BD BF Search Results

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

J165

Abstract: BD167 bf 169 BD 166, 168, 170
Contextual Info: BD 165 BD 167 BD 169 NPN SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SIL IC IU M NPN, BASE EPITAXIES Compì. BD 166, BD 168, BD 170 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­

IC 74 series

Abstract: 74 Series IC BM 72 A BDF52
Contextual Info: SE R IE S INDEX ! : . : ; ! : BA-10x1 UD Series BA-12x3UD Series BA-2x2UW Series BA-5x5UD Series BA-8x6UW Series BA-9x4AD Series BA-9x4CD Series BB-Bxx74 Series BB-Bxx74-A Series BD-A51xxx Series BD-A53xxx Series BD-A54xxx Series BD-C51xxx Series BD-C53xxx Series

bd 241a transistor

Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
Contextual Info: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.

BC 677

Abstract: Tfk 680 BD675 bc 681 BD677 BD681 BD 677 BD 681 2DIN125A 2mA80
Contextual Info: V BD 675 • BD 677 • BD 679 •BD 681 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Sehr hohe Stromverstärkung Features: • Very high current transfer ratio

transistor bd 126

Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

bb 36 931

Abstract: BB36931 ba741 BH 37 933 ba 37 931 BH37931 BB36-931 BD37933 BH 36 933 BB39931
Contextual Info: moulded bridges o ponts moulés THOMSON-CSF Vr = Types 15A 141 8 A ,1 BY BA BB BD BF BH 26 26 26 26 26 26 933 933 933 933 933 933 BY 38 BA 38 BB 38 BD 38 BF 38 BH 38 10A‘1» BY BA BB BD BF BH 36 36 36 36 36 36 933 933 933 933 933 933 15A 1> 931 931 931

LT 238

Abstract: BD 238 BD234
Contextual Info: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­

800TD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.

FPT-48P-M19

Abstract: FPT-48P-M20 2 PIN DIODE MARKED BD BD75
Contextual Info: MBM29PL160TD/BD-75/90 Data Sheet Retired Product MBM29PL160TD/BD -75/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

FPT-48P-M19

Abstract: FPT-48P-M20 12PW 38
Contextual Info: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-3E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD/BD-75/90 • DESCRIPTION The MBM29PL160TD/BD is a 16 M-bit, 3.0 V-only Flash memory organized as 2 M bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (1), and 44-pin SOP packages. The

TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

CHN 749

Abstract: CHN 647 CHN 648 CHN 649 CHN 948 B0647 CHN 025 F799 li 1766 chn 64
Contextual Info: 74C{},|,3/ >;861 >?.?2 =28.D /IGS7;0 3IFUVSIT \ \ \ \ \ \ \ \ \ Gcf_ Ni@ F799:>7 DQD68667667?9< :666V ^c_f_]nlc] mnl_hanb Pbini cmif[ncih Cocfn3ch mho\\_l Z_li ]limm il l[h^ig nolh3ih TRJBD BD ionjon P[h_f giohn ED il BD ]ihnlif Wcnb LFE ch^c][nil il hin Fhpclihg_hn[f jlin_]ncih jli^o]n [p[cf[\f_

Contextual Info: _ 6 Rev APPROVED: - Description AWO# - Date 9/08/10 RELEASED Appr TITLE: DATE:_ .050 [1 .2 7 ] ft f t ft f t B 4B D I 2 b b 13 b b f t b f i - Q ft f t Î A f t ~ 4 D D D D D B bD bB bD bB Bfl I , .050 [1 .2 7 ] t ft f t ft b b b b b .016 [0 .4 0 ] SQ

chn 537

Abstract: chn 638 CHN 536 chn 538 chn 53 b CHN 65 CHN 647 e8 gg 65vl BD 761
Contextual Info: \[]{},|,3/ =:761 =>.>2 <27.B 3GDRSPGQ X 9555V ^c_f_]nlc] mnl_hanb X Pbini cmif[ncih X Cocfn2ch mho\\_l Gcf_ Ni? F6889=6 X TRJBD BD ionjon X P[h_f giohn X ED il BD ]ihnlif DQD57556556>8; X Wcnb LFE ch^c][nil il hin 4292<.7 12=0<6;>6:9 Tb_ KHX26:5:GC i``_l 8287VED il >527=5VBD chjon ]ihnlif1qcnb

145442

Abstract: MC145441
Contextual Info: , 14 MOTOROM ~C. E~OPW SE~COmUCTOR DMSION . SYSTEM ENGINEE~NG COMMU~CATI@#@ 300 BD MODEM , . Wepmed by: Bemad DUGE~IL September 86 1.:, , ,.\ .“ . . . . . . —— . MOTDRO~ EUROPEAN SEMICONDUCTOR DIVISION Q .* MC 145442 MOTOROM EURDPEAN SEMtCON’SUC .d

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

Contextual Info: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.

PTH59F

Abstract: PTH9M04BH471 PTH9M04BF471 PTH9C22BB471Q-T PTH9M04BE471 NTC 222 PTH9M04 PTH9M04BB471 PTC NTC SENSORS PTH5SF04BH471
Contextual Info: SENSORS PTC THERMISTORS POSISTOR FOR TEMPERATURE SENSORS NTC THERMISTORS FOR TEMPERATURE SENSORS 5R TEMPERATURE SENSOR;- H ERMI STO IPTH9C22 Series Part Number Curie Point (1C) PTH9C22AR471Q-T AR(120) PTH9C22BB471Q-T BB(100) PTH9C22BD471 Q-T BD(80) Resistance Value

NTH4G39A1

Abstract: PTH8L PTh9c32 NTH5G1M PTH9MO4BH471 bh 8550 posistor 16 PTH8 J04TE NTH4G
Contextual Info: WILLOW Technologies Sensors Thermistors - temperature sensing PTH9C32 Series PTC Order Code Curie Point °C Resistance Value (Ω)(at 25°C) Temp. (°C) (at 4.7k Ω) AR(120) BB(100) BD(80) 470±50% 135±10 115±10 95±10 PTH9C32AR471Q-T PTH9C32BB471Q-T