BES 60 Search Results

BES516-325-G-S4-L

Abstract: BES516-325-G-E5-Y-S4 BES516-325-G-E4-Y BES-516-329-G-E4-Y BES 516-356 BES-M12MD1-PSC60B-S04G BES516-329-G-E5-Y-S4 516-370-B0-C 516-370-G-E5-Y-S4 BES-M12MC1-PSC10F-S04G
Contextual Info: Inductive Sensors 1 1.19 Inductive Sensors DC 3-/4-Wire M12 sn 2 mm M12x1 flush 2 mm 0.1.6 mm M12×1 flush 2 mm 0.1.6 mm Normally-open 1 Normally-closed 2 Complementary 3 BES 516-325-B0-C BES 516-370-B0-C BES 516-325-S 4-C BES 516-370-S 4-C Normally-open 4

R04KC-POC15B-EV05

Abstract: R04KC-PSC15B-S49-00 Balluff BES R04K R04KC-POC15B-S49-00
Contextual Info: Miniblock R04 . mini size – maxi performance DC 3-Wire Quadraform Housings sn 1.5 mm 8x16×4 flush 1.5 mm 0.1.2 mm 8×16×4 flush 1.5 mm 0.1.2 mm Mini size – maxi performance PNP Normally-open Normally-closed BES R04KC-PSC15B-S49-00,13 BES R04KC-PSC15B-S26-00,2 BES R04KC-PSC15B-EV05

IEC 947-5-2

Abstract: EN60947-5-2
Contextual Info: BES M12MI-NSH80B- Inductive Sensors BES M12MI-NSH80Bcyl. M12 Sn = 8 mm DC 3-Wire quasi shielded Common Data Mounting in steel quasi shielded Rated operating distance Sn mm 8.0 Assured operating distance Sa mm 0.5,8 % <= 10 Repeatability Function indication

IEC 947-5-2

Abstract: EN60947-5-2 M12MI-PSH80B-S04G
Contextual Info: BES M12MI-PSH80B-S04G Inductive Sensors BES M12MI-PSH80B-S04G cyl. M12 Sn = 8 mm DC 3-Wire quasi shielded Common Data Mounting in steel quasi shielded Rated operating distance Sn mm 8.0 Assured operating distance Sa mm 0.5,8 % <= 10 Repeatability Function indication

BES-640P

Abstract: 640P
Contextual Info: BES-640P 400 Watt § § § 120 V DC input Temperature-controlled ball-bearing fan Powerful 25 A at 12 V The DC PC PSU BES-640P provides a 120 V DC input in order to supply computer systems for industrial applications or in mobile systems. Due to its wide input voltage range from 90 to 144 VDC this PSU remains

HgCdTe

Abstract: TWO COLOR DETECTOR BARNES ENGINEERING HGCDTE detector photoconductive InSb metal detector Barnes Engineering Company InSb spectral response IR Detectors A-600
Contextual Info: O CORP/ BARNES 45 ENGRG DE J 3 0 E T bES Bulletin A - 6 0 0 5 J ‘ T-41-41 Two-Color Infrared Sandwich Detector BARNES Series A -600 SPECIAL FEATURES TYPICAL APPLICATIONS • Thermal Imaging • Fast Response • Military Surveillance • Long Wavelength Respons

BES 516-324-S

Abstract: 516-324-S bes 516-324 Balluff BES I1A08AP2 EN60947-5-2
Contextual Info: Inductive Sensors BES 516-324-S 49-C M8x1 x 54.5 normally-open Sn=1,5mm shielded Common Data Mounting in steel Rated operating distance Sn Assured operating distance Sa Repeatability R Hysteresis Function indication Ambient temperature range Polution Degree

EN60947-5-2

Abstract: EN60947-5-2, M12x1 connector
Contextual Info: Inductive Sensors BES M12MI-PSC20B-S04G M12x1 x 65 normally-open Sn=2mm shielded Common Data Product name Mounting in steel Rated operating distance Sn Assured operating distance Sa Repeatability R Hysteresis Function indication Ambient temperature range Polution Degree

M18MG1-PSC12B-S04G

Abstract: Balluff BES m18mg BALLUF Balluff EN60947 EN60947-5-2
Contextual Info: Inductive Sensors BES M18MG1-PSC12B-S04G cyl. M18 Sn = 12 mm DC 3-Wire quasi shielded Common Data Mounting quasi shielded Rated operating distance Sn mm 12,0 Assured operating distance Sa mm 0.9.6 Repeatability % <= 5 Hysteresis % <= 10 Function indication

c100m

Abstract: MARKING CODE 56m
Contextual Info: SIEMENS BCP 54M . BCP 56M NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 51 M.BCP 53M PNP Q62702-C2595 BCP 55M BEs Q62702-C2606 BCP 56M

Contextual Info: SSM730P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating BVDSS 400V Repetitive-avalanche rated R DS ON 1.0Ω Fast switching ID 5.5A Simple drive requirement G D TO-220 S Description Power MOSFETs from Silicon Standard provide the designer with the bes

Balluff BES

Abstract: EN60947-5-2
Contextual Info: Inductive Sensors BES M08MG1-PSC60F-S49G cyl. M 8 Sn = 6 mm DC 3-Wire non-flush Common Data Mounting Rated operating distance Sn non-flush mm 6,0 Assured operating distance Sa mm 0.4,9 Repeatability % <= 5 Function indication Ambient temperature range yes

EN60947-5-2, M12x1 connector

Abstract: Balluff BES 516-325-S EN60947-5-2
Contextual Info: Inductive Sensors BES 516-325-S 4-C M12x1 x 70 normally-open Sn=2mm shielded Common Data Mounting in steel Rated operating distance Sn Assured operating distance Sa Repeatability R Hysteresis Function indication Ambient temperature range Polution Degree IEC-Code

M18ME1-PSC20F-S04G

Abstract: M18ME Balluff BES EN60947 EN60947-5-2 Balluff BES M18ME1-PSC20F-S04G BALLUF
Contextual Info: Inductive Sensors BES M18ME1-PSC20F-S04G cyl. M18 Sn = 20 mm DC 3-Wire unshielded sn: 3fach Common Data Mounting unshielded Rated operating distance Sn mm 20,0 Assured operating distance Sa mm 0.16.2 Repeatability % <= 5 Hysteresis % ≤ 20 Function indication

intel flash 28F800 topside mark

Abstract: intel DOC 28f800 errata flash device MARKing intel
Contextual Info: 28F800BV/CV/CE 28F008BV/BE SPECIFICATION UPDATE Release Date: January 1997 Order Number 297688-005 The 28F800BV/CV/CE and 28F008BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F800BV/CV/CE and 28F008BV/BEs’ behavior to

intel flash 28F800 topside mark

Abstract: flash device MARKing intel intel topside mark 28f800 29768 intel DOC flash package MARKing intel AB28F800BR
Contextual Info: 28F800BV/CV/CE 28F008BV/BE SPECIFICATION UPDATE Release Date: May 1997 Order Number 297688-006 The 28F800BV/CV/CE and 28F008BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F800BV/CV/CE and 28F008BV/BEs’ behavior to

intel flash 28F800 topside mark

Abstract: flash device MARKing intel TE28F800 intel DOC pa28f800bvb70 AB28F intel flash fpo number INTEL flash part MARKING
Contextual Info: 28F800BV/CV/CE 28F008BV/BE SPECIFICATION UPDATE Release Date: August 1996 Order Number 297688-004 The 28F800BV/CV/CE and 28F008BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F800BV/CV/CE and 28F008BV/BEs’ behavior to

Contextual Info: Alle Rechle vorbehallen/ 411 rights reserred 3 2,5/, x2L= 60,96 r- - 09185505329 09185506329 09185507329 Bes t e 1 1 -N r. Par t -No. Reference 0,76 All Oiiensinns in • Original Size OIN A A Au 2 3 An f orderungss tuf e performence level Niveau de qual i te

Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient

3D21B

Abstract: 3D21WA 3d21b tube 3D21A 3D21WB 3D21B Tubes 3D21 000-microsecond rs tube tung-sol
Contextual Info: TUNG-SOL PRODUCT BULLETIN INDUSTRIAL ELECTRON TU BES TYPE 3D21WB SEPTEMBER 1964 P U LSE BEAM POWER TETR OD E DESCRIPTION — The 3D21W B is a rugged, reliable, beam power tetrode designed for pulse service. Featuring the ability to operate under high voltage and high pulse

Modutec BL series

Abstract: MIL-M-10304 ANSI C39.1 modutec MIL-M-16125 MIL-M-16034 MIL-W-19088 MIL-M-23167 analog wattmeter MOVING IRON PANEL METER
Contextual Info: Wo rld ’s Bes t Sel e c t i o n DECADES OF EXPERIENCE Leadership For The New Millennium Jewell Instruments ll e w e J In u str m ts n e For over 60 years, Jewell Instruments and our predecessor companies have provided high quality panel meter solutions for a wide range

LifY11Y

Abstract: LIFY-11Y-0 M05ED-PSC50F-EP05 Balluff BES Balluff EN60947 EN60947-5-2 lify M05E BALLUF
Contextual Info: Inductive Sensors BES M05ED-PSC50F-EP05 cyl. M 5 Sn = 5 mm DC 3-Wire unshielded Common Data Mounting unshielded Rated operating distance Sn mm 5,0 Assured operating distance Sa mm 0.4,05 Repeatability % ≤ 10 Hysteresis % ≤ 20 Ambient temperature range

6k11

Abstract: T1651 ET-T1651 12by general electric
Contextual Info: 6K11 ET-T1651 6K11 Page 1 12-60 THREE-SECTION TRIODE ^TU BES DESCRIPTION AND RATING The 6K11 is a COMPACTRON device containing two high-mu triodes and one medium-mu triode. Features of the tube includeseparate pin connections for all three cathodes, grids, and plates; an internal shield between sections 1

28F004

Abstract: 29759* intel
Contextual Info: 28F400BV/CV/CE 28F004BV/BE SPECIFICATION UPDATE Release Date: December 1996 Order Number: 297595-012 The 28F400BV/CV/CE and 28F004BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F400BV/CV/CE and 28F004BV/BEs’ behavior to