BC635 TRANSISTOR E C B Search Results

transistor C 639 W

Abstract: bc736 transistor BC637 complement BC635 transistor 639 fa 506 BC637 BC639 TI 506 transistor I100O
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638f640 ABSOLUTE MAXIMUM RATINGS Ta= 250C Characteristic C o lle c to r E m itter V olta ge : at R Be = 1Kohm : : C o lle c to r E m itter V olta ge :

bc736

Abstract: transistor C 639 W transistor BC637 complement BC635 BC639 BC637
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • C om plem ent to BC 635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter V oltage at Rbe=1 Kohm C ollecto r E m itter V oltage C ollecto r E m itter V oltage

Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :

Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T a = 25 1C Sym bol C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage Collector Emitter Voltage

Bc636

Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • C o m p le m e n t to BC635/637/639 ABSOLUTE MAXIMUM RATINGS Ta= 25°C 1 Sym bol Characteristic C o llecto r Emitter Voltage: BC636 a t R BE = 1Kohm : BC638 V cE R : BC640

bc635

Abstract: transistor C 639 W
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

transistor C639

Abstract: transistor C635 c639 transistor C639 w
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635

BC635 TRANSISTOR E C B

Abstract: transistor C 639 W
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage at Rbe=1 Kohm Collector Emitter Voltage Collector Emitter Voltage

BC640

Abstract: BC635
Contextual Info: BC635 & BC640 General Purpose Transistor Features: • High performance, low frequency devices. • NPN/PNP Silicon Planar Epitaxial Transistors. • Driver Stages of Audio Amplifier Application. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33

bc639

Abstract: BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639

BC639

Abstract: BC635 TRANSISTOR E C B
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.

bc639

Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

bc639

Abstract: BC635 TRANSISTOR E C B applications of Transistor BC639 BC635-16 BC637
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.

NPN transistor ECB TO-92

Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

bc736

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • C om plem ent to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Em itter V oltage at R be =1 Kohm : BC635 : BC637 : BC639

BC635

Abstract: BC635-AP BC636
Contextual Info: BC635 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC635 BC635 TO-92 / Bulk BC635-AP BC635 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS

CTBC 635

Abstract: 635-16 TBC635-16 TBC635 63516 cbc635 BC635 TRANSISTOR E C B BC635 BC635-10 BC635-16
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC635 9AC TBC635 (Tin Finish Part) LEAD FREE TO-92 Plastic Package E CB High Current Transistor Complementary BC636 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)

high gain low voltage PNP transistor TO-92

Abstract: Marking STMicroelectronics TO92 BC635-AP TRANSISTOR marking code 432 BC635 BC636 china tv schematic diagram TRANSISTOR MARKING CODE w0 TRANSISTOR MARKING 705
Contextual Info: BC635 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC635 BC635 TO-92 / Bulk BC635-AP BC635 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY

BC639

Contextual Info: BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC

bc639

Abstract: BC635 BC637 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter

bc639

Abstract: BC637 BC635 BC635 TRANSISTOR E C B
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC

bc639

Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC

bc639

Abstract: BC635 BC637
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC

bc 148 npn transistor

Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
Contextual Info: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)