BC516 TRANSISTOR Search Results

BC516

Abstract: bc517 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1999 Apr 23 2004 Nov 05 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA

bc516

Abstract: bc517 BC517 data sheet
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA

BC516

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES

BC516

Abstract: BC516 equivalent transistor BC516 bc517 SC-43A bC516 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC516 PNP Darlington transistor Product data sheet Supersedes data of 1999 Apr 23 2004 Nov 05 NXP Semiconductors Product data sheet PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA

BC516

Contextual Info: BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted

BC516 equivalent

Abstract: BC516
Contextual Info: BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted

Contextual Info: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATING Ta=25 2002. 11. 13 Revision No : 0 1/1

BC516 equivalent

Abstract: str 6707 datasheet str 6707 str 6707 datasheet bc517 StR 40000 BC517 data sheet darlington pnp DATASHEET OF IC 733 PO 903
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor

BC517

Abstract: BC516 bc516 micro electronics
Contextual Info: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS J The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

Contextual Info: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC516 TRANSISTOR PNP 1.COLLECTOR FEATURES z High DC Current Gain z High Collector Current 2.BASE 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BC516

Contextual Info: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current

BC517

Abstract: BC516 bc516 micro electronics bc 517
Contextual Info: BC 5 1 6 BC 5 1 7 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS JP*. %. CASE T0-92F The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence

Contextual Info: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N E K MAXIMUM RATING Ta=25℃ G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current

bc516

Abstract: transistor BC516 transistor 257
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 emitter • Very high DC current gain (min. 30000). 2 base 3 collector APPLICATIONS • Where very high amplification is required.

Contextual Info: BC517 _ SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar d a rlin g to n transistor in a plastic TO 92 package. P-N-P com plem ent is BC516. Q UICK REFERENCE D A T A v CEO max. Collector-base voltage open em itter 30 V v CBO max. 40 V

Contextual Info: N AUER PHILIPS/DISCRETE D bbSBTBl 0DE755b fiOO BC517 l IAPX SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic TO-92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A v CEO max. 30 V Collector-base voltage open emitter

BC516

Abstract: BC517 HFE-30
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D • b b5 3T 31 G0E755b Ô00 L '' BC517 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic T O -92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A

Contextual Info: BC516 J V_ SILICON PLANAR DARLINGTON TRANSISTOR P-N-P s ilic o n p la n a r d a rlin g to n tra n s is to r in a p la s tic T O 9 2 p a cka g e . N -P-N c o m p le m e n t is B C 517. Q U IC K R E F E R E N C E D A T A - v CE0 m a x. 30 V C o lle c to r-b a s e v o lta g e o pen e m itte r

BC516

Abstract: BC517
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Darlington Transistors Type M axim um R atings N=NPN P=PNP BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BCV48 BCV49 BSP50 BSP51 BSP52 BSP60 BSP61 BSP62 PZTA13 PZTA14

BC517

Abstract: BC516 MPSA14 MPSA25 npn darlington TO92 transistor BC516 mps-a14 BC516 equivalent BC617 BC517 data sheet
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN LOW-POWER DARLINGTON TRANSISTORS TYPE NUMBER PACKAGE VCES max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 125 – PNP COMPL.

MT4104

Abstract: BCW83 bc517 2n5306 to 92F
Contextual Info: Miniature Transistors TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS Pd Ic VcEO mA (mW) (V) H fe min max Ic (mA) VcE (V) BC146 BC146R BC146Y BC146G BC200 N N N N P MT-42 MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 50 50 20 20 20 20 20 80 80 140 280 50 550

Contextual Info: Miniature Transistors TYPE NO. BC146 BC146R BC146Y BC146G BC200 N N N N BC200R BC200Y BC200G BCW83 CL151-4 P P P IC VCE VCE sat max IC rr min N.F. m ai f min max (mA) (V) (V) (mA) (MHz) (dB) (Hz) 20 20 20 20 20 SO 550 80 200 140 350 280 550 50 400 0.2 0.2

BC200G

Abstract: MT4102 SO 42 P BC146G BCW83 MPSD54 MT 87 BC146 BC146R BC146Y
Contextual Info: P O L A R IT Y M in ia tu re Transistors TYPE NO. M A X IM U M R A TIN G S H CASE 'c Pd mW (mA) V CE(SAT) FE •c VCEO (V ) min max (mA) VC E 0 (V) max 'c fr N .F. min max f (M Hz) (dB) (Hz) (V ) (mA) _ _ - — — 150+ 80+ 110+ 150+ 150+ 1.5+ 1.5+ 4 1.5+