BD64 Search Results

Darlington NPN Silicon Diode

Abstract: BD643 BD644 IE-02
Contextual Info: Inchange Semiconductor Product Specification BD643 Silicon NPN Dalington Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD644 ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment ,general amplifier,and analogue switching applications

BD649

Abstract: BD647 TL 2262 BD64S 00m0
Contextual Info: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers

bd648

Abstract: bd652
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

Contextual Info: BD640CT~BD6200CT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT TO-251AB 6.0 Amperes Unit : inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O .264(6.7) .248(6.3) • For surface mounted applications

D 1991 AR

Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
Contextual Info: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0

50t65

Abstract: bd650 BD644
Contextual Info: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.

Contextual Info: 3 4 DRAWING TH IS MADE DRAWING IN 15 THIRD ANGLE UNPUBLISHED COPYRIGHT RELEASED 19 2 PROJECTION BY ANP FOR PUBLICATION I N CORPORAT ED. ALL INTERNATIONAL RIGHTS D I ST LOC 19 BD RESERVED. R E V I 5 I ON' 48 ZONE DESCRIP TIO N LTR D APPD 9-18-89 PER ECN BD6498

UL54V-0

Contextual Info: , UNPLBL ISHED REV 8 RDWN ECN BD3365 8 BD3478 REV PER ECN BD3 B4 3 _ REV PER ECN B D 43 1 9_ REV PER ECN BD49EQ_ 0B5-3,5U PER5EDED-2 PER ECN BD6410 REV PER EC 0 Q 2 0 - 1 0 5 3 - 9 5 _ REV PER EC 0420-59-96_

D 1991 AR

Abstract: BD644 transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645
Contextual Info: J BD644; 646; 648 ^B P 6 5 0 ; 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T0-220 envelope and intended for applications such as audio output stages, switching, and general amplifiers.

bd64550

Abstract: BD64550EFV
Contextual Info: 1/4 STRUCTURE Silicon monolithic integrated circuits PRODUCT SERIES 1chip motor driver for printer H bridge driver 2ch, switching regulator, series regulator, reset output TYPE BD64550EFV FUNCTION ・Built-in thermal shut down circuit ・Built-in UVLO circuit

bd640

Abstract: BD680CT BD640CT BD6150 BD660 BD6200 BD690
Contextual Info: BD640CT~BD6200CT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT TO-251AB 6.0 Amperes Unit : inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O .264(6.7) .248(6.3) • For surface mounted applications

B0643

Abstract: d 17275 BD649C
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

BD647

Abstract: BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD650 BD652
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature

BD646

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and

bd640

Abstract: BD640CS
Contextual Info: BD640CS~BD6200CS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief

BD649

Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

Contextual Info: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.

Contextual Info: BD649F Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.750

bd643f

Contextual Info: BD643F; 645F; 647F BD649F; 651F y SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistorsinaSOT186 envelope with an electrically insulated mounting base. PNP complements are BD644F, BD646F, BD648F, BD650F and BD652F. QUICK R E F E R E N C E D A T A

BD649

Abstract: BD647 BD645 BD651 IC 651 PC 649
Contextual Info: SavantIC Semiconductor Product Specification BD645/647/649/651 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature

transistor bd650

Abstract: BD648 BD646 BD652 BD644 BD650 IC 651
Contextual Info: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.

bd640

Abstract: BD6100CS
Contextual Info: BD640CS~BD6200CS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief