BC857 ST Search Results

BC857 st

Abstract: BC846 BC847 BC856 BC856A BC856B BC857 BC857A BC857B BC857C
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857

BC857

Abstract: BC846 BC847 BC848 BC856 BC856A BC856B BC857A BC857B BC858
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of 1999 Apr 12 2002 Feb 04 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858

BC857

Abstract: Transistor BC847 BC847 SOT23
Contextual Info: BC857 Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847 Ordering Information Type NO. Marking BC857 Package Code SOT-23 UA : hFE rank

TRANSISTOR 3F t

Abstract: bc557 BC556 SOT operation of BC557 TRANSISTOR BC856 BC856AW BC856BW BC857 BC857AW BC857BW
Contextual Info: BC856AW/BW BC857AW/BW BC858AW/BW/CW General Purpose Transistor PNP Silicon COLLECTOR 3 P b Lead Pb -Free 3 1 BASE 1 2 EMITTER 2 SOT-323(SC-70) MaximumRatings (TA=25°Cunless otherwise noted) Symbol Value Unit BC856 BC857 BC858 VCEO -65 -45 -30 V BC856 BC857

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

BC856B

Abstract: BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon * “G” Lead Pb -Free COLLECTOR 3 1 1 BASE 2 SOT-23 Collector-Base Voltage BC856 BC857 BC858,BC859 BC856 BC857 BC858,BC859 Symbol VCEO Thermal Characteristics Characteristics

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_

BC856B 3F

Abstract: 858A
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS A LL DIM ENSIONS IN m m

Contextual Info: BC856 BC857 BC858 CDIL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M a rk in g BC856 = 3D BC856A - 3A BC856B - 3B BC857 = 3H BC857A = 3E BC857B - 3F BC857C - 3G BC858 - 3M RC858A = 3J BC858B - 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m

BC857 st

Abstract: BC857 DSA00103967
Contextual Info: SEMICONDUCTOR BC857 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 3E 1 2 Item Marking Description Device Mark 3 BC857 hFE Grade E E, F * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy

Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M ark in g PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H J - 0_ BC857A = 3E 2.8 0 .14 0.48 BC857B = 3F BC857C = 3G 0.38 BC858 = 3M 3 BC858A = 3]

Contextual Info: • APX LLS3S31 0D2MM71 HbU N AMER PHILIPS/DISCRETE BC856 BC857 BC858 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 “ V CEX max. 80 50 30 V - v CEO max. 65 45 30 V Collector current peak value

Contextual Info: MOTOROLA Order this document by BC856ALT1/D SEMICONDUCTOR TECHNICAL DATA BC856ALT1 ,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1 ,BLT1, CLT1 General Purpose Transistors PNP Silicon BASE Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857

BC857

Abstract: BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856
Contextual Info: BC846.BC850 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type

BC857

Contextual Info: DC COMPONENTS CO., LTD. BC857 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Pinning

bc857 to92

Contextual Info: SWITCHING AND AMPLIFIER APPLICATIONS •Suitable for automatic insertion in thick and thin-film circuits ·Complement to BC857 ABSOLUTE MAXIMUM RATINGS TO-92 TA=25 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCES 50 V Collector-Emitter Voltage

Contextual Info: BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER Collector Base Voltage BC856 BC857 BC858, BC859 Collector Emitter Voltage

BC847

Abstract: Transistor BC857 C420-800
Contextual Info: BC847 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=45V • Complementary pair with BC857 Ordering Information Type NO. Marking BC847 Package Code SOT-23 RR : hFE rank

BC856-BC858

Abstract: BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A
Contextual Info: BC856…BC858 PNP Silicon General Purpose Transistors for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol BC856 BC857 BC858 Unit Collector Base Voltage -VCBO 80 50 30 V Collector Emitter Voltage

BC857G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC856/BC857/BC858 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES *Suitable for automatic insertion in thick and thin-film circuits *Complement to BC846/BC847/BC848 „ ORDERING INFORMATION Normal BC856-x-AE3-R

c858

Abstract: BC856R
Contextual Info: BC856,BC857,BC858,BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit：inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849