BDY 12 Search Results

ic TT 2222

Abstract: BDY 11 TT 2222 npn TT 2222 bdy 12 Spannungsregler bdy42
Contextual Info: W BDY 42 • BDY 43 • BDY 44 Silizium-NPN-Leistungstransistoren Silicon NPN Power Transistors A n w e ndungen: Spannungsregler, Inverter, getaktete Netzgeräte Applications: Voltage regulator, inverter, switching mode power supply Besondere M erkm ale: Features:

Contextual Info: ^3natron P R O -E L E C T R O N P O W E R T R A N S IS T O R S DEVICE POLARITY IC cont. vCEO MAX AMPS MAX VOLTS TYPE BD 130 NPN 15.0 60 BD 142 NPN 15.0 45 BDY 20 NPN 1S.0 60 BDY 29 NPN 30.0 75 BDY 37 NPN 140 16.0 BDY 38 NPN 6.0 40 BDY 39 NPN 15.0 60 BDY 55 NPN

BDY13

Abstract: Q62702-D378 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12
Contextual Info: 2SC D • ÔSBSbQS QQQHMBB T H S I E G NPN Silicon Planar Transistors SIEMENS AKTIENÛESELLSCHAF BDW 25 BDY 12 ° - BDY 13 433 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

E2B20

Abstract: Transistor bdy 11 BDY88 BDY87 TRANSISTOR D131 transistor 1005 oj SWITCHING TRANSISTOR 60V BDY89 D129 D131
Contextual Info: BDY 87, BDY 88, BDY 89 NPN Darlington stages for AF and switching applications BDY 87, BDY 88, and BDY 89 are hig h -p o w e red arid highly am plifying NPN o u tp u t stages for AF and s w itch in g applications. They consist of tw o single-diffused NPN transistor systems each in com pound connection in a case 9 A 4 DIN 41875 S O T-9

BDW 16.24K5000-C2-5

Contextual Info: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

bdy82

Abstract: BDY83
Contextual Info: BDY 82 BDY 83 PNP SILICON TRANSISTORS, EPITAXIAL BASE TR AN S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E Compì, of BDY 80, BDY 81 PRELIM INARY DATA N O T IC E P R E L IM IN A IR E • LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance

185t2

Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
Contextual Info: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2

bdy56

Abstract: amplificateur BF amplificateur BF TCA BDY 56
Contextual Info: * BDY 55 * BDY 56 NPN SILICON TRANSISTORS, DIFFUSED MESA TR A N S IS TO R S NPN S IL IC IU M , M ESA D IF F U S E S H* P referred device D is p o s itif recommandé • LF large signal power amplification Am plification B F grands signaux de puissance Commutation rapide fo rt courant

2N3442

Abstract: Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20
Contextual Info: * 2 I\I 3442 BDY 74 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E 2N 3442 compì, o f BDX 20 Preferred device D is p o s itif recommandé • LF large signal power amplificateur 140 V 2N 3442 2 0 V BDY 74 V -«

BDY79

Abstract: 594 BC BDY78
Contextual Info: * BDY 78 * BDY 79 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D I F F U S E S ^ Preferred device D isp ositif recommandé LF large signal power amplification A m p lific a tio n B F grands signaux de puissance

h21e

Abstract: BDY80 BDY82 max-h21E BDY81
Contextual Info: BDY 80 BDY 81 NPN S ILIC O N TR A N S IS TO R S , HOM O BASE TR AN S IS TO R S NPN S IL IC IU M , H O M O B ASE Compì, o f B D Y 82 - BD Y 83 - LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance /3 5 V 5 0 V • Switching

Contextual Info: REVISION B HDBNC-J-P-X-RA-BHX-BDY 2.94±0.02 +0.02 5.40 - 0.03 DO NOT SCALE FROM THIS PRINT 0.00 3.55 - 0.03 3.35±0.03 1.75±0.03 TYPE -P: PCB 3.75 0.10 SECTION "A"-"A" TERMINATION -BH1: BULKHEAD THROUGH HOLE .062 BOARD -BH2: BULKHEAD THROUGH HOLE .093 BOARD

Contextual Info: BDY 12 BDY13 Sta tisc h e Ken ndaten TQ = 25 °C Die Transistoren B D Y 12 und B D Y 13 werden bei /c = 1 A und UCE = 1 V nach der statischen Stromverstärkung gruppiert und mit Zahlen der DIN-R-5-Normenreihe gekenn­ zeichnet. Für folgende Arbeitspunkte gilt:

Contextual Info: MHF1-P-C-X-RA-CA3 REVISION A DO NOT SCALE FROM THIS PRINT DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -P: PLUG TYPE -C: CABLE TERMINATION -CA3: RG-081 CABLE ORIENTATION -RA: RIGHT ANGLE PLATING SPECIFICATIONS -H: HEAVY GOLD SEE NOTE 6 & 7 (MHF1-P-C-H-RA-CA3-BDY)

ESM750A

Abstract: ESM750 esm952a BUW38 ESM952 BUX40 BUX48
Contextual Info: o metal power transistors transistors de puissance métalliques THOMSON-CSF ç / 'B td + tr typ» max A (W) 1 (A) = 1,5V min I maxl •Caff* (V) * V CE Ul O > P to t O NPN ■c cont Ul v CEO VCEX* S Type (V) max (A) (A) (llS) switching transistors BDY 26(183

Contextual Info: REVISION F BNC7T-J-P-XX-ST-TH2D DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] DO NOT SCALE FROM THIS PRINT GENDER -J: JACK 10.92 .430 C TYPE -P: PCB 1.25 .049 2 PLCS 9.65 .380 REF PLATING SPECIFICATION -HN: HEAVY GOLD/NICKEL (SEE NOTES 6 & 7) (BNC7T-J-P-DN-ST-TH2-BDY-D)

Contextual Info: REVISION A BNC7T-J-P-XX-ST-TH1 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -J: JACK TYPE -P: PCB DO NOT SCALE FROM THIS PRINT 18.00 .709 REF 11.00 .433 REF 4.50 .177 REF E -GN: GOLD/NICKEL SEE NOTES 7 & 8 (BNC7T-J-P-N-ST-TH1-BDY) (BNC7T-J-P-ST-TH1-INS)

Contextual Info: * BDY 53 * B D Y 54 NPN SILIC O N TR A N S IS TO R S , D IFFU SED MESA TRANSISTORS NPN S ILIC IU M , MESA DIFFUSES Preferred device D isp o sitif recommandé - LF or H F large signal a m p lifica tio n Am plification BF ou H F grands signaux 60 V 120 V - High speed switching

BDY12

Abstract: BDY13 BDY12-10 BDY12-16 BDY12-6 BDY13-16 Q60204-Y13-D bcy13
Contextual Info: BDY 12, B D Y 13 NPN Transistors for AF output stages and switching applications B D Y 1 2 and B D Y 1 3 are epitaxial N P N silicon planar power transistors in a case 9 A 2 D IN 41 875 SO T-9 . The collector is electrically connected to the case. In order that the transistors may be mounted insulated from the chassis, 1 mica disc

3771

Abstract: 2N3771 3772-BDY emetteur 3772 2n3772 N3771 sbru BDY76 AL710
Contextual Info: *2 N 3771 *2 N 3772 * BDY 76 NPN SILICON TRANSISTORS, HOMOBASES T R A N S IS T O R S N P N S IL IC IU M , H O M O B A SE S Preferred device Dispositif recommandé • LF large signal power amplification 40 V 160 V (20 A \3 0 A 150 W VCEO Amplification B F grands signaux de puissance

Contextual Info: mininm. I I •2. 1 2 6 * . 0 0 4 o o o o o o o o T OP VIE W P/N 797674-2 SHOWN BO T T OM VIE W 2 -mrI Q P IG IM L DRAW [MG PI N SIGNAL 1 2 3 4 5 6 7 a 9 10 1 12 3 14 IS 16 17 GND D3 D4 OS 06 07 CEI AIO se Al 1 A9 A8 A 13 A M Wl BDY/0SY VCC 797674-1 PI N S I G N A L

Transistor bdy 58

Abstract: Tektronix 7603 BDY58 emetteur Tektronix
Contextual Info: NPN SILIC O N TR A N S IS TO R S , D IF F U S E D MESA DUT J / BDY58 TR A N S IS TO R S NPN S IL IC IU M , M ESA D IF F U S E S LF large signal power amplification A m p lific a tio n B F grands signaux de puissance 8 0 V \ 125 V V CEO High current fast switching

emetteur

Abstract: 2N3441 BDY72 3441 V560 2n 3441
Contextual Info: *2 I\I 3441 *B D Y 7 2 NPN òlLICON TRANSISTORS, HOMOBASES T R A N S IS TO R S N P N S IL IC IU M , HO M O B A SE S 2N 3441 compì, of BDX 16 ^ Preferred device D is p o s itif recommandé LF large signal power amplification 140 V (120 V 3A CEO Am plification B F grands signaux de puissance

BDY39

Abstract: Scans-0078762 B-30 B-31 solitron devices blx BLX83 BD 104 NPN 185BD BDY38
Contextual Info: - ^ o —— • _ _ SOLITROIM DEVICES INC [ ^ G W © ? © Ä 1T M TS dF | ä H b öb D S 0D D S7fib D | ^ T ’ J 3 ' û i . © 1