BD 5817 Search Results

Contextual Info: NCP2820 Series 2.65 W Filterless Class-D Audio Power Amplifier http://onsemi.com MARKING DIAGRAMS 1 9−PIN FLIP−CHIP CSP FC SUFFIX CASE 499AL C1 xx A Y WW G • • • • • • • • • • • = AQ for NCP2820 = BD for NCP2820A = Assembly Location

Contextual Info: NCP2820 Series 2.65 W Filterless Class-D Audio Power Amplifier http://onsemi.com MARKING DIAGRAMS 1 9−PIN FLIP−CHIP CSP FC SUFFIX CASE 499AL C1 xx A Y WW G • • • • • • • • • • • • = AQ for NCP2820 = BD for NCP2820A = Assembly Location

433T

Abstract: u413 3D2J
Contextual Info: 31;~} ;854/ ;<,<0 :0,5,@ 1EBQROEP Z IfX[ mfckX^\ 7;S@B kf 773S@B/ cfX[ Zlii\ek 5@ Z C`\c\Zki`Z jki\e^k_ 7333S Z DJB g\i]fidXeZ\ d\\kj BD i\hl`i\d\ek Z ClXc `e0c`e\ MBA gXZbX^\ Z OfGP Zfdgc`Xek 479=< ,QX ? 58 2070:,5 ,QX ? 58 - Heglk mfckX^\ iXe^\ Jljk Lg\iXk\ SfckX^\

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Contextual Info: NCV73810V2GEVB NCV7381 FlexRay Bus Driver Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Introduction allows users immediately start with the NCV7381 FlexRay Bus Driver. The MCU is preprogrammed with a firmware which provides simple mode control and FlexRay

BD136

Abstract: BD136G BD136 pin BD140 pnp transistor BD140 application circuits circuits bd136 N BD138G
Contextual Info: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features

Contextual Info: MMFT2N25E Product Preview High Energy Power FET N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery

Contextual Info: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage

SMMJT350T1G

Abstract: marking code E3 sot223 306 marking code transistor
Contextual Info: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −

MMJT

Contextual Info: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS

Contextual Info: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

4030p

Abstract: NJV4030PT1G
Contextual Info: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −

NSV40301

Contextual Info: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

Contextual Info: NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

Contextual Info: NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −

4031N

Abstract: NJV4031NT1G NJV4031NT3G
Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc

4030p

Contextual Info: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −

Contextual Info: NSS40300MZ4, NSV40300MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

Contextual Info: NSS40300MZ4, NSV40300MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed