BD131 BD132 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS BD131 NPN power transistor 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A

BD131

Abstract: BD132 bd132 equivalent BD132A
Contextual Info: PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO Ratings Collector-Emitter Voltage

7430 ic data sheet

Abstract: BD131 2108 npn transistor bd131 equivalent BD132 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A

BD132

Abstract: bd132 equivalent BD131
Contextual Info: SavantIC Semiconductor Product Specification BD132 Silicon PNP Power Transistors DESCRIPTION •Complement to type BD131 ·With TO-126 package ·High current Max:- 3A ·Low voltage (Max: -45V) APPLICATIONS ·For general purpose power applications PINNING

BD131

Abstract: BD132 2A 50V NPN
Contextual Info: SavantIC Semiconductor Product Specification BD131 Silicon NPN Power Transistors DESCRIPTION •Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING PIN

bd131 equivalent

Abstract: BD131 EQUIVALENT IC bd131 BD132
Contextual Info: Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors • DESCRIPTION ·Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING

BD131

Abstract: bd131 bd132 BD132 bd131 equivalent
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS NPN PNP BD131 BD132 EC TO-126 Plastic Package B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage

MAR 733

Abstract: BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor

bd132

Abstract: transistor ALG 20
Contextual Info: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter

BD131

Abstract: BD132 bd131 bd132
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON EPITAXIAL POWER TRANSISTORS NPN PNP BD131 BD132 EC TO-126 Plastic Package B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS NPN PNP BD131 BD132 EC TO-126 Plastic Package B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage

Contextual Info: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter

BD131

Abstract: BD132 bd131 bd132
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN/PNP SILICON EPITAXIAL POWER TRANSISTORS BD131 NPN BD132 PNP TO-126 General Purpose, Medium Power Applications.

BD131

Abstract: BD131A V4020
Contextual Info: BD131 J v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic package fo r general purpose, m edium pow er applications. P-N-P com plem ent is BD132. QUICK REFERENCE D ATA Collector-base voltage open e m itte r

transistor h44

Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
Contextual Info: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)

d1694

Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
Contextual Info: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base

BD132

Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Contextual Info: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.

TV RADIO IC free

Abstract: bf194 BD124 BF195 BD116 BF180 BFW87 BF196 BD133 BF197
Contextual Info: 54 T ran sisto rs Continued Electronic Valves Z & I Aero Services Ltd London England 1972-73 ^JapìiX Notes T03 15W 30m c 1t +80 T03 45W 95m cl2i +60 55<2 2A 1A BD123 BD124 S/NPN S/NPN T03 MD17 45W 15W 85m c<2) 60m cm +90 +70 55<2) 60‘2’ 1A 0 .5A BD131

BD132

Abstract: FE21
Contextual Info: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P tran sisto r in a SOT-32 plastic package fo r general purpose, m edium power applications. N-P-N com plem ent is BD131. Q U IC K R EFE R E N C E D A T A “ v CBO max. 45 V C o lle c to r-e m itte r voltage open base

BD131

Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
Contextual Info: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.

bd131

Abstract: BD132
Contextual Info: Philips Semiconductors Product specification PNP power transistor BD132 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 45 V). emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose power applications.

transistor c 458

Abstract: BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor
Contextual Info: DISCRETE SEMICONDUCTORS BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors

to126

Abstract: TO-126 BD825-10 BD826-10 BD137-10 BD825 bd138-16 BD826 BD136 BD139-16
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN GENERAL PURPOSE POWER TRANSISTORS VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) TO-126 45 3000 15000 40 >40 60 BD135 TO-126 45 1500 8000

bd826

Abstract: BD828-10 BD136-16 BD138-16 BD140-16 BD825-10 to126 philips power transistor bd139 BD140 philips BD138-10
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE POWER TRANSISTORS VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) TO-126 45 3000 15000 40 >40 60 BD136 TO-126 45 1500 8000