BF 199 TRANSISTOR Search Results

transistor BF 199

Abstract: BF 199 bf199 transistor A11A
Contextual Info: SIEM ENS BF 199 NPN Silicon RF Transistor • For common emitter IF TV amplifier stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 199 - Q62702-F355 Pin Configuration 1 2 3 C E Package1 TO-92 B Maximum Ratings Parameter

Contextual Info: BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR MICRO EL.ECTRDNICS CASE T0-92E BF199 is an NPN s ilic o n p la n a r e p ita x ia l tr a n s is to r designed f o r RF a m p lifie rs and video IF a m p lifie rs in common e m itte r c o n fig u ra tio n .

BF199

Abstract: TFK U 217 B transistor BF 199 TFK 505 BF 199 transistor bf 199 lamb TFK 001 TFK 505 am TFK U 111 B
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on em itter configuration,

BF441

Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62
Contextual Info: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5

transistor 2SC930

Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
Contextual Info: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

BF199 RF

Abstract: BF199 bF199 transistor transistor NPN BF199 transistor BF 199 transistor BF199 Bf 199 BF 199 transistor
Contextual Info: BF199 NPN Silicon Epitaxial Planar Transistor designed for RF applications; low feedback capacitance, especially suited for em itter-grounded IF stages in TV sets. max. Q5# 1,25 Plastic case ~ JEDEC TO -92 T O -18 compatible The case is impervious to light

BFW 10 fet

Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)

bft93

Abstract: transistor BF 199
Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!

E 94733

Abstract: AH-1 SOT23
Contextual Info: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device observe handling precaution!

Contextual Info: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

1s211

Abstract: 2I k
Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1412D

Abstract: UDN2983A equivalent 1411d M54522P equivalent DARLINGTON SINK DRIVER TLP251 equivalent M54563P equivalent ULN2804A application relay driver ic ULN2804 td62304ap
Contextual Info: TOSHIBA INTERFACE DRIVER ULN2000 TD62xxx TD62Mxxx TB62xxx SERIES SERIES SERIES SERIES Internal Internal&&External ExternalConcept Concept Applicable to Hi-Speed BiCMOS Applicable to Hi-Voltage BiCMOS Graphics MOVEMENT Video Signal MPU Pentium PowerPC ALPHA

Contextual Info: C O S /M O S INTEGRATED CIRCUIT ^ o 45 B / / hcc/hcf «m5B COS/MOS 21-STAGE COUNTER • • • • • • • • V E R Y LOW O PE R ATIN G D IS S IP A T IO N 1 mW TY P. ; @ V DD= 5V, f 0 = 1 MHz O U TPU T D R IV E R S W ITH SIN C K OR SOURCE C A P A B IL IT Y . . . . 7 m A (TYP.) @ 'V DD= 5V

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2DI75Z-100

Contextual Info: 2DI75Z-100 75a : Outline Drawings /< 7 — POWER TRANSISTOR MODULE : F e a tu re s • ffiifiiŒ High Voltage • 7 U —Jf'-f y > ? ¥ <i + — KF*3jfft • A S O *''/£*<' • Including Free W heeling Diode Excellent Safe Operating Area Insulated Type Applications

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

sot143 Marking code RHs

Abstract: IC 1296
Contextual Info: SIEMENS BFP 183 NPN Silicon RF T ransistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1382 1=C m BFP 183 f\3 II ESP: Electrostatic discharge sensitive device, observe handling precaution!

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA