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    BC307 PNP Search Results

    BC307 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA011
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TTA004B
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Datasheet
    2SA1943
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Datasheet

    BC307 PNP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC557AP

    Abstract: BC327-5 BC557VI BC557 sot-23 BCX71RG BC307A ME0412 LOW-POWER SILICON PNP
    Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 BCX17 BCX17R BC327 BC327-18 BC327-5 BCS07-16 BCW35 BCW37 BCW68R BCW68 BCW68 BCW68F BCX76 BC486A BC486L18 BC486L5 BCS60A BC557VI BC557VI BCW69 BC307 BC307-18 BC307-5 BC307A BC307A18 BC307A5 BC557AP


    Original     		bcx17bcx17rbc327bc327-18+13bc327-5bcs07-16bcw35bcw37bcw68rbcw68bc557apbc557vibc557 sot-23bcx71rgbc307ame0412low-power silicon pnp PDF

    BC307

    Abstract: bc307 pnp BC238 datasheet BC239 transistor 309 BC309
    Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309


    Original     		bc307/308/309bc309bc307bc308/309+4bc307 pnpbc238 datasheetbc239transistor 309 PDF

    T BC309

    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307


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    fr 309

    Abstract: BC307 309 T BC239 BC309
    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC309 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307


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    BC307

    Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9


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    bc307

    Abstract: BC308
    Contextual Info: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous


    Original     		bc307/308/309bc307bc308/309-10ma+2-100mabc308 PDF

    BC307

    Abstract: BC307B BC307C BC308C BC307 Motorola
    Contextual Info: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C


    Original     		bc307/dbc307bc307bbc307c+3bc308c226aabc307 motorola PDF

    transistor bc 238 b

    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS • LO W N OISE: BC309 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307


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    TYP 513 309

    Abstract: GE-514
    Contextual Info: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC309 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Sym bol C h aracte ristic Collector-Emitter Voltage :BC307 BC308/309 Collector-Emitter Voltage :BC307 BC308/309


    OCR Scan     		bc307/308/309bc309bc307bc308/309+3bc3q8/309typ 513 309ge-514 PDF

    BC307

    Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
    Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).


    OCR Scan     		bc307/8/9bc307bc309bc237/238/239+5bc308bc3078bc307 pnpbc308 pnp transistorbc307 complementary PDF

    BC308

    Abstract: BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP
    Contextual Info: Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications.


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    Characteristic curve BC107

    Abstract: TRANSISTOR 308B BC237 BC307 BC108 characteristic bc307b
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage


    Original     		bc307bc307bbc307cbc308c+8226aajunc218amsc1621t1msc2404characteristic curve bc107transistor 308bbc237bc108 characteristic PDF

    BC307

    Abstract: BC308 BC308 PNP transistor BC309 309 IC
    Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		bc307/308/309bc309bc307bc308/309+3bc308bc308 pnp transistor309 ic PDF

    transistor BC 458

    Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
    Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		bc307/308/309bc309bc307bc308/309+7bc308bc308abutransistor bc 458transistor bc 308cbc 2001 transistorbc307btabc237 PDF

    bc307

    Abstract: BC308 BC307 complementary
    Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


    Original     		bc307/8/9bc309bc237/238/239bc307+2bc308bc307 complementary PDF

    bc307

    Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
    Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N


    Original     		bc307/8/9bc309bc237/238/239bc307+5bc308bc308 pnp transistortransistor bc309bc237bc307 complementary PDF

    BC307

    Abstract: BC308 BC309 BC308 PNP transistor
    Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V ceo= -4 5 V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)


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    BC307

    Abstract: BC238 datasheet BC239 BC309 transistor bc237
    Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		bc307/308/309bc309bc307bc308/309+3bc238 datasheetbc239transistor bc237 PDF

    bc307bta

    Abstract: BC307
    Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		bc307/308/309bc309bc307bc308/309+1bc307bta PDF

    BC308A

    Abstract: Transistor BC 308C BC307 Bc308
    Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		bc307/308/309bc309bc307bc308/309+3bc308bc308atransistor bc 308c PDF

    bc307b

    Abstract: bc307 BC308C
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C v CEO -45 -25 Vdc Collector-Base Voltage VCBO -50 -30 Vdc Emitter-Base Voltage Collector-Emitter Voltage


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    BC307

    Abstract: BC238 datasheet BC239 BC309 308 transistor
    Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		bc307/308/309bc309bc307bc308/309+3bc238 datasheetbc239308 transistor PDF

    BC307

    Abstract: BC308 PNP transistor download datasheet BC308
    Contextual Info: BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol BC307 BC308 Unit Collector Base Voltage -VCBO 50 30


    Original     		bc307bc308bc308 pnp transistor download datasheet PDF

    BC307

    Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237
    Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC307 VCEO=-45V. ᴌLow Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


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