BC327-25
Abstract: BC327-40 BC32725 BC327-25-AP BC327-40-AP BC337-25 BC337-40
Contextual Info: BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC327-25 BC327-25 TO-92 / Bulk BC327-25-AP BC327-25 TO-92 / Ammopack BC327-40 BC327-40 TO-92 / Bulk BC327-40-AP BC327-40 TO-92 / Ammopack • ■ ■
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BC327-25
Abstract: BC327 BC327-40 BC33740 BC337-40 t d BC32725 BC327-25-AP BC327-40-AP BC337-25 BC337-40
Contextual Info: BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC327-25 BC327-25 TO-92 / Bulk BC327-25-AP BC327-25 TO-92 / Ammopack BC327-40 BC327-40 TO-92 / Bulk BC327-40-AP BC327-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP
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bc327-25bc327-40bc327-25-apbc327-40-ap+6bc327bc33740bc337-40 t dbc32725bc337-25bc337-40
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bc327
Abstract: BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25 BC337-25 BC337-40
Contextual Info: BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ Type Marking BC327-25 BC327-25 BC327-40 BC327-40 SILICON EPITAXIAL PLANAR PNP TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPES ARE BC337-25 AND BC337-40 RESPECTIVELY
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bc327-25bc327-40bc337-25bc337-40+6bc327bc32725bc327 equivalentbc32740bc327 npn transistor datasheetbc327/25
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BC327
Abstract: BC327 equivalent equivalent for BC327 transistor BC327 bc327 datasheet
Contextual Info: SEMICONDUCTOR BC327 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 25 BC327 2. Marking 4 Item Marking Description Device Name BC327 BC327 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.
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bc327bc327 equivalentequivalent for bc327transistor bc327+1bc327 datasheet
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bc327
Abstract: bc328 BC327 hfe
Contextual Info: BC327/328 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage BC327 BC328 BC327
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Contextual Info: Pro Electron Series /% JkJ » \ / w Sem iconductor'" V D e v ice C ase No. S ty le BC327 BC327A BC327-16 BC327-25 2-66 BC328 BC328-25 BC337 BC337A BC337-16 BC337-25 BC338 BC368 D iscrete POWER & Signal Technologies National TO-92 97 TO-92 (97) TO-92 (97)
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transistor BC327
Abstract: BC327 BC328 BC327 equivalent BC327 PNP transistor download datasheet transistor BC328 WEJ BC327
Contextual Info: BC327/BC328 BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation PCM: 0.625 TO-92 W (Tamb=25℃) Collector current ICM: -0.8 A Collector-base voltage BC327 -50 V VCBO: BC328 -30 V Operating and storage junction temperature range 1. COLLECTOR 2. BASE 1 2 3
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bc327/bc328bc327/bc328bc327+6-100matransistor bc327bc327 equivalentbc327 pnp transistor download datasheettransistor bc328wej bc327
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BC557AP
Abstract: BC327-5 BC557VI BC557 sot-23 BCX71RG BC307A ME0412 LOW-POWER SILICON PNP
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 BCX17 BCX17R BC327 BC327-18 BC327-5 BCS07-16 BCW35 BCW37 BCW68R BCW68 BCW68 BCW68F BCX76 BC486A BC486L18 BC486L5 BCS60A BC557VI BC557VI BCW69 BC307 BC307-18 BC307-5 BC307A BC307A18 BC307A5 BC557AP
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bcx17bcx17rbc327bc327-18+13bc327-5bcs07-16bcw35bcw37bcw68rbcw68bc557apbc557vibc557 sot-23bcx71rgbc307ame0412low-power silicon pnp
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BC327
Abstract: pin configuration Bc337 BC337 BC337 npn pin configuration Bc327 BC33716
Contextual Info: BC327 & BC337 General Purpose Transistors General Description and Suggested Applications: • PNP/NPN Silicon Planar Epitaxial Transistors. • Complementary Transistors for use in Driver and Output Stages of Audio Amplifiers BC327 PNP BC337 NPN TO-92 Plastic Package
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bc327bc337pin configuration bc337bc337 npn+2pin configuration bc327bc33716
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Contextual Info: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92
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BC327 NPN transistor datasheet
Abstract: bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16
Contextual Info: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92
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bc327-xbkbc328-xbkul94v-0bc327+11bc328bc337bc338bc327-16bc327 npn transistor datasheetbc327 equivalenttransistor bc32810d3bc327-25bc327-40bc328-16
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation PCM: TO-92 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current -0.8 A ICM: Collector-base voltage BC327 -50 V
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transistor BC327
Abstract: BC327 hfe TRANSISTOR BC327-40 BC327 NPN transistor BC337 sot54 mar 709 Bc337 npn transistor BC337 hfe
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification PNP general purpose transistor BC327 PINNING FEATURES
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m3d186bc327bc337mam281+10sca63115002/00/03/pp8transistor bc327bc327 hfetransistor bc327-40bc327 npn transistorbc337 sot54mar 709bc337 npn transistorbc337 hfe
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BC337 CBE
Abstract: bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC337 BC338 BC338 CBE
Contextual Info: BC327 / BC328 BC327 / BC328 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case
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Contextual Info: BC327 / BC328 BC327 / BC328 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case
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BC337 CBE
Abstract: BC338 CBE 10D3 BC327 BC327-16 BC327-25 BC327-40 BC328 BC328-16 BC337
Contextual Info: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2010-06-23 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6 ±0.1 4.6 2 x 1.27 625 mW
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bc327 b 011
Contextual Info: MCC TM Micro Commercial Components Features • • • Capable of 0.625Watts of Power Dissipation. Collector-current : -0.8A Collector-base Voltage :VCBO=-50V BC327 , VCBO=-30V(BC328) • Case Material: Molded Plastic. Classification Rating 94V-0 BC327 BC328
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bc338
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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bc337 fairchild
Abstract: BC337 pnp transistor
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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bc327/328bc337/bc338bc327bc328+3bc32ughbc337 fairchildbc337 pnp transistor
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BC307
Abstract: 2001 PNP TO-92
Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR(PNP ) FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM: -0.8 A Collector-base voltage VCBO : BC327 -50 V BC328 -30 V
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bc327 replacement
Abstract: equivalent components for transistor bc328 BC237 bf391 t Motorola MVAM125 bc327 equivalent SOT23 BC327-25
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC327 BC328 Unit Collector – Emitter Voltage VCEO –45 –25 Vdc Collector – Base Voltage
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bc327bc328226aat218a+11msc1621t1msc2404msd1819amv1620bc327 replacementequivalent components for transistor bc328bc237bf391 tmotorola mvam125bc327 equivalent sot23bc327-25
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Contextual Info: BC327 BC328 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • Capable of 0.625Watts of Power Dissipation. Collector-current : -0.8A Collector-base Voltage :VCBO=-50V BC327 , VCBO=-30V(BC328) PNP
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BC327
Abstract: BC328 TRANSISTOR BC327-40 BC327 PNP transistor TRANSISTOR pnp BC328 BC327 transistor BC328-16 transistor BC328 bc327 datasheet BC327-25
Contextual Info: BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 2Base 3Emitter J CLASSIFICATION OF hFE 1 A Product-Rank BC327-16
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bc327bc328bc327-16bc327-25+12bc328-16bc328-25bc328-40bc327-40-10ma-100matransistor bc327-40bc327 pnp transistortransistor pnp bc328bc327 transistortransistor bc328bc327 datasheet
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