BC183 2 Search Results

BC184 pin out

Abstract: BC183 BC182 BC182B BC182A BC184
Contextual Info: BC182,A,B BC183 BC184 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC182 BC183 BC184 Unit Collector–Emitter Voltage VCEO 50 30 30 Vdc Collector–Base Voltage VCBO 60 45 45 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous

BC182 NPN transistor datasheet

Abstract: transistor bc182 BC183 BC182 NPN transistor bc182 BC183 transistor BC182 datasheet bc182* transistor BC184 DATASHEET BC184
Contextual Info: BC182…BC184 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC182 BC183, BC184

CBC184

Abstract: BC182 BC184 pin out bc184 BC183 BC182-18 BC184-B-C BC183A 2N5551 TO92 india limited BC184B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC182, A, B BC183, A, B, C BC184, B, C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package C For Lead Free Parts, Device Part # will be Prefixed with "T"

BC238

Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B
Contextual Info: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC182, A, B BC183, A, B, C BC184, B, C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package C For Lead Free Parts, Device Part # will be Prefixed with "T"

bc183b

Abstract: BC183B MOTOROLA 2904S cbc182 BC184C transistors BC 183 BC182 bc184b BC183 2 bc184
Contextual Info: MOTORCLA SC ISE D I t.3t.755M QaflSfl31 2 | XSTRS/R F - r r W 7 BC182, A, B BC183, A, B, C BC184, B, C M A X IM U M RATINGS Sym bol R a t in g BC BC BC 182 183 184 U n it C o lle c to r-E m itte r V o lta g e VcEO 50 30 30

bc1828

Abstract: BC133 SC183 bc1838 8C132 BC107 characteristic BC1848 8C237 BC183 3c184
Contextual Info: i 356- 5 2 °i COMPONENTS M A X IM U M R A T IN G S BC182 BC183 BC184 R atin g ac ac ac Sym bol Unit 182 133 134 C A S E 29-02, S T Y L E 17 TO-92 TO -22 6A A Collector-Smitter Voltage ! v CE0 50 30 30 Vdc Coiiector-3asa V o io g a i, VC30 50 IS 45 vdc

BC182

Abstract: BC183 BC184 transistor bc182 BC182A BC182B transistor BC184 bc182 transistor BC184 transistor
Contextual Info: ST BC182 … BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC Collector Base Voltage

BC182

Abstract: BC184 transistor bc182 BC183 transistor BC184 BC184 transistor transistor bc182B bc182 transistor ST transistor BC184 NPN
Contextual Info: ST BC182 … BC184 NPN Silicon Epitaxial Planar Transistor Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC Collector Base Voltage

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC171A BC171B Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^080 ^CFO V EBO Po (V) Min (V) Min (V) Min ON) 50 45 6 50 45 6 (A) Tc=25°c 0.35 0.35 'cB O V CB ^ES V CE (uA)

bc1828

Abstract: BC171B BC172B BC174 BC172 bc184c BC171A BC172A BC172C BC174A
Contextual Info: «UHM P M C n p g ^ r l i l S W W W M Electrical Characteristics Ta=25”C, Unless Otherwise Specified Maximum Ratings Type No. Po 'c (W) (A) Tc=25°< e 'c & (mA) nf C„ COIL 0 Freq (MHz) (pH Case Max Style ^CBO V CE0 ^ ebo (V) Min (V) Min (V) Min

BC147B

Abstract: BC148B BC147A BC149B BC148A BC149C BC148C BC148 BC157A BC158B
Contextual Info: ADVANI OERLIKON/ SEMICOND / 3bE ]> B OSblbMÖ O O O O D I O M M S E LI A s i l ic o n t r a n s i s t o r s NPN ‘ PNP Po =0.25W gTa«2B°C Caso: SOT-25 JBC147 BC147A >' BC147B < BC148 BC148A £ BC148B BC148C 080149 , BC149B /•BC149C f BC157 Vr BC157A , BC157B

MPSA18 BC550

Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
Contextual Info: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F

BCY56

Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

BC148

Abstract: BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min V CE(sat) max IT Cob N.F. IC VCE max IC m in max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) 5 5 5 5 5 0.6 0.6 0.6 0.6 0.35 100 100 100 50 1 150

bc238

Abstract: ZTX304 ZTX108 BC107P BC182P BC212P BC546P BC547P BC556P BC557P
Contextual Info: TABLE 1: NPN GENERAL PURPOSE The d e vice s s h o w n in this table are general p urpose tra n sisto rs d esigned for sm all signal am plification from d.c. to radio frequencies. Typical application areas include: A U D IO F R E Q U E N C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L

bcv59

Abstract: N705 bcv-59 ZTX301
Contextual Info: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C

BC239C equivalent

Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

BC238B

Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

2N4036 g1

Abstract: BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

BD373

Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
Contextual Info: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

bcy58

Abstract: BFS98 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 ZTX452 ZTX453
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: A U D IO FREQ UENCY A M P LIF IER S, D R IV E R S and O U TPU T ST A G E S , O SC IL L A T O R S, A N D G EN ERA L PU RP O SE