BD 236 Search Results

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

bd 551

Abstract: BD-E401RD BD-E311RD BD-E312RD BD-E313RD BD-E314RD BD-E315RD BD-E315RE BD-E316RD BD-E31DRD
Contextual Info: Part No. Digit Size 0.30" Dual-Digit 0.36" Dual-Digit 0.39" Dual-Digit 0.40" Dual-Digit 0.40" Dual-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BD-E311RD BD-E315RD BD-E315RE BD-E312RD BD-E313RD BD-F311RD BD-F315RD BD-F315RE BD-F312RD BD-F313RD

BD-E401RD

Abstract: BD-E311RD BD-E312RD BD-E313RD BD-E314RD BD-E315RD BD-E315RE BD-E316RD BD-E31DRD BD-E321RD
Contextual Info: SINCE 1981 Part No. Digit Size 0.30" Dual-Digit 0.36" Dual-Digit 0.39" Dual-Digit 0.40" Dual-Digit 0.40" Dual-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BD-E311RD BD-E315RD BD-E315RE BD-E312RD BD-E313RD BD-F311RD BD-F315RD BD-F315RE BD-F312RD

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

amplificateur

Abstract: vertical tv deflexion BD233 bo236 BD NPN transistors bd 233 bd 237
Contextual Info: NPN SILICON TRANSISTORS, E P IT A X IA L BASE BD 233 TRANSISTORS SILICIUM NPN, BASE EPITAXIEE gg 2 .3 5 BD 237 Compl. o f BD 234, BO 236, BD 238 P R E LIM IN A R Y D A T A NOTICE PRELIMINAIRE These transistors are intended fo r complemen­ ta ry or quasi complementary sym etry amplifiers :

BD 440 PNP transistors

Abstract: BD PNP BD438 BD442 BD 438 b0438 b0440 BD440 BD - 100 V bd441
Contextual Info: BD 438 - BD 440 - BD 442 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: Features: • Hohe Spitzenleistung • Verlustleistung 36 W

BD237

Abstract: BD 235 BD233 SD235 BD235 BD 100 V BD 237 to 126 leistungstransistoren 32-DIN BD NPN transistors
Contextual Info: BD 233 * BD 235 - BD 237 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Audio-Treiber- und Endstufen Applications: Audio driver and output stages Besondere Merkmale: • Hohe Spitzenleistung Features: • High peak power

BD441

Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439
Contextual Info: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power

BD NPN transistors 177

Abstract: IC 74157 BD 2418 BD179 BD175 BD177 bd 175 236 TFK BD176 din 125a
Contextual Info: BD 175 • BD 177 • BD 179 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anw endungen: Audio-Verstärker, -Treiber und -Endstufen Applications: Allgemein im NF-Bereich Audio amplifier, driver and output stages General in AF-range

IC 74157

Abstract: to 126 leistungstransistoren BD 176 BD176 BD180 BD178 "BO 180" B0180 TFK F BD 175 TFK G BD 175
Contextual Info: ► BD 176 • BD 178 • BD 180 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Audio-Verstärker, -Treiber und -Endstufen Allgemein im NF-Bereich Applications: Audio amplifier, driver and output stages General in AF-range

transistor bd 126

Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

LT 238

Abstract: BD 238 BD234
Contextual Info: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­

800TD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

TO126

Abstract: CDIL BD238 BD233 BD234 BD238 BD235 BD236 BD237 bd 238 P BD238 continental
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS BD 233, 235, 237 BD 234, 236, 238 TO126 Plastic Package EC B Medium Power Liner and Switching Applications

Contextual Info: MF SERIES PRECISION METAL FILM RESISTORS BD Standard EIA Color Code LD Î ! r BL LL DIMENSIONS Style Body Mil Style MF 1/6 RN-50 MF1/4 RN-55 MF1/2 RN-60 mm inch 1r BD 3 2 r 0.2 (126) (008) 6.0 r 0.2 ( 236) ( 008) 9.0 ±0.4 (.354) ( 016) 1.9 ±0.1 (.075) (.004)

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

Contextual Info: GP SERIES GENERAL PURPOSE METAL FILM RESISTORS rrm\ Standard EIA C olor Code BD LD Î t LL " BL DIMENSION mm inch *1 LL GENERAL SPECIFICATIONS Lead Wire Resistance Range BL BD LL LD Style Power Rating (70°C) Max. Working Voltage Max. Over Load Voltage T.C.R.

Contextual Info: CF SERIES FIXED CARBON FILM RESISTORS Standard EIA Color Code BD LD III! LL DIMENSION m m inch Body Lead Wire BD LL LD Style 3 2 ± 0 2 1.9 + 0.1 (.075) (.004) 29 ±1.0 (1.142) (.039) 0.45 ±0.05 (.018) (.002) Power Rating (70“C) Max. Working Voltage Max. Over

TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

BD 139 N

Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50