BC638 Search Results

BC638

Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
Contextual Info: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

Contextual Info: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Through Hole Package Capable of 830mWatts of Power Dissipation

Contextual Info: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ・Complementary to BC637. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter

BC838

Abstract: BC640 bc636 npn transistor BC63 transistor BC639 BC635 BC636 BC637 BC638 BC639
Contextual Info: B C 6 3 5 THRU’ B C 6 4 0 ÏA COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ‘ TO-92 for AF driver stages and amplifier applications up to 1A. ABSOLUTE MAXIMUM RATINGS

BC640

Abstract: BC638 BC636 bc639 bc638-10 BC635 BC636-10 BC637 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
Contextual Info: N AUER PHILIPS/DISCRETE bTE T> • bbS3R31 □OSTS'ib 4=17 ■ APX BÜ636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.

Contextual Info: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES 2000. 10. 2 Revision No : 0 1/1

24825

Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

BC637

Abstract: BC638
Contextual Info: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ᴌComplementary to BC637. N E K MAXIMUM RATING Ta=25ᴱ J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60

se150

Contextual Info: SEMICONDUCTOR BC637 T E C H N I C A L DATA EPI TAXI AL PLANAR NPN T RA NS I ST OR HIGH C U R R E N T TRA N SISTO RS. FEA TU RES • C om plem entary to BC638. DIM M A X IM U M RATING Ta=25°C C H A R A C T E R IS T IC SY M B O L C o llector-B ase V oltage

c640 pnp

Abstract: c 64016 C 63816 c638 Philips 64016
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 07 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A

bc638

Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.

bc 148 npn transistor

Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
Contextual Info: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)

bc640

Abstract: bc636 bc638
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc –45 –60

BC640

Abstract: bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC636 BC638 BC640 Collector-Base Voltage VCBO BC636 BC638 BC640 Emitter-Base Voltage

7Z104

Abstract: BC635 BC636 BC636-10 BC637 BC638 BC638-10 BC639 BC640 BC640-10
Contextual Info: BC636; BC638; BC640 PHILIPS INTERNA T IO NA L SbE » 711D Ö2L 0042QSÖ 013 BI P H I N SILICON PLANAR EPITAXIAL TRANSISTORS T - 2 ^ - 2 P'N P transistors in a plastic TO-92 envelope, prim arily intended fo r use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.

Contextual Info: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Through Hole Package Capable of 830mWatts of Power Dissipation

BC640

Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
Contextual Info: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER M AXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage VCEO -45 -60 -80 Vdc Collector-Base Voltage VCBO —45 -60 -8 0

BC638

Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
Contextual Info: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80

BC640

Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

transistor c63816

Abstract: c63816 c638 transistor c63816 transistor BC638 14046 BC637 BC638-16 BCP52 BCX52
Contextual Info: BC638; BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 06 — 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips

BC636

Contextual Info: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Through Hole Package Capable of 830mWatts of Power Dissipation

Contextual Info: N AUER PHILIPS/DISCRETE b'lE ]> • bbS3R31 □QSTS'lb Ml? « A P X BC636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended fo r use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.