BCP69 IC Search Results

Contextual Info: UTC BCP69 PNP EPITAXIAL SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages.

BCP69 TRANSISTOR equivalent

Abstract: BCP69 UA-60
Contextual Info: BCP69 PNP Transistor Elektronische Bauelemente Silicon Epitaxial Transistor RoHS Compliant Product SOT-223 Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO : -20V * IC : 1A REF. Date Code A C D E I H

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of 1999 Apr 08 2002 Nov 15 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of 1997 Mar 12 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A

VPS05163

Abstract: BCP68 BCP69 BCP69-10 BCP69-16 BCP69-25
Contextual Info: BCP69 PNP Silicon AF Transistor
For general AF applications 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary type: BCP68 NPN 2 1 Pin Configuration VPS05163 Type Marking Package BCP69 BCP 69 1=B

transistor marking DG

Abstract: smd TRANSISTOR code marking 36 NXP SMD mosfet MARKING CODE TRANSISTOR SMD MARKING CODE 108 sot223 BCP69 TRANSISTOR equivalent BCP69 MARKING CODE SMD IC dg transistor smd MARKING SMD IC CODE SMD MARKING CODE transistor
Contextual Info: BCP69 20 V, 1 A PNP medium power transistor Rev. 06 — 2 December 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor in a Surface-Mounted Device SMD plastic package. Table 1. Product overview Type number[1] BCP69

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP EPITAXIAL SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP68 1 SOT-223 APPLICATIONS * General purpose switching and amplification

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 transistor bcp69
Contextual Info: Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter • General purpose switching and amplification

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR „ FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 „ 1 SOT-223 APPLICATIONS * General purpose switching and amplification under high current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP69 TRANSISTOR PNP SOT-223 FEATURES  High Current and Low Voltage  NPN Complement:BCP68 APPLICATIONS  General Purpose Switching and Amplification  1. BASE

BCP69

Contextual Info: Transistors IC SMD Type Product specification BCP69 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 High current. Three current gain selections. +0.1 3.00-0.1 1.4 W total power dissipation. +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3

BCP69

Abstract: transistor bcp69 BCP69-16 BCP69-25 BCP69 ic
Contextual Info: Transistors SMD Type PNP Medium Power Transistor BCP69 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 High current. Three current gain selections. +0.1 3.00-0.1 1.4 W total power dissipation. +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3

Contextual Info: • b 1353131 00E453Q 8H2 « A P X N. AMER PHILIPS/DISCRETE BCP69 b7E ]> J V SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic microminiature envelope, intended for low-voltage, high-current LF applications. QUICK REFERENCE DATA Collector-emitter voltage VgE = 0

BCP68

Abstract: BCP68-25 BCP69 FMMT449
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCP68 ISSUE 3 – FEBRUARY 1996 ✪ FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE sat COMPLEMENTARY TYPE – BCP69 PARTMARKING DETAIL – BCP68 BCP68 – 25 C E C B

BCP68

Abstract: BCP69
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR „ FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP68 „ APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages.

BCP68

Abstract: BCP68-10 BCP68-16 BCP68-25 BCP69
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP68 SOT-223 TRANSISTOR NPN FEATURES z z z z z 1 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP)

BCP68

Abstract: BCP68-10 BCP68-16 BCP68-25 BCP69 VPS05163
Contextual Info: BCP68 NPN Silicon AF Transistor
For general AF applications 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary type: BCP69 PNP 2 1 Type Marking Pin Configuration BCP68 BCP 68 1=B 2=C 3=E 4=C SOT223

BCP69

Abstract: cib34
Contextual Info: BCP69 PNP Silicon Epitaxial Transistor COLLECTOR 2, 4 P b Lead Pb -Free 4 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating 1 Symbol Value Unit Collector to Base Voltage VCBO -25 V Collector to Emitter Voltage

Contextual Info: Transistor IC SMD Type PNP medium power transistor KCP69 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 High current max. 1 A Low voltage (max. 20 V). +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 Base 2 ,4 Collector

Contextual Info: Product specification KCP69 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 High current max. 1 A Low voltage (max. 20 V). +0.1 3.00-0.1 +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 Base 2 ,4 Collector 3 Emitter 3 2 +0.1

BCP69 TRANSISTOR equivalent

Abstract: intel 965 ich INTEL 965 ich8 intel TA-181 CTRL18 ICH8 BCP69 RJ45 TAP UP 10 BASE-T Ethernet Coupling Transformer
Contextual Info: Intel 82566 Schematic Checklist version 1.2 NOTE: Do not use with dual footprint designs. Project Name Fab Revision Date Designer Intel Contact Reviewer SECTION General CHECK ITEMS Obtain the most recent documentation Documents are subject to frequent

BC52

Contextual Info: Medium power general purpose transistors NPN medium power general purpose transistors SOT223 SC-73 SOT89 (SC-62) DFN2020-3 (SOT1061) 6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.5 2.0 x 2.0 x 0.65 1350 1350 1100 Package M3D109 Size (mm) Ptot (mW) Polarity NPN VCEO (V)

High-Current Bus-Powered Devices

Abstract: FT8U232 "NAND Gate" FT8U245 Future Technology Devices Intl transistor high power BCP69 FT8U232AM FT8U245AM ZTX718
Contextual Info: Application Note AN232-10 FT8U232 / FT8U245 High-Current Bus-Powered Devices There are several points to consider when designing a high current, bus powered device with the FT8U232 or FT8U245 chips: 1. The high power logic can only be switched on if the device is configured by the system.