BC337 HFE Search Results

bc337 pin out diagram

Abstract: bc337 BC337 figure BC33740 BC337-40 BC337-16 bc338-25 BC-337-16 BC337 pin out BC337-25
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector −Emitter Voltage VCEO 45 25 Vdc Collector −Base Voltage VCBO 50 30 Vdc Emitter −Base Voltage

BC337

Abstract: bc337 pin out diagram BC33 7-25 BC337 figure BC338-25 BC33x bc33725g BC33 BC337G BC337RL1G
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector − Emitter Voltage VCEO 45 25 Vdc

bc337 pin out diagram

Abstract: BC337 BC337 figure bc337-25 bc338-25 BC33740 BC337 pin out BC337-16 bc337-40 BC337 typical application
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Package is Available* 2 BASE MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector −Emitter Voltage VCEO 45 25

bc337

Abstract: cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716
Contextual Info: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO

BC337 figure

Abstract: bc337 BC338-25 BC337-40 BC337-25 BC33825 BC33740 BC337-16 BC338 BC337 hfe
Contextual Info: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO

OF TRANSISTOR BC337

Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 BC337-16 BC337-25 CBVK741B019 F63TNR
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

bc337 cross-reference

Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

bc337 pin out diagram

Abstract: BC337G BC33 BC337-25 BC337-40 BC33740 BC337-025G bc337 BC337 figure BC337 NPN transistor datasheet
Contextual Info: BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features • These are Pb−Free Devices COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50

bc337

Abstract: equivalent for BC337 BC337 equivalent bc337 transistor datasheet BC337 hfe bc337 transistor Transistor BC337 BC-337 HT640 ENCODER
Contextual Info: SEMICONDUCTOR BC337 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 25 BC337 2. Marking 4 Item Marking Description Device Name BC337 BC337 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.

bc337 pin out diagram

Abstract: BC337 figure BC3377 BC337 BC337G BC33 7-25 BC337-25G BC337 pin out BC337-40 BC337-xx
Contextual Info: BC337, BC337−25, BC337−40 Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage

BC337A

Contextual Info: BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features • These are Pb−Free Devices COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50

BC337

Abstract: BC338 BC337 MOTOROLA Motorola BC337
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

BC337 figure

Abstract: BC337 BC337 NPN transistor datasheet BC338
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

BC337

Abstract: TRANSISTOR BC337-25 bc337 transistor datasheet BC338 BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16
Contextual Info: BC337/338 BC337,-16,-25,-40 TRANSISTOR NPN BC338, -16,-25,-40 FEATURES Power dissipation TO-92 PCM: 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range

CBC337

Abstract: BC337 BC337 figure MOTOROLA bc338-40 BC337 MOTOROLA NPN bc338 BC338 bc337-40 le
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN Silicon BC337,- 16,-25,-40 BC338,- 16,-25,-40 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle c to r-E m itte r Voltage VCEO 45 25 Vdc

BC337

Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
Contextual Info: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J

BC337 pnp transistor datasheet

Abstract: transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC327 BC328 BC337-16
Contextual Info: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92

BC337

Abstract: TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES

BC327

Abstract: pin configuration Bc337 BC337 BC337 npn pin configuration Bc327 BC33716
Contextual Info: BC327 & BC337 General Purpose Transistors General Description and Suggested Applications: • PNP/NPN Silicon Planar Epitaxial Transistors. • Complementary Transistors for use in Driver and Output Stages of Audio Amplifiers BC327 PNP BC337 NPN TO-92 Plastic Package

Contextual Info: BC337 / BC338 BC337 / BC338 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case

Contextual Info: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92

BC337

Abstract: BC337 B 011
Contextual Info: MCC Micro Commercial Components Features • • • Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338) • Case Material: Molded Plastic. Classification Rating 94V-0 BC337-16/25/40