502.57 + VAF=54.256 + IKF=11.644 + ISE=2.0000E-12 + NE=1.9559 + BR=67.035 + VAR=100 + IKR=1.7498 + ISC=16.329E-12 + NC=1.5722 + NK=.96397

transistor BF 502

Abstract: ikr 251 54256
Contextual Info: SPICE PARAMETER QSX4 by ROHM TR Div. * QQSX4 NPN BJT model * Date: 2006/12/13 .MODEL QQSX4 NPN + IS=2.0000E-12 + BF=502.57 + VAF=54.256 + IKF=11.644 + ISE=2.0000E-12 + NE=1.9559 + BR=67.035 + VAR=100 + IKR=1.7498 + ISC=16.329E-12 + NC=1.5722 + NK=.96397 + RE=40.000E-3

BF963

Abstract: transistor bf 963 ALG TRANSISTOR ALG Transistor MARKING 2SC104
Contextual Info: TELEFUNKEN ELECTRONIC Û1C D • OOOSEMb 2 7^ -5 / BF 963 m f f l R M S I M electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for PM- and VHF TV-tuners up to 300 MHz

BF 998

Abstract: BF998 BF998R 4551
Contextual Info: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R

Contextual Info: 123456778 19ABCDEFEAEEE5CFADE541 123456789A6BC3DEF7989A6 E 33 BF 3 A8 3 7B66EC 3 B6 3 7B66EC 3 A5858 3 9EF 3 B 3 57! 3 B6 3 C96EB3 E"5CB8A 3 B6 3 8#A 3 $F2 3 %8 3 9F 3 9"C& 3 F598BCE 3 BF 3 B 3 F5C& 3 B6 3 A5858 3 F8B"E 3 'A 3 B6&3

BFR 965

Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
Contextual Info: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

mosfet bf 966

Abstract: smd bf BF965 BF963 Marking fs sot mg sot-143 BF964S marking 16 sot143 BF96
Contextual Info: -T -3 I-Ä S SIEMENS AKTIENGESELLSC HAF ÖE3SbOS GDSb27'i 4 « S I E G M7E » HF-MOS-Transistoren / RF MOS Transistors N-Channel MOSFET Tetrodes Plastic Package Type Max. ratings Characteristics CO Ï? P.O. G ps > mA mW mS Package Fig. F dB V mA f MHz dB 16.5

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

DIN 16901 140

Abstract: 1-963684-1 DIN ISO 2768 screw 99TAW
Contextual Info: LOC THIS DRAWING IS UNPUBLISHED. VERTRAULICHE tlNVERQEFFENTLICHTE ZEICHNUN6 DI5T AI PROJEKTNR. REVISIONS ÄNDERUNGEN P LTR D E BESSCCHRRIEPITBIUONNG H 45* Schröge verLangert HI 963604-3 und Bemerkung 3 hinzu. H2 StûckzahL 60 war 30 DATE 12.7.99 06.06.02

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Contextual Info: 1234567897A 123452675829AB2C8DC9E57F99C9127BD63B 123456789ABC DEF289C AC A 123456761898AA9BCDEF6E 38A8FD865C8F66 BD86FD 86!!"666666 #$%%&65C8F666666 18D'6 C8 6 -D.)6 27DA)66 28)6 *+$6,"%6,""676#66666

nh366

Abstract: 755Q
Contextual Info: 42~~+2|; 7585->?<1 4534 :9A1< <16-B 2FCPQNFO V V V V V V V V V V Gbe^ Nh3? F689:6< @ 0 1 Gbe^ Nh3?66;>89 Gbe^ Nh3? DQD5=55757=685 /98>-/> 0->- /956 DhgmZ\m ZkkZg`^f^gm 6B1 6C DhgmZ\m k^lblmZg\^ 955fW Dhbe ihp^k 655f .Zm 6B ;VED/ DhgmZ\m fZm^kbZe B`SgO71 B`Nb

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

BD656

Abstract: lm 538 bd 65
Contextual Info: 31}}*1{: 6474,=>;0 3423 98@0; ;05,A 1EBOPMEN U U U U U U U U U U Gbe^ Nh3? F689:6< ? / 0 Gbe^ Nh3?66;>89 Gbe^ Nh3? DQD5=55757=685 .87=,.= /,=, .845 DhgmZ\m ZkkZg`^f^gm 6B1 6C DhgmZ\m k^lblmZg\^ 955fW Dhbe ihp^k 655f .Zm 6B ;VED/ DhgmZ\m fZm^kbZe B`SgO71 B`Nb

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

8ch pnp DARLINGTON TRANSISTOR ARRAY

Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
Contextual Info: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array

Philips FA 261

Contextual Info: SERIES 3191 1 I — 1 - — - " i Symmetrical-Tolerance Capacitors for Switch-Mode Power Supplies. DESCRIPTION: FEATURES: Series3191 Computer-Grade Aluminum Elec­ trolytic Capacitors are specifically designed for use in switch-mode power supplies. Their con­

AT20N

Contextual Info: 8 THIS NUUINÔ !3 UNPUSLI5HK.-VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG Ç COP/RIGHT 1991 RELEASED FOR PUBLICATION FREI FUER VFROFFFFMTI ICHUNfi Ï rwrnppnpitfd ALL RIGHTS RESERVED. BY AHP INCORPORATED, alle REICHTE VORBEHALTEN. rv amp

Wr1c

Contextual Info: 2SB1308 2SD1963 Transistors I Power Transistor — 50V ^ -3 A 2SB1308 •F eatu res 1 ) Low V c E ( sa i). (M a x .— 0.45Vmax. at Icyfe 5— 1.5A/— 0.15A) 2 ) Excellent D C current gain characteristics. 3 ) Complements the 2 S D 1 963. • A b so lu te maximum ratings (T a = 2 5 ‘C )