BDY58 Search Results

BDY58 Datasheets (20)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BDY58	Comset Semiconductors	NPN SILICON TRANSISTOR, DIFFUSED MESA	Original	PDF	154.65KB	3
BDY58	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=125 / Ic=25 / Hfe=20-60 / fT(Hz)=7M / Pwr(W)=175	Original	PDF	10.99KB	1
BDY58	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	163KB	1
BDY58	Unknown	Transistor Replacements	Scan	PDF	80.54KB	1
BDY58	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF	65.36KB	1
BDY58	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	118.2KB	1
BDY58	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	110.84KB	1
BDY58	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	86.67KB	1
BDY58	SGS-Thomson	Transistor Datasheet	Scan	PDF	164.31KB	4
BDY58	Solitron Devices	Pro Electron Power Transistors	Scan	PDF	214.79KB	2
BDY58	Thomson-CSF	Condensed Data Book 1977	Scan	PDF	43.86KB	1
BDY58	Thomson-CSF	Power Transistor Data Book 1975	Scan	PDF	165.74KB	7
BDY58	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF	133.26KB	1
BDY58A	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=125 / Ic=25 / Hfe=20-60 / fT(Hz)=7M / Pwr(W)=175	Original	PDF	10.98KB	1

BDY58B	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package	Original	PDF	11.8KB	1
BDY58C	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package	Original	PDF	11.8KB	1
BDY58R	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	138.64KB	1
BDY58R	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	143.81KB	1
BDY58R	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	110.84KB	1
BDY58S	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package	Original	PDF	10.97KB	1

BDY58 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BDY57 Abstract: BDY58 Contextual Info: Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING See Fig.2	Original	bdy57 bdy58 10mhz	PDF
BDY58 Abstract: BDY57 Contextual Info: SavantIC Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications PINNING See Fig.2	Original	bdy57 bdy58 10mhz	PDF
BDY58S Contextual Info: BDY58S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58s o204aa 31-jul-02	PDF
BDY58B Contextual Info: BDY58B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58b o204aa 31-jul-02	PDF
BDY58C Contextual Info: BDY58C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58c o204aa 31-jul-02	PDF
Transistor bdy 58 Abstract: Tektronix 7603 BDY58 emetteur Tektronix Contextual Info: NPN SILIC O N TR A N S IS TO R S , D IF F U S E D MESA DUT J / BDY58 TR A N S IS TO R S NPN S IL IC IU M , M ESA D IF F U S E S LF large signal power amplification A m p lific a tio n B F grands signaux de puissance 8 0 V \ 125 V V CEO High current fast switching	OCR Scan	bdy58 cb-19 transistor bdy 58 tektronix 7603 +2emetteur tektronix	PDF
Contextual Info: BDY58R Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	bdy58r freq48m eq48m	PDF
Contextual Info: BDY58A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58a o204aa 18-jun-02	PDF
Contextual Info: BDY58 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58 o204aa 16-jul-02	PDF
Contextual Info: BDY58B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)	Original	bdy58b	PDF
bdy58 Contextual Info: Æ T SGS-THOMSON Deæi[LIOro iDOi BDY58 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDY58 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case. It is intended for use in switching and linear applications in	OCR Scan	bdy58	PDF
Contextual Info: BDY58A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58a o204aa 16-jul-02	PDF
Contextual Info: BDY58S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58s o204aa 18-jun-02	PDF
Contextual Info: BDY58B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58b o204aa 18-jun-02	PDF

Contextual Info: BDY58A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)	Original	bdy58a	PDF
BDY77 Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55 Contextual Info: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74	OCR Scan	bdy45 20min ddy46 bdy54 +11bdy55 bdy56 bdy57 bdy58 bdy77 bfr99 bdy79 bdy58b bdy61 bdy71 bfq36	PDF
bdy58 Abstract: BDY57 Contextual Info: BDY57 – BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current	Original	bdy57 bdy58	PDF
BDY58 Abstract: BDY57 Comset Contextual Info: BDY57 – BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current	Original	bdy57 bdy58 comset	PDF
Contextual Info: BDY58 MECHANICAL DATA Dimensions in mm HIGH CURRENT NPN SILICON TRANSISTOR 4 0 .0 1 1 .5 7 5 M a x . FEATURES 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 2 .1 9 (0 .4 8 )	Original	bdy58 10mhz	PDF
Contextual Info: BDY58B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58b o204aa 16-jul-02	PDF
Contextual Info: BDY58C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58c o204aa 18-jun-02	PDF
bdy58s Contextual Info: BDY58S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	bdy58s o204aa 16-jul-02	PDF
Contextual Info: BDY58 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V)160 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	bdy58 freq10m	PDF
Contextual Info: BDY58C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)	Original	bdy58c	PDF

BDY58 Search Results

BDY58 Datasheets (20)

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