BC237
Abstract: BC238 bc2378 transistor bc237 bc337 BC239 transistor bc238 bc237 transistor
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 V ceo=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (V Ce =6V, Ic=0.1mA, f=lkHz).
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bc237/8/9bc237bc239bc307/308/309+5bc238bc2378transistor bc237 bc337transistor bc238bc237 transistor
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bc237
Abstract: bc238 bc239 BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A
Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K
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bc237/8/9bc239bc307/308/309bc237+7bc238bc23agebc237 complementarytransistor bc238bc307transistor bc239120120a
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BC237
Abstract: BC237 complementary bc238 bc239 BC307
Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC237 VCEO=45V. ・Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz).
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bc237/8/9bc239bc307/308/309bc237+3bc238bc237 complementarybc307
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transistor bc237 bc337
Abstract: BC238 NPN transistor download datasheet BC238 BC238 datasheet BC237 transistor bc237 transistor bc238 BC239 BC239 NPN transistor download datasheet bc238 equivalent
Contextual Info: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC237 VCEO=45V. ᴌLow Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz).
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bc237/8/9bc237bc239bc307/308/309+8bc238transistor bc237 bc337bc238 npn transistor download datasheetbc238 datasheettransistor bc237transistor bc238bc239 npn transistor download datasheetbc238 equivalent
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transistor bc237
Abstract: bc238 BC237
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 VCECJ=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (Vce=6V, Ic=0. 1mA, f=lkHz). • For Complementary With PNP type BC307/308/309.
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bc237bc239bc307/308/309bc237/8/9+2bc238transistor bc237
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BC237
Abstract: BC238 BC239 NPN transistor BC239 transistor bc237 transistor BC238 transistor bc237 bc337 Transistor bc239 BC238-5 bc2378
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 V Ceo=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (V ce=6V, Ic=0.1mA, f=lkHz). • For Complementary With PNP type BC307/308/309.
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bc237/8/9bc237bc239bc307/308/309+8bc238bc239 npn transistortransistor bc237transistor bc238transistor bc237 bc337transistor bc239bc238-5bc2378
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BC238 h parameter
Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
Contextual Info: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.
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bc107bc167bc237bc317+10bc177bc257bc307bc238 h parameterbc313bc231bc101bc168bc32030hz-15khz
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BC167
Abstract: BC107 CE amplifier BC1O7 BC237 complementary hFE Group BC169 bc107 bc168
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 CRO THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.
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bc107bc177bc167bc257+12bc237bc307bc317bc320o-92bo-92fbc107 ce amplifierbc1o7bc237 complementaryhfe groupbc169bc168
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BC519
Abstract: fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC107 BC237 complementary BC238
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.
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bc107bc177bc167bc257+11bc237bc307bc317bc320t0-92bbc519fbc237bc107-108-109bc313bc237 complementarybc238
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bc237 siemens
Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC
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fls35bqsg041540q62702-c697q62702-c276+16q62702-c277q62702-c698q62702-c278q62702-c279q62702-c280q62702-c699bc237 siemensbc238bc239bc237237bc307bc238cc237bmarking code 50g to92c-239
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bc1078
Abstract: BC317 BC167 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.
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bc107bc167bc237bc317+9bc257bc307bc1078bc1o7bci69bc168bc108 cbebc2378t0-92a
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BC177
Abstract: BC257 BC520 bc1778 bc258 BC317 BC321 BC320 bc3078 BC107
Contextual Info: BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 KmmoGtgfimoMNHwoMMwmNwmNmomMMwmmmoooHMígetMemmm^^ THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9.
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bc177bc257bc307bc320+8bc107bc237bc520bc1778bc258bc317bc321bc3078
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BC257
Abstract: BC307 BC107 BC307 micro electronics bci77 BC177 BC178 BC179 BC237 BC258
Contextual Info: BC 177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 / o o er o LU LU THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9 BC257, 8, 9 are complementary to BC167, 8, 9
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bc177bc257bc307bc320+7bc107bc237bc307 micro electronicsbci77bc178bc179bc258
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BC257
Abstract: BC320 BC107 transistor BC257 BO307 BC237 BC317 YC 322 BC177 BC178
Contextual Info: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.
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bc177bc257bc307bc320+7bc107bc237transistor bc257bo307bc317yc 322bc178
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BC307
Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC307 VCEO=-45V. ᴌLow Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).
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bc307/8/9bc307bc309bc237/238/239+6bc308bc308 pnp transistor download datasheettransistor bc237 bc337transistor bc309bc3078bc237
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bc307
Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N
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bc307/8/9bc309bc237/238/239bc307+5bc308bc308 pnp transistortransistor bc309bc237bc307 complementary
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bc307
Abstract: BC308 BC307 complementary
Contextual Info: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).
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bc307/8/9bc309bc237/238/239bc307+2bc308bc307 complementary
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BC307
Abstract: BC308 BC309 BC308 PNP transistor
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V ceo= -4 5 V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)
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bc307/8/9bc307bc309bc237/238/239+2bc308bc308 pnp transistor
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BC307
Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).
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bc307/8/9bc307bc309bc237/238/239+5bc308bc3078bc307 pnpbc308 pnp transistorbc307 complementary
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BC307
Abstract: BC308
Contextual Info: SEMICONDUCTOR BC307/8/9 T E C H N I C A L DATA E PITA X IA L PLANAR PNP TRA N SIST O R G E N E R A L PU R PO SE A PPLICATION. LOW N O ISE A M PL IFIE R APPLICATIO N. FEA TU RES • High Voltage : BC307 VCEO=-45V. • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)
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bc307bc309bc237/238/239bc307/8/9+3bc308-10ma100mhz
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bc322
Contextual Info: , One. BC177,8,9 BC257,8,9 .BC307,8,9 BC320,1,2 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS,
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bc177bc257bc307bc320+4bc107bc167bc237bc322
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BC237
Abstract: BC108 characteristic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors PNP Silicon 14 13 12 11 10 9 8 6 7 MPQ7091 MPQ7093* COMPLEMENTARY *Motorola Preferred Device 1 2 3 4 5 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7091 MPQ7093 Unit Collector – Emitter Voltage
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mpq7091mpq7093chara218amsc1621t1+6msc2404msd1819amv1620mv1624bc237bc108 characteristic
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MPQ7051
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon 14 13 12 11 10 9 8 6 7 COMPLEMENTARY 1 2 3 4 5 MPQ7051 Voltage and current are negative for PNP transistors TYPE B Motorola Preferred Device MAXIMUM RATINGS Rating Symbol
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mpq7051junction218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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BC237
Abstract: S 178 A INTEGRATED CIRCUIT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPQ7041 MPQ7042 MPQ7043* Quad Amplifier Transistors NPN Silicon 14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 5 *Motorola Preferred Device 6 7 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7041 MPQ7042 MPQ7043 Unit Collector – Emitter Voltage
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mpq7041mpq7042mpq7043msc1621t1+5msc2404msd1819amv1620bc237s 178 a integrated circuit
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