transistor BC 536
Abstract: aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor
Contextual Info: BU 536 TTdUFHiKiKIiM electronic Creati»Technologies' Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique Short switching time • Glass passivation Power dissipation 62 W • High reverse voltage
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v777-t012615a3d1n15a3din+10transistor bc 536aeg power base 60 btransistor bu 536transistor bu 311marking jmt0p3bu 103a transistorbu536bc 536bc 536 transistor
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BCX51 BCX52 BCX53 AB
Abstract: BCX51 BCX52 BCX53 sot-89 Marking aj
Contextual Info: ô23SbQS DD242Sb b W S I E G L47E D PNP AF Transistors T '3 ^ BCX 51 BCX 53 1 7 SIEMENS AKTIENGESEL LSCH AF _ • • • • For A F driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: B C X 54 - . B C X 56 NPN
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235b05dd2422b103mabcx53+4bcx51 bcx52 bcx53 abbcx51bcx52sot-89 marking aj
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SSY20
Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3
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ssy20sf828veb mikroelektronikfunkamateur+6bux 127sf126sf 127sf128sf826sf 829 b
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transistor BC 536
Abstract: TRANSISTOR IFW MK 2051 sanyo CG 2SC3066 transistor bc 537 bt 2025 TRANSISTOR IFW 27 HO 60-NP
Contextual Info: SANYO SEMICONDUCTOR CORP 3EE D 7 tH 7 D 7 b DOCHEl? 7 T - A .9 - A 1 N P N Epitaxial Planar Silicon C om posite Transistor 2029A Differential Am p Applications 976B Applications . Differential amp, current mirror Features . Excellent in t h e r m a l e q u i l i b r i u m and suited for use in d i f f e r e n t i a l a m p
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t-91-20sc-43transistor bc 536transistor ifw+7mk 2051sanyo cg2sc3066transistor bc 537bt 2025transistor ifw 27ho 60-np
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2SA1210
Abstract: 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536
Contextual Info: SANYO SEMICONDUCTOR CORP IE E D I 7 cH 7 0 7 b T - a - c n 2SC2912 NPN /pnp Epitaxial Planar Silicon Transistors 200 9A High Voltage Switching, AF 1 5 0 W Predriver Applications 2SA1210 780C Features • Adoption o f FBET process • High breakdown voltage
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2sc2912707li2sa1210characteristics/h81+7b12520dgb752p33-07a1210la 1201 sanyoto-220aatransistor bc 536
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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smd transistor N2 1p
Abstract: transistor BC rx std 7614 FBC 30 A bc 107 colpitts oscillator fsk modulation and demodulation TH701
Contextual Info: 7+ 868/915MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y Y Y Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator
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868/915mhzlqfp44th7111smd transistor n2 1p+6transistor bc rxstd 7614fbc 30 abc 107 colpitts oscillatorfsk modulation and demodulationth701
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HC-49SMD
Abstract: smd transistor N2 1p H*49S transistor BC rx BC115 smd transistor nd 2e PLL FSK DEMODULATOR ,double down conversion superheterodyne receiver transistor 24 lq smd transistor
Contextual Info: 7+ 315/433MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y Y Y Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator
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315/433mhzlqfp44th7110hc-49smd+9smd transistor n2 1ph*49stransistor bc rxbc115smd transistor nd 2epll fsk demodulatordouble down conversion superheterodyne receivertransistor 24lq smd transistor
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transistor BC 339
Abstract: marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
Contextual Info: DISCRETE SEMICONDUCTORS BC859; BC860 PNP general purpose transistor Product specification Supersedes data of 1997 May 26 File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS PHILIPS Philips Semiconductors Product specification
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bc859bc860bc849bc850+10b0859abc859btransistor bc 339marking code 4d301 marking code pnp transistorlow noise transistor bc 234transistor bc 536sot23 npn marking 4dmarking 4d npnl43 transistor
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VEB mikroelektronik
Abstract: mikroelektronik DDR mikroelektronik RFT elektronik DDR DDR Schaltkreise bauelemente DDR elektronische bauelemente rft Transistoren DDR service-mitteilungen RFT Service Mitteilung
Contextual Info: RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Ausgabe ¡^M\radio-te/evision\ Ckt. 1988 f VEB 00 SERVICE-MITTEILUNGEN Seite 1-9 Mitteilung aus dem VEB RFT IV RuF Leipzig/Servicevorbereitung Effektive Eroduktionstechnologie in der KonBumguterelektronik - kontra Heparaturtechnologie ?
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veb mikroelektronikmikroelektronik ddrmikroelektronik rftelektronik ddr+6ddr schaltkreisebauelemente ddrelektronische bauelemente rfttransistoren ddrservice-mitteilungenrft service mitteilung
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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af106apc ups circuit diagram rs 1500apc ups es 500 circuit diagramapc ups 650 circuit diagram+7schematic diagram apc back ups xs 1000taa550apc ups circuit diagramups apc rs 1000 circuit diagramups apc rs 800 circuit diagramapc back es 500 ups circuit diagramcircuit diagram apc ups 700
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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tfk diodes byw 7613009 jt 43byw 56 equivalenttfk diodes 148+6tfk u 264tfk 804tfk 421diode byw 60diode byt 45 jbyt 45 j
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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3866sbf247 equivalentbrochage des circuits integrestriac gk+6transistor bc 564bc547eti small signal fet cataloguebcw 91 transistorsescosescosem
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transistor HAN 819
Contextual Info: QPA602 High-Speed Precision Difet• OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • • • • • • • PRECISION INSTRUMENTATION WIDE BANDWIDTH: 6.5MHz HIGH SLEW RATE: 35V/}ia LOW OFFSET: ±250|iV max LOW BIAS CURRENT: ±1pA max FAST SETTLING TIME: 1 ji* to 0.01%
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opa60225rrwtransistor han 819 |
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820byx22-400byx22-600byx22-800+14byx26-60yx26-150byx36-1byx36-3001.0 k mef 250me4003me4002ma0411transistor me6101transistor bc 172b2n2959transistor bf 1752n51732n3072
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GC 72 smd diode
Abstract: smd zener diode color band TDA4882 smd zener diode color band 4.7 transistor BC 584 6 PIN STR FOR 17 INCH MONITOR 6 pin STR MONITOR IC bc 339 GC smd diode BAV21
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA4882 Advanced monitor video controller for OSD Product specification Supersedes data of December 1994 File under Integrated Circuits, IC02 1997 Sep 04 Philips Semiconductors Product specification Advanced monitor video controller for OSD
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tda4882sca55547047/1200/02/pp28gc 72 smd diode+8smd zener diode color bandsmd zener diode color band 4.7transistor bc 5846 pin str for 17 inch monitor6 pin str monitor icbc 339gc smd diodebav21
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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hbf4727azd 607 - triaczd 607 - triac circuithbf 4727a+6tda3310hbf4727hbf4740dtl-9307-stage frequency dividerbf479s
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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ldr 03valvo halbleiterldr -03cny63+6cny62byx 71 800cxy19valvoldr 07bzw10-12
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TRANSISTOR 5101 FG
Abstract: j 13007-2 WM7 SMD transistor marking code MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR TRANSISTOR SMD MARKING CODE s01 smd transistor bq SAA 1025 AHL touch 1015G ELAP cm 76
Contextual Info: NEC USER’S MANUAL J0.PD75518 4 BIT SINGLE-CHIP MICROCOMPUTER HPD75517 X P D 7 5 5 1 8 |iPD75P518 Document No. IEU-1305E (O. D. No. IEU-743E Date Published January 1995 P Printed in Japan F£C Corporation 1990 •I b427SSS 0D^S3EH 174 ■ Cautions on CM OS D evices
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upd75518hpd75517ipd75p518ieu-1305e+16ieu-743eb427ssson-154pd75518b42752500r57q7transistor 5101 fgj 13007-2wm7 smd transistor marking codemarking code n-channel mos field effect transistortransistor smd marking code s01smd transistor bqsaa 1025ahl touch1015gelap cm 76
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2s301bs9300-c-5982s305bs9300-c-366+162s3072s322cv7396bs9300-c-396cv7647bs9300-c-647tis43equivalent of transistor bc214bf257 texasequivalent of transistor bc212 bc 2142n696 texas instrumentsq2t2222tis70bfr40kd 2060 transistorbf195 equivalent
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665n76889nma748pcma709pc+16ja710pca711pcia712pca723pcha741pca747pcac125k6an7tungsram 3s035t-1ecc83 application notesecl86dg 7-123tungsramac125uzpentode pl 508ot-400 tungsram
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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rpy 86valvo halbleiterrpy94cqy 24+6bv ei 30-20 3001ldr 03diode byx 64 600valvo transistorenkp101abav99-1
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UPD75P518GF-3b9
Abstract: E 13007-2 IC-2672 UPD75P518GF uPD75P518 13007-2 WM7 SMD transistor marking code pD75P518GF SMD TRANSISTOR MARKING code wm2 transistor 2n 7849
Contextual Info: USER'S MANUAL µPD75518 4 BIT SINGLE-CHIP MICROCOMPUTER µPD75517 µPD75518 µPD75P518 NEC Corporation 1990 Document No. IEU-1305E O. D. No. IEU-743E Date Published January 1995 P Printed in Japan Cautions on CMOS Devices 1 Countermeasures against static electricity for all MOSs
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pd75518pd75517pd75p518ieu-1305e+12ieu-743eport0-port15upd75p518gf-3b9e 13007-2ic-2672upd75p518gfupd75p51813007-2wm7 smd transistor marking codepd75p518gfsmd transistor marking code wm2transistor 2n 7849
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