BD 241 Search Results

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

Contextual Info: / BD 241 • BD 2 41A ■ BD 2 41B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD<241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

T0-220B

Abstract: pj30 241B BD241 BD241A BD241B 241a
Contextual Info: NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD -241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241, BD 241A AND BD 241B ARE COMPLEMENTARY TO

241A

Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c
Contextual Info: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

bd5460

Abstract: B0243 BD250 B0245A B0246 B0544 BD239 BD245C BD545B BD239A
Contextual Info: T e x a s In s t r u m e n t s 2-6A Up to 65W T O -6 6 Plastic Packages Characteristics Tcase = 2 5 'C M a x Ratings at Tease = 2 b - C >» Device Type BD239 BD 239A BD239B BD 239C BD240 B0240A BD 240B BD 240C B D 24 1 BD 241A BD241B BD 241C BD242 BD 242A

BDX 241

Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

transistor bd 202

Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
Contextual Info: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

BD 242 transistors

Contextual Info: BD 242 • BD 242 A • BD 242 B FNP SILICON EPITAXIAL BASE POWER TRANSISTORS "% ""m m ' w W . CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,

BD242B

Abstract: 241B BD242 BD242A BOX69477 BD 242 transistors
Contextual Info: BD 242 • BD 242 A ■ BD 242 B PNP SILICON EPITAXIAL BASE POWER TRANSISTORS -Cf- *$ # 5 “ < V?.,. 4 & - 1 zj: ' 4 ! ì sf* 3 g, ’ " CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT

BO 241 A

Abstract: bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410
Contextual Info: BD 241, BD 241 A BD 241B. BD 241C NPN SILICON TRANSISTORS, EP ITAXIAL BASE TRANSISTORS NPN SILICIUM. BASE EPITAXIEE Compf. of BO 242, A, B, C P R ELIM INARY DATA NOTICE PRELIMINAIRE - Complementary symetry stages amplifiers /4 5 V I 60 V 180 V *1 0 0 V 3 A

ET 8211

Abstract: SCHEMA BD242C LI 20 AB bd242
Contextual Info: BD 242, BD 242A BD 242 B, BD 242 C PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS PNP SILIC IU M , BASE E P ITAXIEE Compì, of BO 241, A ,B ,C PRELIM INARY DATA NOTICE P R E LIM IN A IR E • Complementary symetry stages amplifiers 45 V I -6 0 V i —80 V

bd 241a transistor

Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
Contextual Info: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A

D242B

Abstract: 3120c BD240C BD242 BD242A BD242B T0-22OB 8700bo
Contextual Info: b U Z4Z • D U ^ M " DU PÏÏP SILICON EPITAXIAL BASE POWER TRANSISTORS I ; m ic r o e l e c t r o n i c s CASE T0-22OB THE BD 24 2 , BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,

Contextual Info: N AflER P H IL IP S / D IS C R E T E - ^ 5 3 ^ 3 1 2SE D O D l^ S A 1 • BD 241; BD 241A B D 241B ; BD 241C T - 23-// S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier

BD242A

Contextual Info: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Em itter V oltage : BD242 Rating Unit - 45 V : BD242A - 60

BD242C

Abstract: BD242 BD242A BD242B bd242 TRANSISTOR
Contextual Info: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Em itter Voltage : BD242 Rating Unit - 45 V : BD242A - 60

MPC823

Abstract: MPC823 user manual
Contextual Info: SECTION 24 TERMINOLOGY ACRONYMS, MNEMONICS, AND UNITS OF MEASURE MOTOROLA MPC823 USER’S MANUAL 24 TERMINOLOGY µs—Microsecond APG—Access Protection Group ASID—Address Space ID BD—Buffer Descriptor BRG—Baud Rate Generator CCITT—International Telegraph and Telephone Consultative Committee

5bd1

Contextual Info: Extract from the online catalog FMC 1,5/ 4-ST-3,5 BD:1,3,5,7Q Order No.: 1967799 Product notes WEEE/RoHS-compliant since: 03/14/2003 Commercial data GTIN EAN 4017918943554 Note

Contextual Info: Extract from the online catalog FMC 1,5/ 4-ST-3,5 BD:1,3,5,7Q Order No.: 1967799 Product notes WEEE/RoHS-compliant since: 03/14/2003 Commercial data EAN 4017918943554 Pack 50 pcs.

Contextual Info: Extract from the online catalog FMC 1,5/ 4-ST-3,5 BD:1-4Q Order No.: 1972823 Product notes WEEE/RoHS-compliant since: 09/01/2003 Commercial data EAN 4017918944155 Pack 50 pcs.

Contextual Info: Extract from the online catalog FMC 1,5/ 4-ST-3,5 BD:1-4Q Order No.: 1972823 Product notes WEEE/RoHS-compliant since: 09/01/2003 Commercial data GTIN EAN 4017918944155 sales group

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS