BF 234 TRANSISTOR Search Results

bf 233

Abstract: BF233 BF234 REED RELAY 15003 bf 137
Contextual Info: BF 233 BF 234 S I L I C O N P L A N A R NPN AM MIXER OSCILLATOR, AM-FM IF AMPLIFIER The BF233 and BF 234 are silico n planar epitaxial NPN transistors in T O -18 epoxy package. They are intended fo r use in AM m ix e r/o s c illa to r stages, IF am plifiers for

BF259

Abstract: bf 233 BF257 BF 235 BF258 BF258-BF259 bf 258 bf 236 A1233
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Video-Endstufen in Schwarz-Weiß- und Farb-FS-Empfängern. Schaltungen mit hoher Betriebsspannung Applications: Video power stages in black and white and colour TV receivers.

LT 238

Abstract: BD 238 BD234
Contextual Info: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

BFN 15

Abstract: KTY13A SOT R25 16N250 KTY13C BF sot-89 CQV234 KTY13D CQV232 KTY13B
Contextual Info: High-voltage transistors Type PNP = P NPN = N Maximum ratings h mA K ;eo V Characteristics ramb = 25 °C Pto. mW ^ FE — K* V h mA V MHz Package outlines Pin configu­ Type ration No. ^ CEsat h BF 622 BFN 16 BFN 18 BFN 20 BFN 22 BFN 24 BFN 26 N N N N N

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

BFG425W

Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
Contextual Info: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power

KSC5027

Contextual Info: KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY i- HIGH SPEED SWITCHING WIDE SOA i T0-220 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic C ollector-Base Voltage V cbo Collector-Em itter Voltage VcEO Emitter-Base Voltage C ollector C urrent DC

Contextual Info: SIEGET
45 BFP540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

BFP540F

Contextual Info: SIEGET
45 BFP540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

PA 1515 transistor

Abstract: 12SW 1519b
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

2N 2905a pnp transistor

Abstract: 2904 st 2904 2N2905 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A
Contextual Info: PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL * 2 N 2 9 0 5 , A Compì, of 2N 2218, A and 2N 2219, A ïfc Preferred device D is p o s itif recommandé • LF or HF amplification A m p lifica tio n BF ou H F v CEO

BFP540

Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking ats

Abstract: BFP540F
Contextual Info: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g

q371

Abstract: EL4332 EL4332CS Q341
Contextual Info: EL4332 Data Sheet November 12, 1999 Triple 2:1 300MHz Mux-Amp AV = 2 Features The EL4332 is a triple very high speed 2:1 Multiplexer-Amplifier. It is intended primarily for component video multiplexing and is especially suited for pixel switching. The amplifiers have their gain set to 2 internally, which reduces

q371

Abstract: EL4332CS Q371 Transistor npn power amplifier circuit q381 Q301 EL4332 EL4332CS-T13 EL4332CS-T7 EL4332CSZ
Contextual Info: EL4332 Data Sheet October 4, 2004 Triple 2:1 300MHz Mux-Amp AV = 2 Features The EL4332 is a triple very high speed 2:1 MultiplexerAmplifier. It is intended primarily for component video multiplexing and is especially suited for pixel switching. The amplifiers have their gain set to 2 internally, which reduces

EL4332CS

Abstract: q371 EL4332 QCX0002 EL4332C Q301 R291
Contextual Info: Triple 2:1 300 MHz Mux-Amp AV =2 Features General Description • • • • • The EL4332C is a triple very high speed 2:1 Multiplexer-Amplifier. It is intended primarily for component video multiplexing and is especially suited for pixel switching. The amplifiers have their gain set to 2

Contextual Info: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g

TRANSISTOR MARKING YB

Abstract: BFP420F BFP540F s parameters 4ghz
Contextual Info: BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line to p v ie w " ! A T s  d ir e c tio n o f u n r e e lin g

transistor equivalent book FOR D 1047

Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor

Contextual Info: DISCRETE SEMICONDUCTORS DAT ook, halfpage M3D088 PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor PBR941

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D102 PRF957 UHF wideband transistor Product specification Supersedes data of 1999 Mar 01 1999 Jul 23 Philips Semiconductors Product specification UHF wideband transistor PRF957 FEATURES PINNING • Small size PIN