BC373 TRANSISTOR Search Results

BC373RL1G

Abstract: BC373R BC372 BC372G BC373 BC373RL1
Contextual Info: BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage

BC373RL1G

Abstract: BC373 BC372 BC372G BC373G BC373RL1 BC373ZL1 BC373ZL1G BC373R
Contextual Info: BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector- Emitter Voltage VCES 100 80 Vdc Collector-Base Voltage v CBO 100 80 Vdc Emitter-Base Voltage

bc373

Abstract: BC372
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC372 BC373 80 Vdc 80 Vdc VCES 100 C ollector-B ase Voltage VCBO 100 E m itte r-B a se Voltage

bc373 equivalent

Abstract: BC372 equivalent BC237 JC 201 SC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage VCES

Contextual Info: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector −Emitter Voltage VCES 100 80 Vdc Collector −Base Voltage VCBO 100 80 Vdc Emitter −Base Voltage VEBO 12 Vdc Collector Current — Continuous

BC272

Contextual Info: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous

BC372

Abstract: BC373
Contextual Info: BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 2 Vdc Collector Current — Continuous

bc272

Abstract: BC372 BC373 DSA0011025
Contextual Info: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous

BC372

Abstract: BC373
Contextual Info: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage

TRANSISTOR 318

Abstract: Transistor BC373 BC373 BC372 BC373 TRANSISTOR bc372 transistor BC3735 BC372-5 T092 bc3725
Contextual Info: BC372 BC373 NPN SILICON HIGH VOLTAGE . . . designed foruserelay DAR LINGTON driver and all inductive load applications. . High Collector-Emitter BVCES Breakdown Voltage 100 V at 100 PA for BC372 -80 V at 100 VA for BC373 ● High Current gain lc- . 100/mAdc,

BC373

Abstract: transistors BC372 BC372
Contextual Info: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage

BC373

Abstract: BC372 TO226AA
Contextual Info: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit C o lle c to r-E m itte r Voltage VCES 100 80 Vdc C o lle c to r-B a s e Voltage

Transistors nd RR

Abstract: 8C372
Contextual Info: BC372 BC373 M A X IM U M R A T IN G S Symbol 8C372 BC373 C o lle ctor-E m itter Voltage VCES 100 80 Vdc C ollector-Base Voltage V CB O 100 80 Vdc Em itter-Base Voltage Rating Unit CASE 29-04, STYLE 1 TO-92 TO-226AA vebo 12 Vdc C ollector C urrent — C ontinuous

Contextual Info: BC373-16 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.10k

Contextual Info: BC373-40 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.60k

Contextual Info: BC373 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.10k

BC372

Abstract: bc373 BC373-25 BC373-16 to 92 case BC 372
Contextual Info: MOT ORO LA SC 12E D I t3b72SM QGÔSÔ53 1 | X S TR S/R F 7 BC372, -16, -25, -40 BC373, -16, -25 M A X IM U M RATINGS BC 373 U nit 100 80 Vdc 100 80 Vd c Sym bol BC 372 Collector-Emitter Voltage VC E O Collector-Base Voltage VCBO Em itter-Base Voltage R a tin g

2904 kd

Contextual Info: BC372 BC373 M AXIM UM RATINGS Symbol BC 372 BC 3 73 Collector-Emitter V oltage Rating VCES 100 80 Vdc C ollector-Base V oltage VCBO 100 80 V dc Em itter-Base V oltage U nit CASE 29-04, STYLE 1 TO-92 TO-226AA vebo 12 V dc Collector Current — C o n tin u o u s

B0679

Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52

MPS3904

Abstract: 2N5087 2N5088 2N5089 BC550C BC560C MPS6521 MPS6523 MPSA18 MPS-A63
Contextual Info: ON Semiconductor Selector Guide – Discrete Devices Plastic–Encapsulated Transistors continued Table 2. Plastic–Encapsulated Low–Noise and Good hFE Linearity hFE @ IC NPN PNP V(BR)CEO Volts Min Max mA 250 380 500 100 350 450 300 800 800 — 300 —

TO226AA

Abstract: 226AA
Contextual Info: Bipolar Transistors Low Noise and Good hFE Linearity NPN − BC550C PNP V BR CEO IC mA Max Min Max hFE fT MHz Min NF dB Max 2N5087 50 50 250 800 40 2.0 BC560C 45 100 380 800 250 (Typ) 2.5 MPSA18 − 45 200 500 − 100 1.5 2N5088 − 30 50 350 − 50 3.0 2N5089

MPSA25

Abstract: BC517 CBE 2N6426 2N6427 BC372 BC373 BC617 BC618 MPSA12 MPSA13
Contextual Info: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Darlington Transistors (TO-92) Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices have monolithic construction. Absolute M ax. Rating at 2 5 °C

BC517 "cross reference"

Abstract: 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
Contextual Info: Philips Semiconductors Small-signal Transistors and Diodes Cross Reference Transistors PHILIPS GA TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER COMPETITOR TYPE NUMBER PHILIPS-TYPE-No. PHILIPS-TYPE-No. 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904 2SA1774