BES 60 Search Results

BES516-325-G-S4-L

Abstract: BES516-325-G-E5-Y-S4 BES516-325-G-E4-Y BES-516-329-G-E4-Y BES 516-356 BES-M12MD1-PSC60B-S04G BES516-329-G-E5-Y-S4 516-370-B0-C 516-370-G-E5-Y-S4 BES-M12MC1-PSC10F-S04G
Contextual Info: Inductive Sensors 1 1.19 Inductive Sensors DC 3-/4-Wire M12 sn 2 mm M12x1 flush 2 mm 0.1.6 mm M12×1 flush 2 mm 0.1.6 mm Normally-open 1 Normally-closed 2 Complementary 3 BES 516-325-B0-C BES 516-370-B0-C BES 516-325-S 4-C BES 516-370-S 4-C Normally-open 4

R04KC-POC15B-EV05

Abstract: R04KC-PSC15B-S49-00 Balluff BES R04K R04KC-POC15B-S49-00
Contextual Info: Miniblock R04 . mini size – maxi performance DC 3-Wire Quadraform Housings sn 1.5 mm 8x16×4 flush 1.5 mm 0.1.2 mm 8×16×4 flush 1.5 mm 0.1.2 mm Mini size – maxi performance PNP Normally-open Normally-closed BES R04KC-PSC15B-S49-00,13 BES R04KC-PSC15B-S26-00,2 BES R04KC-PSC15B-EV05

IEC 947-5-2

Abstract: EN60947-5-2
Contextual Info: BES M12MI-NSH80B- Inductive Sensors BES M12MI-NSH80Bcyl. M12 Sn = 8 mm DC 3-Wire quasi shielded Common Data Mounting in steel quasi shielded Rated operating distance Sn mm 8.0 Assured operating distance Sa mm 0.5,8 % <= 10 Repeatability Function indication

IEC 947-5-2

Abstract: EN60947-5-2 M12MI-PSH80B-S04G
Contextual Info: BES M12MI-PSH80B-S04G Inductive Sensors BES M12MI-PSH80B-S04G cyl. M12 Sn = 8 mm DC 3-Wire quasi shielded Common Data Mounting in steel quasi shielded Rated operating distance Sn mm 8.0 Assured operating distance Sa mm 0.5,8 % <= 10 Repeatability Function indication

BES-640P

Abstract: 640P
Contextual Info: BES-640P 400 Watt § § § 120 V DC input Temperature-controlled ball-bearing fan Powerful 25 A at 12 V The DC PC PSU BES-640P provides a 120 V DC input in order to supply computer systems for industrial applications or in mobile systems. Due to its wide input voltage range from 90 to 144 VDC this PSU remains

HgCdTe

Abstract: TWO COLOR DETECTOR BARNES ENGINEERING HGCDTE detector photoconductive InSb metal detector Barnes Engineering Company InSb spectral response IR Detectors A-600
Contextual Info: O CORP/ BARNES 45 ENGRG DE J 3 0 E T bES Bulletin A - 6 0 0 5 J ‘ T-41-41 Two-Color Infrared Sandwich Detector BARNES Series A -600 SPECIAL FEATURES TYPICAL APPLICATIONS • Thermal Imaging • Fast Response • Military Surveillance • Long Wavelength Respons

BES 516-324-S

Abstract: 516-324-S bes 516-324 Balluff BES I1A08AP2 EN60947-5-2
Contextual Info: Inductive Sensors BES 516-324-S 49-C M8x1 x 54.5 normally-open Sn=1,5mm shielded Common Data Mounting in steel Rated operating distance Sn Assured operating distance Sa Repeatability R Hysteresis Function indication Ambient temperature range Polution Degree

EN60947-5-2

Abstract: EN60947-5-2, M12x1 connector
Contextual Info: Inductive Sensors BES M12MI-PSC20B-S04G M12x1 x 65 normally-open Sn=2mm shielded Common Data Product name Mounting in steel Rated operating distance Sn Assured operating distance Sa Repeatability R Hysteresis Function indication Ambient temperature range Polution Degree

c100m

Abstract: MARKING CODE 56m
Contextual Info: SIEMENS BCP 54M . BCP 56M NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 51 M.BCP 53M PNP Q62702-C2595 BCP 55M BEs Q62702-C2606 BCP 56M

Contextual Info: SSM730P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating BVDSS 400V Repetitive-avalanche rated R DS ON 1.0Ω Fast switching ID 5.5A Simple drive requirement G D TO-220 S Description Power MOSFETs from Silicon Standard provide the designer with the bes

Balluff BES

Abstract: EN60947-5-2
Contextual Info: Inductive Sensors BES M08MG1-PSC60F-S49G cyl. M 8 Sn = 6 mm DC 3-Wire non-flush Common Data Mounting Rated operating distance Sn non-flush mm 6,0 Assured operating distance Sa mm 0.4,9 Repeatability % <= 5 Function indication Ambient temperature range yes

EN60947-5-2, M12x1 connector

Abstract: Balluff BES 516-325-S EN60947-5-2
Contextual Info: Inductive Sensors BES 516-325-S 4-C M12x1 x 70 normally-open Sn=2mm shielded Common Data Mounting in steel Rated operating distance Sn Assured operating distance Sa Repeatability R Hysteresis Function indication Ambient temperature range Polution Degree IEC-Code

lcd LVDS display 14 pin connector fujitsu

Abstract: 20 pin TFT fujitsu S5760 12APPEARANCE fujitsu display ccfl sanken
Contextual Info: 1 2 3 4 TENTATIVE A A B B FLC58UWC8V C C Specifications D DOCUMENT CONTROL SECTION D DATE E TITLE 02 20040705 S.Hayashimoto Change p3-6,8,17,18,30 EDIT DESCRIPTION DATE DESIG. CHECK APPR. DESIG. 20040604 S.Hayashimoto CHECK APPR. FLC58UWC8V Tech Bes LCD-00274

intel flash 28F800 topside mark

Abstract: intel DOC 28f800 errata flash device MARKing intel
Contextual Info: 28F800BV/CV/CE 28F008BV/BE SPECIFICATION UPDATE Release Date: January 1997 Order Number 297688-005 The 28F800BV/CV/CE and 28F008BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F800BV/CV/CE and 28F008BV/BEs’ behavior to

Contextual Info: Alle Rechle vorbehallen/ 411 rights reserred 3 2,5/, x2L= 60,96 r- - 09185505329 09185506329 09185507329 Bes t e 1 1 -N r. Par t -No. Reference 0,76 All Oiiensinns in • Original Size OIN A A Au 2 3 An f orderungss tuf e performence level Niveau de qual i te

Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient

3D21B

Abstract: 3D21WA 3d21b tube 3D21A 3D21WB 3D21B Tubes 3D21 000-microsecond rs tube tung-sol
Contextual Info: TUNG-SOL PRODUCT BULLETIN INDUSTRIAL ELECTRON TU BES TYPE 3D21WB SEPTEMBER 1964 P U LSE BEAM POWER TETR OD E DESCRIPTION — The 3D21W B is a rugged, reliable, beam power tetrode designed for pulse service. Featuring the ability to operate under high voltage and high pulse

Modutec BL series

Abstract: MIL-M-10304 ANSI C39.1 modutec MIL-M-16125 MIL-M-16034 MIL-W-19088 MIL-M-23167 analog wattmeter MOVING IRON PANEL METER
Contextual Info: Wo rld ’s Bes t Sel e c t i o n DECADES OF EXPERIENCE Leadership For The New Millennium Jewell Instruments ll e w e J In u str m ts n e For over 60 years, Jewell Instruments and our predecessor companies have provided high quality panel meter solutions for a wide range

6k11

Abstract: T1651 ET-T1651 12by general electric
Contextual Info: 6K11 ET-T1651 6K11 Page 1 12-60 THREE-SECTION TRIODE ^TU BES DESCRIPTION AND RATING The 6K11 is a COMPACTRON device containing two high-mu triodes and one medium-mu triode. Features of the tube includeseparate pin connections for all three cathodes, grids, and plates; an internal shield between sections 1

28F004

Abstract: 29759* intel
Contextual Info: 28F400BV/CV/CE 28F004BV/BE SPECIFICATION UPDATE Release Date: December 1996 Order Number: 297595-012 The 28F400BV/CV/CE and 28F004BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F400BV/CV/CE and 28F004BV/BEs’ behavior to

PE42451

Contextual Info: NEWS RELEASE Maj 2010 Besök Peregrine på IEEE-MTT IMS i monter 2914 25-27 maj 2010 – Anaheim, Kalifornien, USA Peregrines nya SP5T RF-switch ger hög isolation i infrastrukturtillämpningar UltraCMOS RF-kretsar ger >50 dB isolation, eliminerar konstruktioner med switchmatris

7641 prom

Abstract: intel 28F400 t443 TOP MARK 28F004 pa28f400bvt 512k x 8 chip block diagram INTEL flash part MARKING
Contextual Info: 28F400BV/CV/CE 28F004BV/BE SPECIFICATION UPDATE Release Date: February 1997 Order Number: 297595-013 The 28F400BV/CV/CE and 28F004BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F400BV/CV/CE and 28F004BV/BEs’ behavior to

PE33361

Abstract: PE33631
Contextual Info: NEWS RELEASE Maj 2010 Besök Peregrine på IEEE-MTT IMS i monter 2914 25-27 maj 2010 – Anaheim, Kalifornien, USA Peregrines senaste PLL-frekvenssyntetiserare erbjuder marknadsledande fasbrusprestanda Första UltraCMOS RF-kretsarna av europeiskt ursprung som ger -216 dBc/Hz/Hz med

Contextual Info: T e le c o m S ta n d a rd P r o d u c t r v l %#|. I I V 1^— PREUMNARY INFORMATION Pacific Microelectronics centre PM5301 SSTX SONET SECTION TERMINATING TRANSCEIVER FEATU BES • Monolithic SONET Section Terminating Transceiver for processing the section