BD 149 Search Results

Contextual Info: SPL-34-GB-BD-xDFM SPL-43-GB-BD-xDFM Features z Date rate 1.25Gbps z Up to 40km transmission on SMF z 1310nm DFB transmitter and 1490nm PIN receiver for SPL-34-GB-BD-xDFM z 1490nm DFB transmitter and 1310nm PIN receiver for SPL-43-GB-BD-xDFM z Digital diagnostic monitor interface compliant with

alc860

Abstract: ALC860 schematics rqa200n03 rqa130n03 hy5ps561621afp-25 OZ128TN AF-15 P71EN0 OZ813 rtl8111b
Contextual Info: 5 4 3 2 1 S50IAx REV:D P/N LIST S50IAx Schematics Rev:D PAGE PCB P/N CONTENT PCB ASSY P/N S40II M/B 37GS50000-D0 S40/S50 TOUCH PAD BD S50IA M/B HYNIX 37GS50000-D0 82GS50000-D0 43. S40 MODEM BD S50IA M/B(SAM) 37GS50000-D0 82GS50000-? 44. S50 MODEM WITH USB BD

BD 149 transistor

Contextual Info: Dual Digit LED Displays BD-A/C, BD-E/F Series 7-segment AMERICAN BRIGHT 148 w w w. a m e r i c a n b r i g h t l e d . c o m 714 257-0800 FAX (714) 257-1310 • 2000 American Bright Optoelectronics Corporation. Specifications subject to change without notice.

DFB 1570

Abstract: 10g DFB SPPL-OR SP-03-IR1 SPC-03-XLR SPG-DR APD 1550 nm SP-GB-ZX SPP-10E-LR-CDFB bd 9080
Contextual Info: SFP Tri-rate SX I-tem Transceiver SFP Tri-rate SX C-tem Transceiver SFP 622M 15km C-tem Transceiver Single Fiber EFM SFP Products www.sourcephotonics.com Data Rate mb/s SFP SPL-35-FE-BX SPL-53-FE-BX SPL-35-FE-EBX SPL-53-FE-EBX SPL-35-FE-BD SPL-53-FE-BD SPL-45-FE-BZ

NT5TU32M16DG

Abstract: Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667
Contextual Info: NT5TU128M4CE / NT5TU64M8CE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -25D/-25DI -25C/-25CI -BD -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6 5-5-5 7-7-7 6-6-6 tCK Avg. 266 333 400 400

149t

Contextual Info: DRAWING MADE THIS IN T H IR D ANGLE P R O JE C T IO N DRAWING IS UNPUBLISHED. C O P Y R IG H T 19 RELEASED BY AMP FOR LOC PUBLICATION IN C O R P O R A T E D . ALL IN T E R N A T IO N A L R IG H T S BD RESERVED . D IS T REVISIONS 35 D E S C R IP T IO N REDRAWN AND REV PER ECN BD 4 1 S 3

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS BD High Ripple, Long Life Series Long Life High reliability withstanding 12000 hours load life at 105 C For power supply and adapter Complied to the RoHS directive Item Characteristics Operating temperature range

bosa

Abstract: PIN-TIA LC BOSA RL-50 1490nm
Contextual Info: 1310nm Emitting , 1490nm Receiving PIN-TIA, 3.3V , Bi-directional Diplexer Optical Module C-13/14-F06-BD-SXXL-XX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with trans-impedance amplifier

Diplexer Schematic

Abstract: bosa bosa application note bosa 1310nm BOSA 5 pin LC BOSA PIN Photodiode RL-50 diode c14 st 1490nm
Contextual Info: 1490nm Emitting DFB , 1310nm Receiving (PIN-TIA, 3.3V), Bi-directional Diplexer Optical Module C-14/13-D06-BD-SXXL-XX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with trans-impedance amplifier

Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

CQA006

Abstract: Spectrol, pot Spectrol
Contextual Info: Number: PCN 148/149 02/07/04 VISHAY VISHAY Process Change Notification 199, Bd de la Madeleine Page: 1 of 1 NICE 06003 France Date: July. 06, 2004 Device Types Concerned: Panel Potentiometers: 148 and 149 VISHAY SPECTROL Descriptions of Changes: 148/149 product origin transfer notification. New manufacturing location. Lead free product

NT5TU32M16DG

Abstract: NT5TU32M16 Nanya NT5TU32M16DG RU 3C
Contextual Info: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

P1019-BD

Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

XP1019-BD

Abstract: P1019-BD
Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD October 2008 - Rev 10-Oct-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

m430 f

Abstract: Vd100 piconics Resistor m430 S21ANG HOW TO SOLDER PICONICS VIREO usb mp3 module circuit diagram CMM0015-BD CMM0015-BD-000V DM6030HK
Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0015-BD September 2009 - Rev 22-Sep-09 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier September 2009 - Rev 22-Sep-09 CMM0015-BD Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

nt5tu32m16dg

Abstract: NT5TU32M16DG-AC Nanya NT5TU32M16DG NT5TU32M16DG-BE NT5TU64M8DE NT5TU32M16DG-ACI NT5TU32M16DG-3C NT5TU64M8 NT5TU32M16DG AC NT5TU32M16DG-BD
Contextual Info: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

P1019-BD

Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

NT5TU128M8DE

Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
Contextual Info: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6

samxon

Abstract: samxon 105 BD337
Contextual Info: BD Series High Tem perature g;S^ for +125°C FEATURES 1. Wide operating temperature range, it as long load life product at 125°C. 2. Suitable for use in DC or pulse circuits in various electronic and industrial. SPECIFICATIONS Item Perform ance C haracteristics

ts333

Contextual Info: 21.0-24.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1010-BD May 2007 - Rev 02-May-07 Features Excellent Linear Output Amplifier Stage 19.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept OIP3

NT5TU128M8GE

Contextual Info: NT5TU128M8GE / NT5TU64M16GG 1Gb DDR2 SDRAM Feature CAS Latency Frequency Speed Bins -3C/3CI -AC/ACI/ACL -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

NT5TU64M16GG

Abstract: NT5TU64M16GG-AC NT5TU128M8GE
Contextual Info: NT5TU128M8GE / NT5TU64M16GG 1Gb DDR2 SDRAM Feature CAS Latency Frequency Speed Bins -3C/3CI -AC/ACI/ACL -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

Contextual Info: NT5TU128M8GE / NT5TU64M16GG 1Gb DDR2 SDRAM Feature CAS Latency Frequency Speed Bins -3C/3CI -AC/ACI/ACL -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency