BD 139 N Search Results

BD 139 N

Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to

tfk 135

Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135
Contextual Info: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W

Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137

Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80

BD139

Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
Contextual Info: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data

bo 139

Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing

BD139 MOTOROLA

Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135
Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc

tfk 138

Abstract: tfk 136 tfk 140 BD 140 tfk 135 3 TFK 140 BD 139 140 72050 tfk bd 138 BD136
Contextual Info: BD 136 • BD 138 • BD 140 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Besondere Merkmale: • Verlustleistung 8 W Features: • Power dissipation 8 W

TRANSISTOR BD 136

Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140
Contextual Info: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS

BD 139 N

Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50

transistor BD 141

Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram
Contextual Info: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features

TESLA KU 602

Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
Contextual Info: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

Contextual Info: CGB7017-SC -BD Advanced Product Information January 2005 V1.0 (1 of 7) Features ❏ Low Operating Voltage: 5V ❏ 33.8 dBm Output IP3 @ 850 MHz ❏ 3.3 dB Noise Figure @ 850 MHz ❏ 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz ❏ 18.2 dBm P1dB @ 850 MHz ❏ Low Performance Variation Over Temperature

Contextual Info: CGB7014-SC -BD Advanced Product Information June 2004 V1.0 (1 of 7) Features ❏ 18.5 dB Gain @ 6 GHz ❏ 24.5 dB Gain @ 850 MHz ❏ 36.0 dBm Output IP3 @ 850 MHz ❏ 3.5 dB Noise Figure @ 850 MHz ❏ 20.3 dBm P1dB @ 850 MHz ❏ Low Performance Variation Over Temperature

mmic C5 sot 86

Abstract: CGB7017-BD CGB7017-SC CGB7017-SC-0G00 CGB7017-SC-0G0T CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 sc 6700
Contextual Info: DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7017-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 33.8 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz

mmic C4 sot 89

Abstract: CGB7014-SC CGB7014-BD CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000
Contextual Info: DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7014-SC -BD Features Functional Block Diagram (SOT-89) 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz

BD NPN transistors 177

Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42
Contextual Info: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15

BD 139 transistor

Abstract: BD 140 transistor bd 3055 transistor BD 140 transistor bd 242 BD139-6 TRANSISTOR Bd 137 transistor BD 249 transistor BD 139 BD140
Contextual Info: BD140 PNP E P IT A X IA L - P L A N A R - S IL IC O N - T R A N S IS T O R • • • • • • • Driver for Audio Amplifier Active Convergenz Regulators Power Switching Ptot = 6.5 W at T q * 60 °C hpE > 40 at lc = 150 mA VcE sat < 0-5 V at lc = 0.5 A

transistor BD 246

Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
Contextual Info: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A

transistor bd 139

Abstract: transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 240 transistor BD 246 BD 139 140 TRANSISTOR BD 137 transistor BD245
Contextual Info: BD138 PNP E P IT A X IA L P L A N A R S IL IC O N TR A N S IS TO R 1 1 7 1 D ESIGN ED FO R CO M PLEM EN TARY USE WITH BD137

bd 139 smd

Abstract: CHA-3688 CHA3688AQDG CHA3688a-QDG AN0017 MO-220
Contextual Info: CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. UMS A3667A A3688A YYWWG The circuit is manufactured with a standard

BDX 241

Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Contextual Info: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A

CGB7014-BD

Abstract: CGB7014-SC CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000
Contextual Info: DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 18-Sep-06 CGB7014-SC -BD Features Functional Block Diagram (SOT-89) 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz