BDX 14 Search Results

BDX 625

Abstract: tip 120
Contextual Info: POWER TRANSTSTORS GENERAL [i}fini ilu Uu PURPOSE GENERAL PURPOSE DARLINGTONS T Y ?E ptot Tr=25°C W> NPN PNP 90 BDX 63/1 BDX 62/1 BDX 62 90 BDX 63 90 BDX 63A BDX 62A 90 BDX 63B BDX 62B 90 BDX 63C BDX 62C 117 BDX 65/1 BDX 64/1 BDX 64 117 BDX 65 117 BDX 65A BDX 64A

40872

Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

transistor 40410

Abstract: 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636 TA8201
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

Contextual Info: Data sheet. General accessories KLIPPON BDX M20 B Weidmüller Interface GmbH & Co. KG Klingenbergstraße 16 D-32758 Detmold Germany Fon: +49 5231 14-0 Fax: +49 5231 14-292083 www.weidmueller.com Pressure-compensation elements ensure good ventilation

Contextual Info: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO

40632

Abstract: 300W TRANSISTOR AUDIO AMPLIFIER npn 40872 40636 40872 transistor TA8326 120w audio power amplifier 2n3055 audio output circuit 2N5415 2N6320
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386

transistor 40409

Abstract: 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 2n2102 class ab audio amplifier circuit transistor 2n3055 40409 silicon 300W TRANSISTOR AUDIO AMPLIFIER 40361
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6.5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386

TRANSISTOR BDX

Abstract: TCA 875 BDX25 tca 271 tic 272 Bd 130 NPN transistor
Contextual Info: BDX25 NPN Silicon power transistor for high-quality AF output stages and switching applications BDX 25 is an epitaxial NPN silicon planar power transistor in the case 9 A 2 DIN 41 875 SOT-9 . The collector is electrically connected to the case. For insulated mounting

TRANSISTOR BDX

Abstract: pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B
Contextual Info: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO

BDX14

Abstract: BDX 14
Contextual Info: * BDX 14 PNP SILICON TRANSISTORS, EPITAXIAL BASE TR A N SIS TO R S PNP S IL IC IU M , BASE E P IT A X IE S Compì, of 2N 3054 ^P re ferred device D isp o sitif recommandé - LF large signal power amplification A m plification B F grands signaux de puissance

TRANSISTOR BDX 538

Abstract: bdx 540 TRANSISTOR BDX 14 bdx 538 BDX18 TRANSISTOR BDX 18n TRANSISTOR BDX 3055 5C pnp transistor TRANSISTOR BDX 536 transistor BDX 65
Contextual Info: BDX 18 BOX 18 l\l PNP SILICON TRANSISTORS, EPITAXIAL BASE TR AN SIS TO R S PNP S IL IC IU M , BASE E P IT A X IE E Compì, of 2N 3055 LF large signal power amplification Am plification B F grands signaux de puissance High current switching Commutation fo rt courant

BDX 71

Abstract: 3055C BD142 40251 C 5039 2N6354
Contextual Info: POWER TRANSISTORS TYPE a: <_ j o a. A 0 9 3 A >h; > > LU O < _u X CO ^E c E ÜJ IL cj ( 3) s> < _o > X <o o LT3 < _u E tz > II O H @ g Ili JZ CM PACKAGE Hometaxial for linear and switching applications O a Ü. BD 142 NPN 50 45 15 12/60 4 1.1 4 117 2N 3055/BDX 10

2N3442

Abstract: Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20
Contextual Info: * 2 I\I 3442 BDY 74 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E 2N 3442 compì, o f BDX 20 Preferred device D is p o s itif recommandé • LF large signal power amplificateur 140 V 2N 3442 2 0 V BDY 74 V -«

emetteur

Abstract: 2N3441 BDY72 3441 V560 2n 3441
Contextual Info: *2 I\I 3441 *B D Y 7 2 NPN òlLICON TRANSISTORS, HOMOBASES T R A N S IS TO R S N P N S IL IC IU M , HO M O B A SE S 2N 3441 compì, of BDX 16 ^ Preferred device D is p o s itif recommandé LF large signal power amplification 140 V (120 V 3A CEO Am plification B F grands signaux de puissance

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

bdx340

Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
Contextual Info: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8

bdx340

Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60

Contextual Info: THE INFDRMATIDN CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO DEL FUSE INC. AND SHALL NOT DE COPIED, REPRODUCED DR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF DEL FUSE INC. LEDI POLARITY PIN 13 PIN 14 COLOR + YELLOW PIN 15 - - ELECTRICAL CHARACTERISTICS RoHS

UL444

Abstract: NS100N AMP Netconnect AMP Netconnect 2000327
Contextual Info: 4 D R A W IN G IS U N P U B L IS H E D . R ELEASED FOR ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S REVISIONS RESERVED. EH C O R P O R A T IO N . 00 D E S C R IP T IO N ENHANCED CATEGDRY 5e PERFORMANCE CHARACTERISTICS

E138034

Abstract: bdx 540 bdx 538 UL444 NS100N BDX 71 0 261 230 134 bdx 545 BDX 58
Contextual Info: @ RELEÁáH IS UWPUBU5HBB. COPYRIGHT 19 BY AMP m P-UBUóÁTIÓkl- TFT LOC - ALL RIfiHTS RESERVED. INCORPORATED. DI5T REVISIONS EH CA T EG D RY 5e PERFORMANCE C H A R A C TE R IS TIC S FREQUENCY ATTENUATION MHz) D (dB/lOOn) MAXIMUM NEXT PSNEXT

EIA-359

Abstract: EIA-359-A AMP Netconnect NS100N
Contextual Info: 4 D R A W IN G IS U N P U B L IS H E D . R ELEASED FOR ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S R E V IS IO N S RESERVED. EH C O R P O R A T IO N . 00 D E S C R IP T IO N ENHANCED CATEGDRY 5e PERFDRMANCE CHARACTERISTICS

Bow94c

Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

tip 220

Abstract: BDW 65 C TIP 122 127 tip 130 TIP 122 tip 127 803 SGS B0680 BDX54S BDX53 SGS TO 220
Contextual Info: f Z J SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MOtíMIILIOTtMOtÉS POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS 30 A, VQEO : 45 — 180 V Epitaxial base - Ic m : 2 Internal schematic diagrams NPN and PNP types Medium V q e o range 45 to 180 V

UL444

Abstract: NS100N
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FOR P U B L IC A T IO N ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S 2 R IG H T S R E V IS IO N S RESERVED. EH C O R P O R A T IO N . 00 D E S C R IP T IO N CATEGERY 5e PERFORMANCE CHARACTERISTICS