8D139
Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
Contextual Info: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126
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fl23sbqs135/bd137/bdbd135+11b0137b0139bd137bd139bd1368d139transistor bd 137transistor bd 378transistor bd 137-10transistor a110d106-v2
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BD 139 N
Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to
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023sfc0qq4332q62702-d106q62702-d106-v1+8q62702-d106-v2q62702-d106-v3q621758fl23sb05q00m33bbd 139 ntransistor bd 141bd139
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SDT 9202
Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A
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bd136o-126o-220sdt 9202 |
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transistor bd 126
Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available
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din41869din125a15a3dintransistor bd 126+9transistor bd 139transistor bd 135bd139transistor bc 137transistor bd 137bd 139 nbd 106 transistortransistor bc 136transistor bd 711
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BD139 N
Abstract: BD 139 BD139 NPN BD140 BD135 BD136
Contextual Info: S C S -T H O M S O N M im [iEgTO *S BD135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers
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bd135bd137/bd139ot-32bd136+7bd138bd140bd137bd139bd139 nbd 139bd139 npn
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tfk 135
Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135
Contextual Info: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W
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erlegscheibe32dn125atfk 135bd139 tfk+8bd 139 140bd 139 ntfk bd 137 jbd 139tfk bd139tfk 136bd139bd 135
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transistor BD 378
Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
Contextual Info: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.
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bd136bd138bd140ot-32+4transistor bd 378bd140 pnp transistortransistors bd136bd136 n
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pin configuration transistor bd140
Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139
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bd136bd138bd140bd140-10+16tip73btip74tip74atip74btip75tip75apin configuration transistor bd1402sd669 equivalentbuv44bd140 equivalent transistormje15020bd140 equivalentbd250c equivalentrca1222n6045 npn power darlingtontransistor bd 136
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bd 135
Abstract: Scans-007431 bo 135 h21e bd 135 h21e bd 138
Contextual Info: BD 135 BD137 NPN S IL IC O N TR A N S IS TO R S , P LA N A R TRANSISTORS NPN SILIC IU M , PLAN A R Com pì, of BD 136, BD 138 P R E L IM IN A R Y D A T A N O T IC E PR E L I M IN A IR E These transistors are intended fo r a wide variety o f medium power complementary symetry appli
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135/bd137/bd300fisbd 135+5scans-007431bo 135h21e bd 135h21ebd 138
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transistor bd 126
Abstract: bd 136 BD 138 bo 135 hi-fi bd bf AMPLIFICATEUR BD136
Contextual Info: B D 136 B D 138 PNP SILICON TRANSISTORS, PLANAR T R A N S IS T O R S P N P S IL IC IU M , P L A N A R Compì, of BD 135, 6D 137 PRELIM INARY DATA N O T IC E P R E L I M IN A I R E These transistors are intended for a wide variety of medium power complementary symetry appli
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135/bd137/bddeh31e136oubd+9300/istransistor bd 126bd 136bd 138bo 135hi-fibd bfamplificateurbd136
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transistor BD 139
Abstract: transistor BD 137 BD 139 transistor 10 watt power transistor bd transistor BD 135 bd139 BD transistor BD 139 BD 135 BD135
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary o r quasi com plementary circuits. • • DC Current Gain — hpE = 40 Min @ l c = 0.15 Adc
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bd135bd137bd139transistor bd 139+7transistor bd 137bd 139 transistor10 watt power transistor bdtransistor bd 135bd transistorbd 139bd 135
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BDI35
Abstract: BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139
Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpE = 40 Min @ Iq = 0.15 Adc
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bd135/dbd135bd137bd139+10o-225aabdi35bdi37lb 137 transistortransistor bd 139transistor bd139 nbd 139 ntransistor bd 140bd 135bd 139 transistor
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BD139 MOTOROLA
Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135
Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc
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bd135/dbd139 motorolabd139 h parametersbd139+7transistor bd135bd135 transistorbd 139 transistoru/25/20/tn26/15/850/power transistor bd135bd137 parametersbd139 pin outbd135
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tfk 138
Abstract: tfk 136 tfk 140 BD 140 tfk 135 3 TFK 140 BD 139 140 72050 tfk bd 138 BD136
Contextual Info: BD 136 • BD 138 • BD 140 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Besondere Merkmale: • Verlustleistung 8 W Features: • Power dissipation 8 W
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tfk 138tfk 136tfk 140bd 140+6tfk 1353 tfk 140bd 139 14072050tfk bd 138bd136
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bo 139
Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing
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l3b72s40gflm703bd135bd137+12bd139225aabo 139bd 1382 semiconductorbo 137bd 266 sbd 139 nbd 317bd139.6tr bd 139bd139 npnbd 139 140
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TRANSISTOR BD 136
Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140
Contextual Info: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS
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bd135/dr14525transistor bd 136bd137 parameters+8bd139bd139 h parameterspower transistor bd139transistor bd139bd135bd137bd139 circuitsbd 139 & 140
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Bow94c
Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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bdx53bow94cmje 131bd 147+7tip 220sgs mosfetsgsd93gb0333b0680bow93bbdw 34 a
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BD140 application circuits circuits
Abstract: transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138
Contextual Info: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc
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bd136/dbd140 application circuits circuitstransistor bd136transistor bd140+7bd140bd140-10bd140 pin outtransistor bd 140bd136motorola transistorbd138
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ba 1
Abstract: PTC thermistor 4.7k Transistors bc 558 ptc Ba
Contextual Info: THERMISTOR PRODUCTS PTC THERMISTOR CHIP TYPE FOR TEMPERATURE SENSING PTH9C Series The PTH9C Series is used for temperature sensing. Typical applications include overheat protection of power transistors, power diodes and power IC’s. FEATURES • Steep resistance characteristics near the
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pth9c32pth9c32bb471q-tpth9c32bc471q-tpth9c32bd471q-t+7pth9c32be471q-tpth9c16tcg01-iba 1ptc thermistor 4.7ktransistors bc 558ptc ba
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bc 540
Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0
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bc1611bcy58bcy59bd1361+13bd436bc432bc547bc 540transistor bc 137transistor bc 187transistor bc 540transistor bc 136bc 207 npnbc 677bsv57btransistor bd 187bd 139 n
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BD139 PIN DIAGRAM
Abstract: BD135 PIN DIAGRAM to225aa BD137G BD139 BD139G pin diagram of bd139 bd139 140 TRANSISTOR bd 330 BD137
Contextual Info: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available
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bd135bd137bd139bd139 pin diagram+7bd135 pin diagramto225aabd137gbd139gpin diagram of bd139bd139 140transistor bd 330
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10 watt power transistor bd
Abstract: transistor BD 140 transistor BD 136 bd140 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 BD140-10 P lastic Medium Power Silicon PNP Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpg = 40 Min @ l c = 0.15 Adc
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bd136bd138bd140bd140-10+910 watt power transistor bdtransistor bd 140transistor bd 136transistor bd 138bd 140 transistortransistor bd 139bd 140transistor bd 135motorola bd140
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pth9c32ar471q-t
Abstract: PTC thermistor 4.7k PTH9C32 PTH9C PTH9C32BB471Q-T ptc Ni 1000 ptc Ba PTH9C32BB471Q PTH9C32BD471Q-T bc 471
Contextual Info: THERMISTOR PRODUCTS PTC THERMISTOR CHIP TYPE FOR TEMPERATURE SENSING PTH9C Series The PTH9C Series is used for temperature sensing. Typical applications include overheat protection of power transistors, power diodes and power IC’s. FEATURES • Steep resistance characteristics near the
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pth9c16pth9c32pth9c32bb471q-tpth9c32bc471q-t+10pth9c32bd471q-tpth9c32be471q-tcg01-jpth9c32ar471q-tptc thermistor 4.7kpth9cptc ni 1000ptc bapth9c32bb471qbc 471
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transistor BD 141
Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram
Contextual Info: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features
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bd135bd137bd139transistor bd 141+6bd139gbd139 140bd139-25bd139 npn transistoroperation of bd 139bd135 diagram
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