BC 390 TRANSISTOR Search Results

bc 107 transistor

Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP

Contextual Info: 5SC » • ÛH3SbOS QÜ0MSS4 T ■ S I E 6 r NPN Silicon AF Transistors - 25C BCX 22 BCX 24 0 4 7 *5 ^ SIEMENS AKTIEN6ESELLSCHAF BCX 22, BCX 24, and BCX 94 are epitaxial NPN silicon planar transistors in TO 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case. These transistors

transistors BC 458

Abstract: BC 458 transistors BC 458 pnp transistor BC 458 BC 459 transistors BC 459 bf 478 BC479 TO-18 BC-177 pnp transistor 2N5415
Contextual Info: rZ J SGS-THOMSON ¡M »iü i g¥[M «(gS GENERAL PURPOSE & INDUSTRIAL ^7# SMALL SIGNAL TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS - TO 18 v CEO hFE mln/max ic fi% Type (mA) (V) 7> v CE(sat) max lcflB (mA) (V) «T min NF (MHz) (dB) (mW)

AAES

Abstract: V3061
Contextual Info: tì I . 2SC D • û23Sfc.0S GD0425Ô 7 H S I E â Z5C U*t258 PNP Silicon AF Transistors - BCX23 BCX 3 9 SIEMENS AKTIENGESELLSCHAF - — — =- -— BCX 2 3 and BCX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case

hFE-1000 BC

Abstract: C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin
Contextual Info: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 875 BC 877 BC 879

bc 170

Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

SMD TRANSISTOR MARKING 2A

Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage

Y59 r 120

Contextual Info: N AUER PHILIPS/DISCRETE fe.'lE D bb53^31 DQS7bE3 245 BCY58 BCY59 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case, for use in ampli­ fier and switching applications. QUICK REFERENCE DATA

TP2222

Abstract: TP2222A TP2907A TP3116 MPS6566 TP2483 MPS6515 MPS6516 MPS6517 MPS6518
Contextual Info: ^ Econ olin e R P la stic -M o ld e d If H U U C Silicon S E P T R Transistors GENERAL-PURPOSE SMALL-!IIGNAL AMPLIFIERS >oc < o o. _i Type No. Pd D -C C U R R E N T G A IN h fE Lim ts T a = V (BR) V(BR) V(BR) I c b o C onditions VcE(SAT) 25 C C BO CEO E BO

transistor BC 245

Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Contextual Info: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the

Contextual Info: N ~7 > y 7 $ /Transistors 2SD1225M/2SD1858 '> 7 ^ 7 ° U - : J - B N P N y 'J=]> h 7 > y ^ ^ 2SD1225M 4i f,Bc 02^ 7* iillliffl/M e d iu m Power Amp. 2SD1858 Epitaxial Planar N PN Silicon Transistors SO- >4 VT.\' vjl - 7- • y |- fj\r > S 0 /D |m n s|or>s U n it: mm)

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

BCY59

Abstract: bcv59 BCY58 BCY58X BCY58IX BCY59IX 71519 BCY59-10 BCY58VII BCY58VIII
Contextual Info: N AUER PHILIPS/DISCRETE b*lE » • bbSB'iBl □ 0E7fc>E3 E45 HiAPX II BCY58 BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case, fo r use in ampli­ fie r and switching applications.

Contextual Info: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 *0'2 4.5 1. 6 collector power dissipation, Pc = 2 W,

Contextual Info: Bill of Materials for the NCP1255PRNGEVB Evaluation Board Substitution Allowed Lead Free Designator Quantity Description Value Tolerance Footprint Manufacturer Manufacturer Part Number R1 R2a, R2b R3 R4b 1 2 1 2.2 k 1.5 ohm 0,5 W 1k - 1% 1% 1% - SMD0805 SMD2510

2SD2212 REEL

Abstract: 2SD1898 marking 2sd1664 2SD1834
Contextual Info: 2 W S O T- 8 9 B I P O L A R T R A N S I S T O R S • • • SQP £ each 0.1 0.5 0.1 0.5 0.1 0.5 0.5 0.1 0.20 POA 0.10 0.14 0.12 0.13 0.16 0.18 POA 0.5 0.1 0.5 0.5 0.5 0.13 0.13 0.15 0.18 POA 0.5 0.5 0.16 POA 0.01 POA 0.5 1.0 1.0 1.0 0.13 0.18 POA 0.17 SC-62 SOT-89 DIMENSIONS

symbol of Bc 148 transistor

Abstract: SOT-89 marking bc of transistor bc 148 BTB1188M3 BTD1766M3 BC 148 TRANSISTOR SOT89 bc on BC 148 TRANSISTOR
Contextual Info: CYStech Electronics Corp. Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1188M3 Features • Low VCE sat , VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics

PTH60G30BD150N

Abstract: PTH62H02AR180M265 PTH59F PTH61
Contextual Info: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage

BF681

Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
Contextual Info: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure

2SB1240

Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

TRANSISTOR BC 545

Contextual Info: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data

TRANSISTOR BC 545

Contextual Info: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·