BC 390 TRANSISTOR Search Results

bc 107 transistor

Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP

Contextual Info: 5SC » • ÛH3SbOS QÜ0MSS4 T ■ S I E 6 r NPN Silicon AF Transistors - 25C BCX 22 BCX 24 0 4 7 *5 ^ SIEMENS AKTIEN6ESELLSCHAF BCX 22, BCX 24, and BCX 94 are epitaxial NPN silicon planar transistors in TO 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case. These transistors

transistors BC 458

Abstract: BC 458 transistors BC 458 pnp transistor BC 458 BC 459 transistors BC 459 bf 478 BC479 TO-18 BC-177 pnp transistor 2N5415
Contextual Info: rZ J SGS-THOMSON ¡M »iü i g¥[M «(gS GENERAL PURPOSE & INDUSTRIAL ^7# SMALL SIGNAL TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS - TO 18 v CEO hFE mln/max ic fi% Type (mA) (V) 7> v CE(sat) max lcflB (mA) (V) «T min NF (MHz) (dB) (mW)

AAES

Abstract: V3061
Contextual Info: tì I . 2SC D • û23Sfc.0S GD0425Ô 7 H S I E â Z5C U*t258 PNP Silicon AF Transistors - BCX23 BCX 3 9 SIEMENS AKTIENGESELLSCHAF - — — =- -— BCX 2 3 and BCX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case

bc 170

Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t

SMD TRANSISTOR MARKING 2A

Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage

Y59 r 120

Contextual Info: N AUER PHILIPS/DISCRETE fe.'lE D bb53^31 DQS7bE3 245 BCY58 BCY59 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case, for use in ampli­ fier and switching applications. QUICK REFERENCE DATA

TP2222

Abstract: TP2222A TP2907A TP3116 MPS6566 TP2483 MPS6515 MPS6516 MPS6517 MPS6518
Contextual Info: ^ Econ olin e R P la stic -M o ld e d If H U U C Silicon S E P T R Transistors GENERAL-PURPOSE SMALL-!IIGNAL AMPLIFIERS >oc < o o. _i Type No. Pd D -C C U R R E N T G A IN h fE Lim ts T a = V (BR) V(BR) V(BR) I c b o C onditions VcE(SAT) 25 C C BO CEO E BO

transistor BC 245

Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Contextual Info: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the

Contextual Info: N ~7 > y 7 $ /Transistors 2SD1225M/2SD1858 '> 7 ^ 7 ° U - : J - B N P N y 'J=]> h 7 > y ^ ^ 2SD1225M 4i f,Bc 02^ 7* iillliffl/M e d iu m Power Amp. 2SD1858 Epitaxial Planar N PN Silicon Transistors SO- >4 VT.\' vjl - 7- • y |- fj\r > S 0 /D |m n s|or>s U n it: mm)

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

Contextual Info: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 *0'2 4.5 1. 6 collector power dissipation, Pc = 2 W,

symbol of Bc 148 transistor

Abstract: SOT-89 marking bc of transistor bc 148 BTB1188M3 BTD1766M3 BC 148 TRANSISTOR SOT89 bc on BC 148 TRANSISTOR
Contextual Info: CYStech Electronics Corp. Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1188M3 Features • Low VCE sat , VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics

PTH60G30BD150N

Abstract: PTH62H02AR180M265 PTH59F PTH61
Contextual Info: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage

2SB1240

Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

CSA1585BC

Abstract: CSA1585
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1585BC 9AW TO-92 BCE Marking : CSA 1585 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1585BC 9AW TO-92 BCE Marking : CSA 1585 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

2N5449

Abstract: MPS-K72 2N3694 2N3693 2N5143 2N5447 k72 npn k72 transistor Three-Five 2N5127
Contextual Info: Econoline P la stic -M o ld e d Silicon S E P T ” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package E BC Pinning D -C C U R R E N T G A IN >- Type No. cc < o CL Pd (h F E ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C C BO CEO EBO

hsk 103

Abstract: 55163 RFT Transistoren service-mitteilungen GER-A RFT HMK 100 aiwa RFT Service Mitteilung GC 6131 RFT A 210 K
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RU ND FU NK UND FERNSEH EN radio -television Ausgabe Seite 198? 1-8 Mitteilung aus dem VBB Elektronische Bauelemente Teltow Neu im Angebot des Handels Phonogerät LT - CS 01 - Vollautomatischer Tangential-Plattenspieler

BF 331 TRANSISTORS

Abstract: MC 151 transistor SMD Transistors series nc SMD MARKING CODE mc smd marking KC R K J 0822 smd diode marking KC bd 222 smd smd marking BD SMD transistor code NC
Contextual Info: NTC SMD Thermistors NC 12 – NC 20 Chip thermistors are a high quality and low cost device especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits. Its silver -

c107 TRANSISTOR equivalent

Abstract: sample programs using C in TMS320C6713 DSK RV3, SMD VF3 SH-40 panasonic inverter manual book c103 TRANSISTOR equivalent panasonic inverter manual TMS320C6416 DSK TMS320C6713 DSK module TRANSISTOR c104
Contextual Info: ADS1625 and ADS1626 EVM User’s Guide December 2003 Data Acquistion SLAU123 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

2sc6096

Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
Contextual Info: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ■ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages