bd442
Abstract: BD440
Contextual Info: BD440 BD442 PNP power transistors Features • PNP transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain
|
Original
|
bd440bd442bd439bd441+1ot-32
|
PDF
|
transistor bd442
Abstract: 0016114E BD440 BD441 BD442 JESD97 PNP POWER TRANSISTOR SOT-32
Contextual Info: BD442 PNP power transistor Features • PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain
|
Original
|
bd442bd441ot-32transistor bd442+40016114ebd440jesd97pnp power transistor sot-32
|
PDF
|
BD438 equivalent
Abstract: bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic BD438 356SR BD442
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 P lastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS P N P SILICON CASE 77-08 TO-225AA TYPE
|
OCR Scan
|
bd437bd441bd438bd440+10bd442o-225aabd438 equivalentbd679 pnp transistorbd878bd437 equivalentbd442 equivalentcase 77-08bd676 circuit schematic356sr
|
PDF
|
2SA1046
Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
|
Original
|
bd437bd441bd438bd440+16bd442tip73btip74tip74atip74btip752sa1046bd4192sc1943bd4202bd4202sc20712sc12372sa939bd1332sc1903
|
PDF
|
BU108
Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
|
Original
|
bd438bd442bd437bd441+15tip73btip74tip74atip74btip75tip75abu1082sc7rca1c03to-126 high speed switching transistorbdx542sc19432sc1419bu326bu100
|
PDF
|
BD439
Abstract: st bd441 BD441 BD442 JESD97 BD441 an
Contextual Info: BD441 NPN power transistor Features • NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance
|
Original
|
bd441bd442ot-32bd439+3st bd441jesd97bd441 an
|
PDF
|
st bd441
Abstract: bd439 BD441 0016114E BD440 BD442 JESD97
Contextual Info: BD439 BD441 NPN power transistors Features • . NPN transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain
|
Original
|
bd439bd441bd440bd442+4ot-32st bd4410016114ejesd97
|
PDF
|
MJ3001 equivalent
Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc
|
Original
|
mj29552n3055mj2955a2n3055a+15mj2500mj2501mj3000mj3001tip73btip74mj3001 equivalentmj3000 equivalent2sc1096 equivalentbu108mj3000 circuitmj2955 2n3055 200 watts amplifierbdx54mj2955 replacement2n3055 replacement
|
PDF
|
motorola MJ15001
Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —
|
Original
|
mj15001mj15002tip73btip74+13tip74atip74btip75tip75amotorola mj15001bu108equivalent to tip162bdx54d45h11 equivalent replacement2sd217bu326bu100replacement bd139
|
PDF
|
TIP142 TRANSISTOR REPLACEMENT
Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V
|
Original
|
tip140tip145tip141tip146+16tip142tip147tip73btip74tip74atip74btip142 transistor replacementreplacement for tip147high end amplifier schematics 2n3055pin configuration npn transistor tip41cbdw51c schematicstip142 tip147bd262 darlington2n6022bu108transistor tip142
|
PDF
|
2SC105
Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
|
Original
|
2n49182n49192n49202n4921+162n4923tip73btip74tip74atip74btip752sc1052sd718 amplifier2n4923 motorolabd139 equivalent transistor2sa10462sc1629 equivalentbd139 complementst bdw83c2sc108bu326a equivalent
|
PDF
|
All similar transistor 2sa715
Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc
|
Original
|
bd243bbd244bbd243cbd244c+10tip73btip74all similar transistor 2sa7152n3055bu108transistor bc 1532sa1046bu326bu100transistor cross reference
|
PDF
|
BU108
Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:
|
Original
|
bux41tip73btip74tip74a+11tip74btip75tip75atip75btip75c2n6488bu1082sc1629 equivalentbdx54bu326bu100
|
PDF
|
2SA1046
Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
|
Original
|
bux85tip73btip74tip74a+11tip74btip75tip75atip75btip75c2sa1046380 darlington to3 ibmreplacement bd139bu326bu108bu100
|
PDF
|
|
|
BU108
Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —
|
Original
|
mje2361tmje2360ttip73btip74+10tip74atip74btip75tip75atip75bbu108tip105 darlington transistorbdx54bu326bu100
|
PDF
|
MJ15023 EQUIVALENT
Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —
|
Original
|
mj15023mj15025tip73btip74+11tip74atip74btip75tip75amj15023 equivalentmj15024 mj15025bu1082sc19432sc1419bu326bu100
|
PDF
|
mje15033 replacement
Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver
|
Original
|
2n30552n65762n65772n6578+15tip73btip74tip74atip74btip75mje15033 replacementbd262 darlington2sb554 replacement2sc1079 replacement2sd3232n6254 replacementbd262a darlingtonmj2955 replacement2sc1013 replacement2n3055 replacement
|
PDF
|
Circuit details of BD237 equivalent
Abstract: BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
bd237tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488circuit details of bd237 equivalentbd237-10bd237 similarbu108bd237 equivalent2sc7bd237 pin assignment2sd4242sc495bux98a
|
PDF
|
bd135 TRANSISTOR REPLACEMENT GUIDE
Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc
|
Original
|
bd135bd137bd139tip73b+16tip74tip74atip74btip75tip75atip75bbd135 transistor replacement guidetransistor bd 458transistor bc 562n5981 pnp transistorbd135-bd137-bd139bd139 pin databu108transistor bd 325bd139-25mje13005 complementary
|
PDF
|
2SA1046
Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated
|
Original
|
2n64972n6498tip73btip74+10tip74atip74b2sa1046bu108bu326bu100bd2622sb688 y2n5632bd876
|
PDF
|
MJE3055 to247
Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix
|
Original
|
mjd2955mjd3055mje2955mje3055+16tip73btip74tip74atip74btip75tip75amje3055 to247motorola transistors mje3055 to 127mje3055 equivalentst t4 3580motorola transistors mje2955bu108transistor mje3055 motorolamje3055 to 126bu326bu100
|
PDF
|
IC 3526
Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc
|
Original
|
bd802tip73btip74tip74a+15tip74btip75tip75atip75btip75cic 3526transistor mj15024tip3055 equivalentrca1c13bu1082n6277 applicationsmj3247bdx54motorola mj30002n3791 equivalent
|
PDF
|
BU108
Abstract: MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —
|
Original
|
mj15022mj15024tip73btip74+13tip74atip74btip75tip75abu108mj15024 motorola transistor2n3055 transistor mj15022bdx54mj15024 mj15025buv11 equivalentapplication notes mj15024bu326bu100
|
PDF
|
2N4922
Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A
|
Original
|
buv23tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882n4922bu1082sb655bd390mj110212sb557bdx542n6107 motorola2sc1943mje2482
|
PDF
|
