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    BDV65B Search Results

    BDV65B Datasheets (28)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BDV65B
    Bourns NPN SILICON POWER DARLINGTONS Original PDF 86.98KB 5
    BDV65B
    Central Semiconductor Leaded Power Transistor Darlington Original PDF 65.99KB 1
    BDV65B
    Motorola Complementary Silicon Plastic Power Darlingtons Original PDF 111.5KB 6
    BDV65B
    ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DARL NPN 100V 10A TO-218 Original PDF 7
    BDV65B
    On Semiconductor Complementary Silicon Plastic Power Darlington Original PDF 44.1KB 4
    BDV65B
    On Semiconductor Complementary Silicon Plastic Power Darlingtons Original PDF 44.9KB 4
    BDV65B
    On Semiconductor Complementary Silicon Plastic Power Darlingtons Original PDF 114.93KB 4
    BDV65B
    Philips Semiconductors Silicon Darlington Power Transistors Original PDF 400.38KB 8
    BDV65B
    Power Innovations NPN SILICON POWER DARLINGTONS Original PDF 149.44KB 6
    BDV65B
    Mospec POWER TRANSISTORS(12A,125W) Scan PDF 174.22KB 4
    BDV65B
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 237.93KB 9
    BDV65B
    Motorola European Master Selection Guide 1986 Scan PDF 48.5KB 1
    BDV65B
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 55.27KB 1
    BDV65B
    Unknown Transistor Replacements Scan PDF 65.58KB 1
    BDV65B
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 134.67KB 1
    BDV65B
    Unknown Cross Reference Datasheet Scan PDF 39.51KB 1
    BDV65B
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 99.87KB 1
    BDV65B
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 82.37KB 1
    BDV65B
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 35.99KB 1
    BDV65B
    STMicroelectronics Shortform Data Book 1988 Short Form PDF 60.04KB 1
    SF Impression Pixel

    BDV65B Price and Stock

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    onsemi BDV65BG

    - Rail/Tube (Alt: BDV65BG)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BDV65BG Tube 981
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    Newark BDV65BG Bulk 1
    • 1 $3.12
    • 10 $2.73
    • 100 $2.28
    • 1000 $1.97
    • 10000 $1.65
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    Vyrian BDV65BG 9,639
    • 1 -
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    Philips Semiconductors BDV65B

    SILICON DARLINGTON POWER TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BDV65B 304
    • 1 $9.60
    • 10 $9.60
    • 100 $5.92
    • 1000 $5.28
    • 10000 $5.28
    Buy Now

    Bourns Inc BDV65B-S

    BNSBDV65BS (Alt: BDV65B-S)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus BDV65B-S 143 Weeks 9,000
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    BDV65B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BDV65

    Abstract: BDV65B BDV65A BDV65C BDV64 BDV64A BDV64B BDV64C
    Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


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    bdv65bdv65abdv65bbdv65c+5bdv64bdv64abdv64bbdv64cot-93 PDF

    BDV64B

    Abstract: BDV65B
    Contextual Info: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • w DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


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    bdv65bbdv64bbdv65b/d PDF

    BDV64B

    Abstract: BDV65B bdv64b transistor
    Contextual Info: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


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    bdv65bbdv64br14525bdv65b/d+1bdv64b transistor PDF

    BDV64B

    Abstract: bdv64 Bdv64a
    Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current


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    bdv64bdv64abdv64bbdv64c+5bdv65bdv65abdv65bbdv65cot-93 PDF

    Contextual Info: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.


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    bdv65bdv65bbb53t31003mflm PDF

    BDV64

    Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
    Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


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    bdv65bdv65abdv65bbdv65c+5bdv64bdv64abdv64bbdv64cot-93 PDF

    BDV65B

    Abstract: BDV65 bdv65a BDV64 BDV64A BDV64B BDV64C BDV65C
    Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● JUNE 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current


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    bdv65bdv65abdv65bbdv65c+5bdv64bdv64abdv64bbdv64cot-93 PDF

    BDV64B sgs-thomson

    Abstract: dv65a BDV64
    Contextual Info: BDV64/A/B BDV65/A/B SGS-THOMSON ILEO««! POWER DARLINGTONS DESCRIPTION The BDV65, BDV65A, BDV65B, are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are intended for use In power linear


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    bdv64/a/bbdv65/a/bbdv65bdv65a+7bdv65bot-93bdv64abdv64bbdv64bdv64b sgs-thomsondv65a PDF

    bdv64b

    Abstract: BDV64BG transistor packages sot93 BDV65B BDV65BG
    Contextual Info: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − HFE = 1000 (min.) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


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    bdv65bbdv64bbdv65b/dbdv64bg+2transistor packages sot93bdv65bg PDF

    BDV64

    Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
    Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


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    bdv64bdv64abdv64bbdv64c+5bdv65bdv65abdv65bbdv65cot-93 PDF

    Motorola Power Transistor Data Book

    Abstract: Motorola Bipolar Power Transistor Data MOTOROLA TRANSISTOR T2 03 transistor BDV65B bipolar transistor Motorola 801 TRansistor L 701 power transistors 638 POWER TRANSISTOR MOTOROLA
    Contextual Info: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc


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    bdv65b/dbdv65bbdv64bmotorola power transistor data book+8motorola bipolar power transistor datamotorola transistor t203 transistorbipolar transistormotorola 801transistor l 701power transistors638 power transistor motorola PDF

    TS-7P

    Abstract: T-33-Z bdv65
    Contextual Info: BDV65; 65A BDV65B; 65C SbE D PHILIPS INTERNATIONAL • 7110fl2b 0D433b0 3D1 H P H I N T'33-Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. PNP complements are BDV64, 64B and 64C.


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    bdv65bdv65b7110fl2b0d433b0+7bdv64ot-93bdv65j711dfl2bdd433bbts-7pt-33-z PDF

    MM1185

    Abstract: BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 T-33-Z dv65 BDV64 LP 7510 7Z82768
    Contextual Info: BDV65; 65A BDV65B; 65C PHILIPS INTERNATIONAL SbE D • 711DÛ2b 0D433L0 301 « P H I N T - 3 3 - Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio o utpu t stages and general am plifier and switching applications. PNP complements are B D V 64, 64B and 64C.


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    bdv65bdv65b0d433l0t-33-z+8bdv647z77501mm1185philips 1980bdv65, bdv64dv65lp 75107z82768 PDF

    BDV65

    Contextual Info: ¿57 7^537 ^ T rZ 3 ~ Z ° \ G02Ô435 b • S G S -T H O M S O N RfflDO^HLHOTT^QlMO ! BDV64/A/B BDV65/A/B S G S-THOMSON 3QE D POWER DARLINGTONS D ESC RIPTIO N The BDV65, BDV65A, BDV65B, are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic


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    bdv64/a/bbdv65/a/bbdv65bdv65a+5bdv65bot-93bdv64abdv64bbdv64 PDF

    BDV65B equivalent

    Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors


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    bdv65bbdv64btip73btip74+15tip74atip74btip75tip75atip75btip75cbdv65b equivalentbuv48 equivalentbu108tip127 pin details2sd424bdx54bu326bu100mje340 PDF

    tip142/TIP3055

    Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C
    Contextual Info: Pow er Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) @ lC @ V( je VCE(SA T) @ lc (MHz) (A) (V) (V) (A) h h FE BVCEO (V) *TYP NPN PNP BDV65 BDV64 12 BDV65A BDV64A 12 125 80 BDV65B BDV64B 12 125 BDW83A BDW84A


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    o-218bdv65bdv64bdv65a+8bdv64abdv65bbdv64bbdw83abdw84abdw83btip142/tip3055bdw83c PDF

    BDV65

    Abstract: bdv65b 8DV65C BOV65 BOV64A bdv65a
    Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power innovations Limited, UK • Designed or Complementary Use with BDV64, BOV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current •


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    bdv65bdv65abdv65bbdv65c+7bdv64bov64abdv64bbdv64cot-93bov658dv65c PDF

    BDV64B

    Abstract: BDV65B bdv64b transistor
    Contextual Info: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


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    bdv65bbdv64br14525bdv65b/d+1bdv64b transistor PDF

    BDV65, BDV64

    Abstract: BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC
    Contextual Info: MOTORCLA SC XSTRS /R F 12E D | b3b7254 D 00‘47bcl 7 | NPN BDV65 BDV65A BDV65B BDV6SC MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP BDV64 BDV64A BDV64B BDV64C DARLING TO N S 10 AM PERES COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS COMPLEMENTARY SILICON POWER TRANSISTORS


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    b3b7254t-33-tft-33-ubdv65+16bdv65abdv65bbdv64bdv64abdv64bbdv64cbdv65, bdv64bov65btransistor npn 3-326transistors bdv65cbov65bdv65b-bov64bbdv64b transistormotorola 3-326 transistortransistor bdv65c150ec PDF

    BDV65

    Abstract: BDV65B
    Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current


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    bdv65bdv65abdv65bbdv65c+5bdv64bdv64abdv64bbdv64cot-93 PDF

    Contextual Info: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


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    bdv65bbdv64b PDF

    bdy65

    Abstract: BDV65 BDV65B dv65 B 647 AC transistor BDV64 7Z82768
    Contextual Info: BDV65; 65A BDV65B; 65C SILICON DARLINGTON POWER TRANSISTORS N PN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. PNP complements are B D V 6 4, 64B and 64C. Q U IC K R E F E R E N C E D A T A


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    bdv65bdv65bbdv64ot-93+57z77s01bdy65dv65b 647 ac transistor7z82768 PDF

    BDV65B

    Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


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    bdv65bdv65abdv65bbdv65c+6bdv64bdv64abdv64bbdv64cot-93global/pdfs/tsp1203 PDF

    TIS140

    Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE


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    bdv64bdv64abdv64bbdv64c+6bdv65bdv65abdv65bbdv65cot-93tis140 PDF