BD 135 Search Results

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

8D139

Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
Contextual Info: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126

BD 139 N

Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

transistor BD 141

Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126

transistor BD 378

Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
Contextual Info: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.

transistor bd 126

Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

BD139 N

Abstract: BD 139 BD139 NPN BD140 BD135 BD136
Contextual Info: S C S -T H O M S O N M im [iEgTO *S BD135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers

tfk 138

Abstract: tfk 136 tfk 140 BD 140 tfk 135 3 TFK 140 BD 139 140 72050 tfk bd 138 BD136
Contextual Info: BD 136 • BD 138 • BD 140 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Besondere Merkmale: • Verlustleistung 8 W Features: • Power dissipation 8 W

Contextual Info: MOTO!ROILA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA M M BD 110T1 M M BD 330T1 M M BD 770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

tfk 135

Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135
Contextual Info: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W

alc860

Abstract: ALC860 schematics rqa200n03 rqa130n03 hy5ps561621afp-25 OZ128TN AF-15 P71EN0 OZ813 rtl8111b
Contextual Info: 5 4 3 2 1 S50IAx REV:D P/N LIST S50IAx Schematics Rev:D PAGE PCB P/N CONTENT PCB ASSY P/N S40II M/B 37GS50000-D0 S40/S50 TOUCH PAD BD S50IA M/B HYNIX 37GS50000-D0 82GS50000-D0 43. S40 MODEM BD S50IA M/B(SAM) 37GS50000-D0 82GS50000-? 44. S50 MODEM WITH USB BD

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

Contextual Info: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Fine Pitch Surface-Mount Connectors Board-to-Board Stacking 0.5mm, 0.6mm, 0.8mm, 1mm, 1.25mm, 1.5mm Fine Pitch, SurfaceMount, Stacking Bd-to-Bd Connectors

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Contextual Info: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Fine Pitch Surface-Mount Connectors Board-to-Board Stacking 0.5mm, 0.6mm, 0.8mm, 1mm, 1.25mm, 1.5mm Fine Pitch, SurfaceMount, Stacking Bd-to-Bd Connectors

Contextual Info: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Fine Pitch Surface-Mount Connectors Board-to-Board Stacking 0.5mm, 0.6mm, 0.8mm, 1mm, 1.25mm, 1.5mm Fine Pitch, SurfaceMount, Stacking Bd-to-Bd Connectors

800TD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.

FPT-48P-M19

Abstract: FPT-48P-M20 2 PIN DIODE MARKED BD BD75
Contextual Info: MBM29PL160TD/BD-75/90 Data Sheet Retired Product MBM29PL160TD/BD -75/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

FPT-48P-M19

Abstract: FPT-48P-M20 12PW 38
Contextual Info: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications