BC847ALT1G Search Results

SBC846B

Abstract: BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES SBC846ALT1G 1G t 90 SOT-23 SBC847C
Contextual Info: BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • • ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

IEC-6100-3-2

Abstract: NLT282224W3P4020S5P10F 1N4007 SOD123 2512 resistor IEC6100-3-2 1N4007 sma choke wurth 817 OPTO-coupler 817 OPTO 102-s41-w-103
Contextual Info: DN06040/D Design Note – DN06040/D Universal Input, 20 W, LED Ballast Device Application Input Voltage Output Power Topology I/O Isolation NCP1351 Solid State Lighting 85 – 265 Vac 20 W Flyback Yes Other Specifications Output 1 Maximum Output Voltage Ripple

MHVIC910HR2

Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

NIPPON CAPACITORS

Abstract: Transistor J438 CRCW08051001FKEA MRF21010
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MARKING 358 sot-23

Abstract: marking code 359 sot-23 marking 1G SOT23 359 sot23 On semiconductor date Code sot-23 355 sot-23 marking 1F SOT-23 sot-23 body marking 02 Code sot-23 on semiconductor 359 marking sot23
Contextual Info: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V COLLECTOR 3

FR SOT23-3

Abstract: BC847CLT1G 1B SOT23-3 BC848ALT1G BC846 BC846A BC846ALT1 BC847 1G SOT-23 BC848
Contextual Info: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V COLLECTOR 3

NSVBC847BLT3G

Contextual Info: BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • http://onsemi.com ESD Rating − Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring

Contextual Info: BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • http://onsemi.com ESD Rating − Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring

Contextual Info: Document Number: MW6S010N Rev. 5, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

transistor 1f sot-23

Abstract: transistor 2F to-236 BC847 sot package sot-23 transistors sot-23 "Marking code 26" sot-23 body marking A 4 marking codes transistors a1 sot-23 marking codes transistors sot-23 MARKING bc847 SOT-23 BC850CLT1G BC847BLT1G
Contextual Info: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • COLLECTOR 3 ESD Rating − Machine Model: >400 V

BC847CLT1G

Abstract: BC846 BC846A BC846ALT1G BC847 BC847A BC848 BC849 BC850 BC850B
Contextual Info: BC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • ESD Rating − Machine Model: >400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

marking WB1 sot-23

Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

CRCW08051001FKEA

Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
Contextual Info: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CRCW08051001FKEA

Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
Contextual Info: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

1500w audio amplifier circuit

Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
Contextual Info: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies

Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

atc100B100GT500XT

Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CRCW08052201FKEA

Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,

HSF-141C-35

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR