BF 145 TRANSISTOR Search Results

bss17

Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN

bcw 94 b

Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Contextual Info: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60

BF441

Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62
Contextual Info: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5

BF173

Abstract: BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor
Contextual Info: BF 173 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN S ILIC IU M , PLA N A R E P IT A X IA U X The NPN planar epitaxial transistor BF 173 intended for use in L F video amplifiers un­ controlled stages of television receivers. Le transistor NPN "planar é p ita xia l" BF 173 est

tfk 186

Abstract: BF115 BF 183 transistor BF 182 transistor TFK S 186 BF 186 tfk 145 transistor bf 184 BF 184 NPN transistor BF 184 transistor
Contextual Info: V BF 115 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis 100 MHz Applications: General up to 100 MHz Abmessungen in mm Dimensions in mm 2,54 *4,8 »5,7 «0,5 -:— f - — Í t •*- 13-►

transistor bf 196

Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,

transistor bf 185

Abstract: BF185 bf 185 BF 185 transistor coe br
Contextual Info: BF 185 w Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar R F Transistor Anwendungen: Allgem ein und HF-Verstärkerstufen bis 100 MHz General and RF am plifier stages up to 100 MHz Applications: Besondere Merkmale: • Rauschmaß 4 dB

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

Tfk 680

Abstract: TFK 201 tfk 140 TFK 175 tfk 830 tfk 145 BF 184 transistor TFK 03 BF184 6 tfk 145
Contextual Info: V BF 184 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: A llg e m e in und g e re g e lte H F-V erstärke rstu fe n bis 100 M H z Applications: G e ne ra l and c o n tro lle d R F am p llfie r s ta g e s up to 100 M H z

Contextual Info: Al BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EEEL— EE CD " T R O r s i I S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS

transistor bc 7-40

Contextual Info: <£&ml- lon£Luctoi tPicxLct}., fine. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON PLANAR EPITAXIAL THANSISTOB BF 173 THE BP173 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR

PTH60G30BD150N

Abstract: PTH62H02AR180M265 PTH59F PTH61
Contextual Info: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage

431 transistor

Abstract: BJT IC Vce NE AND micro-X 2SC5433 NE681 NE681M03 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

bjt npn m03

Abstract: BR 123 m03 bjt npn 2SC5437 NE688 NE688M03 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.4±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • • PACKAGE OUTLINE M03

CM 1241 siemens

Abstract: transistor b 1238 DECT siemens transistor bf 196 bfp196
Contextual Info: SIEMENS BFP196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dE at 900MHz

Contextual Info: SIEMENS B FP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5 GHz at collector currents from 20mA to 80mA RKs Q62702-F1347 1 =C 2=E LU II ''•cfr BFP 194 CO II 03 ESP: Electrostatic discharge sensitive device, observe handling precaution!

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

07027

Abstract: 1.0037
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!

BF 245 A spice

Abstract: FZT1147A RB145 DSA003707
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO = -12V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

TRANSISTOR BC 413

Abstract: 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 transistor c 413 bc 330 transistor TRANSISTOR BC 135 TRANSISTOR BC 413 b BC413C BC414C
Contextual Info: *BC413 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , ßQ TRANSISTOR NPN S ILIC IU M PLA N A R E P IT A X IA L sfc Preferred device D is p o s itif recommandé BC 413 and BC 414 are very low noise transis­ tors intended for input stages in audio frequen­ cy amplifiers.

BF 194 transistor

Abstract: VPS05178 BFP194
Contextual Info: BFP 194 PNP Silicon RF Transistor 3
For low distortion broadband amplifier in antenna and telecommunications systems up 4 to 1.5 GHz at collector currents from 20 mA to 80 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor bfp 196

Abstract: transistor bf 196 VPS05178
Contextual Info: BFP 196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

NR SOT-143

Abstract: ta 8742 IC Q62702-F1282
Contextual Info: BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code