BCW32 7 Search Results

BCW32

Abstract: bcw33
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES BCW31 BCW32 BCW33 -B C W 3 1 -D 1 BCW32 - D2 BC W 31R -D 4 BCW32R - D5 BCW33 - D3 BCW33R - D6 - BCW31 - BCW29 - BCW32 - BCW30 - BCW33 - N/A ABSOLUTE MAXIMUM RATINGS.

BCW33

Abstract: BCW32 BCW32R BCW33R BCW31R BCW31 BCW29 BCW30 PARTMARKING MV DSA003672
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES – BCW31 – D1 BCW32 – D2 BCW33 – D3 BCW31 BCW32 BCW33 BCW31R – D4 BCW32R – D5 BCW33R – D6 E C – BCW31 - BCW29 – BCW32 - BCW30 – BCW33 - N/A

BCW29

Abstract: BCW30 BCW31 BCW32 BCW33 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 13 2000 Jul 04 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33

BCW32R

Abstract: BCW33R BCW31 BCW31R BCW32 BCW33 DS44
Contextual Info: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - D5 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE SYMBOL PARAMETER UNIT Collector-Base Voltage V CBO 32 V Collector-Emltter Voltage lc = 2.0mA

marking code 10 sot23

Abstract: BCW29 BCW30 BCW31 BCW32 BCW33 bcw31 bcw32 bcw33
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 2000 Jul 04 2004 Feb 06 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 FEATURES

FAIRCHILD SOT-23 MARK 30

Abstract: BCW31 BCW32 BCW33
Contextual Info: BCW31 / BCW32 / BCW33 BCW31 BCW32 BCW33 C E B SOT-23 Mark: D1 / D2 / D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Absolute Maximum Ratings* Symbol 3 TA = 25°C unless otherwise noted

BCW32

Abstract: BCW31 BCW33
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS

Contextual Info: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - 05 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE UNIT v CB0 32 V V ECO 32 V PARAMETER SYM BO L C ollector-B ase V oltage

Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02

BCW32

Contextual Info: DISCRETE SEMICONDUCTORS DAT BCW31; BCW32; BCW33 NPN general purpose transistors Product data sheet Supersedes data of 2000 Jul 04 2004 Feb 06 NXP Semiconductors Product data sheet BCW31; BCW32; BCW33 NPN general purpose transistors PINNING FEATURES • Low current 100 mA

str 450 a

Abstract: 05611 datasheet str 6707 BCW29 BCW30 BCW31 BCW32 BCW33 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 1997 Jan 29 1999 Apr 13 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33

bcw33 nxp

Abstract: BCW29 BCW30 BCW31 BCW32 BCW33 nxp bcw31
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32; BCW33 NPN general purpose transistors Product data sheet Supersedes data of 2000 Jul 04 2004 Feb 06 NXP Semiconductors Product data sheet BCW31; BCW32; BCW33 NPN general purpose transistors FEATURES PINNING

BCW32 7

Abstract: MARK D2 SOT23 BCW32 marking d2 SOT23
Contextual Info: SEMICONDUCTOR BCW32 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 D2 1 2 Item Marking Description Device Mark D2 BCW32 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

BCW32

Contextual Info: BCW32 BCW32 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted

Contextual Info: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 » EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C

bcw33

Contextual Info: n BCW31 BCW32 BCW33 i SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 • ^pT59 Ö3B 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 2 .4 1.4 1.2

BCW32

Abstract: BCW33 33T4 BCW31
Contextual Info: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE O UTLIN E D ETAILS ALL DIM EN SION S IN mm _3.0_ 2.8 0.48 0.38 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 0.14 _L02

Contextual Info: BCW32 BCW32 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted

BCW31

Abstract: BCW32 BCW33 BCW71
Contextual Info: S e m i c o n d u c t o r “ BCW31 BCW32 BCW33 SOT-23 BCW31 / BCW32 / BCW33 & Discrete POWER & Signal Technologies National B Mark: D1 / D21 D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. See

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

BCW29

Abstract: BCW30 BCW31 BCW32 BCW33 D3P SOT23 transistor SOT23 D3p
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jan 29 Philips Semiconductors Product specification

NPN marking 8e

Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jan 29 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32; BCW33 FEATURES PINNING • Low curren t 100 mA

TRANSISTOR SOT23

Abstract: BCW31 BCW32 transistor
Contextual Info: 970714 01 SIDA: 1/6 ELFA artikelnr. 71-310-63 BCW31 transistor SOT23 71-310-71 BCW32 transistor SOT23 970714 01 SIDA: 2/6 970714 01 SIDA: 3/6 970714 01 SIDA: 4/6 970714 01 SIDA: 5/6 970714 01 SIDA: 6/6