BERYLLIUM COMPOUNDS Search Results
BERYLLIUM COMPOUNDS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LM5111-1MY/NOPB | Texas Instruments | Dual 5A Compound Gate Driver 8-MSOP-PowerPAD |
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| LM5111-2MY/NOPB | Texas Instruments | Dual 5A Compound Gate Driver 8-MSOP-PowerPAD |
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| LM5111-2MYX/NOPB | Texas Instruments | Dual 5A Compound Gate Driver 8-MSOP-PowerPAD |
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| LM5111-4M/NOPB | Texas Instruments | Dual 5A Compound Gate Driver 8-SOIC |
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| LM5111-4MY/NOPB | Texas Instruments | Dual 5A Compound Gate Driver 8-MSOP-PowerPAD |
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BERYLLIUM COMPOUNDS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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ECCOBOND 104
Abstract: MIL-A-46146 Hysol C9-4215 Hysol 4215 Emerson Cuming Catalyst 11 Stycast 2651 7224 markem Hysol Stycast 2651 Markem 7224 Ink rtv 174
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mil-dtl-389992651/catalyst2850ft/catalyst05-apr-2007+10 | |
4485-12-5
Abstract: CONDUCTIVE INK
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4485-12-5conductive ink | |
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Contextual Info: MATERIAL DECLARATION SHEET Material Number 85L CP Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A Subpart mass of total wt. (%) 72 Material Mass % of total unit wt. 3.920 25 1.361 5.455 7440-50-08 3 0.163 |
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titanium dioxide
Abstract: calcium grease
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titanium dioxidecalcium grease | |
fiber switchContextual Info: MATERIAL DECLARATION SHEET Material Number 86-L Cermet Dual Cup Product Line Panel Control Compliance Date September 30, 2005 RoHS Compliant Yes MSL N/A No. Construction Element (subpart) Homogeneous Material Material weight [g] 1 Rotor Driver Zinc 0.968 |
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fiber switch | |
material declaration amd
Abstract: HALON 2402 CFC-12 ASBESTOS lead selenide 13765 63936 7446 data sheet gruner magnesium hydroxide
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material declaration amdhalon 2402cfc-12asbestos+6 | |
ISO-11469
Abstract: manufacturing process calcium chloride Asbestos MSDS 79005 voltage regulator din6120 DIN-6120 Boric 94850 sulphuric acid 51 32844
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iso-11469manufacturing process calcium chlorideasbestos msds79005 voltage regulator+6 | |
tva0300n07
Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
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tva0300n07mmic amplifier marking code n10mtva0300n05pst-02-a-1+6 | |
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Contextual Info: Material Composition Survey and Response Manual December 15, 2006 Third Edition Data Format Ver. 3.21 compliant Japan Green Procurement Survey Standardization Initiative Revision History: January 6, 2006: First Edition – Newly created upon the introduction of the JIG |
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pb-r-10pb-r-15-22 | |
cyclohexene
Abstract: 82306 1010218 urea formaldehyde resin adhesive tetrabutyl tin zinc naphthenate hydroquinone manufacturing process calcium chloride p-chlorophenol pentaerythritol
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cyclohexene823061010218urea formaldehyde resin adhesive+6 | |
100v 23A P-Channel MOSFETContextual Info: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot |
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frf9150dfrf9150rfrf9150h-100v+5 | |
ta17741
Abstract: 2E12 FRS9140D FRS9140H FRS9140R
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frs9140dfrs9140rfrs9140h-100v+7 | |
MIL-S-19500
Abstract: mosfet 60a 200v 100v 23A P-Channel MOSFET FRF250R4 N-channel enhancement 200V 60A 1E14 2E12 JANSR2N7294
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jansr2n7294frf250r41000kmil-s-19500+5 | |
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Contextual Info: FRF250D, FRF250R, FRF250H 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 200V, RDS on = 0.115S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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frf250dfrf250rfrf250h115s1+6 | |
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MIL-S-19500
Abstract: 1E14 2E12 FRF150R4 JANSR2N7292
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jansr2n7292frf150r41000kmil-s-19500+2 | |
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Contextual Info: JANSR2N7292 HARRIS S E M I C O N D U C T O R Formerly Available As FRF150R4 Radiation Hardened, N-Channel Power MOSFETs Features Description . 25A, 100V, rDS 0 N = 0.070£2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both |
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jansr2n7292frf150r41000kmil-s-19500 | |
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Contextual Info: FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 500V, RDS on = 0.615Q. TO-254AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si) |
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frf450dfrf450rfrf450ho-254aa+6 | |
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Contextual Info: JANSR2N7292 Semiconductor Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both |
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jansr2n72921000ko-254aamil-s-19500 | |
Beryllium Compounds
Abstract: JIG-101 asbestos Enpirion EN5365QI EN5366QI SURVEY selenium material composition Information Enpirion en5366qi
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en5365qien5366qi10x12x158-pin+11 | |
JIG-101
Abstract: selenium EN5395 Beryllium Compounds Information Enpirion en5395qi Information Enpirion en5396qi
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en5395qien5396qi10x12x158-pin+9 | |
Asbestos MSDSContextual Info: SII GREEN PROCUREMENT STANDARDS Version 7 September 2012 Seiko Instruments Inc. S-G-3 Table of Contents Page PREFACE ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 1 |
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asbestos msds | |
FRS240R
Abstract: 1E14 2E12 FRS240D FRS240H
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frs240dfrs240rfrs240ho-257aa+7 | |
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Contextual Info: FRS9140D, FRS9140R, FRS9140H 11 A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.315Q. TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si) |
OCR Scan |
frs9140dfrs9140rfrs9140h-100v+5 | |
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Contextual Info: if^ S S FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255£i TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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frs240dfrs240rfrs240ho-257aa+6 | |