BD - 100 V Search Results

485-BD

Abstract: FX2N-485-BD d8203 FX-485PC-IF M8038 M1140 M8162 M1131 FX2n FX2N-485BD
Contextual Info: USER'S MANUAL FX2N-485-BD COMMUNICATION BOARD USER'S MANUAL FX2N-485-BD COMMUNICATION BOARD HEAD OFFICE: HIMEJI WORKS: JY992D66201A MEE 9706 MITSUBISHI DENKI BLDG MARUNOUCHI TOKYO 100 TELEX: J24532 CABLE MELCO TOKYO 840, CHIYODA CHO, HIMEJI, JAPAN Effective JUN. 1997

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

Contextual Info: 12.0-16.0 GHz GaAs MMIC Power Amplifier P1043-BD May 2008 - Rev 05-May-08 Features 32 dBm Saturated RF Power 41 dBm Output IP3 Linearity 17 dB Gain Control On-Chip Power Detector 100% RF Testing General Description The XP1043-BD is a linear power amplifier that operates

Contextual Info: 5.9-9.5 GHz GaAs MMIC Linear Power Amplifier P1035-BD April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point OIP3 Integrated Power Detector 100% On-Wafer RF Testing General Description The XP1035-BD is a linear power amplifier that

Contextual Info: 13.0-16.5 GHz GaAs MMIC Power Amplifier P1033-BD December 2007 - Rev 12-Dec-07 Features 15 dB Small Signal Gain 25 dBm P1dB Compression Point 35 dBm Output IP3 Linearity 100% On-Wafer RF Testing General Description The XP1033-BD is a driver amplifier that operates over

28MPA0304

Abstract: DM6030HK TS3332LD XP1023-BD XP1023-BD-000V XP1023-BD-EV1 P1023-BD p1023b 1000-2200pF mimix power amplifier
Contextual Info: 24.0-34.0 GHz GaAs MMIC Power Amplifier P1023-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

M1006

Abstract: 18KWR0327 DM6030HK TS3332LD XM1006-BD XM1006-BD-000V XM1006-BD-EV1 M1006b
Contextual Info: 13.0-25.0 GHz GaAs MMIC Image Reject Mixer M1006-BD February 2007 - Rev 26-Feb-07 Features Fundamental Image Reject Mixer GaAs HBT Technology 7.0 dB Conversion Loss 20.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 32.0-42.0 GHz GaAs MMIC Image Reject Mixer M1003-BD February 2008 - Rev 06-Feb-08 Features Sub-harmonic Image Reject Mixer GaAs HBT Technology 9.0 dB Conversion Loss 18.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

XM1003-BD

Contextual Info: 32.0-42.0 GHz GaAs MMIC Image Reject Mixer M1003-BD February 2008 - Rev 06-Feb-08 Features Sub-harmonic Image Reject Mixer GaAs HBT Technology 9.0 dB Conversion Loss 18.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010

P1021

Abstract: 18MPA0567 DM6030HK TS3332LD XP1021-BD XP1021-BD-000V XP1021-BD-EV1
Contextual Info: 17.0-22.0 GHz GaAs MMIC Power Amplifier P1021-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

XP1023-BD

Abstract: 28MPA0304 DM6030HK TS3332LD XP1023-BD-000V XP1023-BD-EV1
Contextual Info: 24.0-34.0 GHz GaAs MMIC Power Amplifier P1023-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

6OSC0460

Abstract: DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1
Contextual Info: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

OC 74 germanium transistor

Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

tanaka TS3332LD epoxy

Contextual Info: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

D1005

Abstract: 22DSBA0423 DM6030HK TS3332LD XD1005-BD XD1005-BD-000V XD1005-BD-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

P1025-BD

Abstract: 30MPA0562 DM6030HK TS3332LD XP1025-BD XP1025-BD-000V ka-band bare
Contextual Info: 28.0-31.0 GHz GaAs MMIC Power Amplifier P1025-BD March 2007 - Rev 05-Mar-07 Features Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

XP1018-BD

Abstract: DM6030HK TS3332LD XP1018 XP1018-BD-000X XP1018-BD-EV1 XU1004
Contextual Info: 37.0-42.0 GHz GaAs MMIC Power Amplifier P1018-BD February 2007 - Rev 01-Feb-07 Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

M1004-BD

Abstract: 26BAM0545 DM6030HK TS3332LD XM1004-BD XM1004-BD-000V XM1004-BD-EV1
Contextual Info: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883

IC 7486

Abstract: Ic chip 7486 7486 ic diagram DIAGRAM OF IC 7486 Q1004-BD 8OSC0464 DM6030HK TS3332LD XQ1004 XQ1004-BD
Contextual Info: 7.4-8.6 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1004-BD Features On-Chip Resonator +5.0 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Q1002-BD

Abstract: 7OSC0462 DM6030HK TS3332LD XQ1002-BD XQ1002-BD-000V XQ1002-BD-EV1
Contextual Info: 6.4-7.4 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1002-BD Features On-Chip Resonator +5.0 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

XQ1001-BD

Abstract: XQ1001-BD-000V XQ1001-BD-EV1 6OSC0461 DM6030HK TS3332LD tanaka epoxy
Contextual Info: 5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1001-BD Features On-Chip Resonator +5.0 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

7OSC0463

Abstract: DM6030HK TS3332LD XQ1003 XQ1003-BD XQ1003-BD-000V XQ1003-BD-EV1
Contextual Info: 6.8-7.9 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1003-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

OC 74 germanium transistor

Abstract: 27s21 OC 76 germanium transistor
Contextual Info: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005-BD April 2007 - Rev 19-Apr-07 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010