BC 237 Search Results

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

T092A

Abstract: transistors BC 459
Contextual Info: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
Contextual Info: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2

BS4 siemens

Abstract: BC 241 d0415 bc167 siemens bc169c siemens BC167 BC169B BC169 siemens Pm 90 87 168c
Contextual Info: S IE D i • Ö235b05 OGMlSlb ‘î l S « S I E G SIEMENS AKTIEN6ESELLSCHAF NPN Silicon AF Transistors BC 167 . BC 169 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 257, BC 258, BC 259 PNP Type BC BC BC

BC308

Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Contextual Info: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

Contextual Info: PRO ELECTRON SERIES USE TYPE Pc Tj mA (mW) fC ) GENERAL PURPOSE *BC 167 45 100 300 150 GENERAL PURPOSE *BC 168 20 100 300 LOW NOISE *BC 169 20 50 300 GENERAL PURPOSE BC 237 45 100 300 h FE VCE (V) ic (mA) 1 Î0 -4 6 0 5 ISO 120-800 5 2 150 180-800 5 2 150

TRANSISTOR 237b

Abstract: TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B
Contextual Info: BHARAT ELEK/SE niC OND DI 4?E D • 143S3TÛ □□□□OCH 2Tb ■ VCE Si Device No 37. 38. 39. 40. 41. BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 V h FE VCEO VCBO Volts min Volts mm Volts min at bias mtn /max 45 25 25 25 25 50 30 30 30 30 5 5 5 5 5

BC238B

Abstract: BC237 BC239 BC238 MOTOROLA transistor bc237 BC238 datasheet BC237A BC238 bc237 motorola BC238B MOTOROLA
Contextual Info: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 237 BC 238 BC 239 Unit Collector – Emitter Voltage VCEO 45 25 25

MMKP 383 capacitor

Abstract: 40362 20624 BC05 BC 560 philips Philips 50153 mMKp Philips Capacitors 1043100v 40363
Contextual Info: BC COMPONENTS DATA SHEET MMKP 383 AC and pulse double sided metallized polypropylene film capacitor Product specification File under BC Components, BC05 1999 Apr 29 BC Components Product specification AC and pulse double sided metallized polypropylene film capacitor

bC 2240

Abstract: bc 147 transistor bc 457 BC 273 equivalent capacitor electrolytic BC 116 47121 Transistor BC 457 BC 116 capacitor 198 PHR-SI BC 2222 138
Contextual Info: BC COMPONENTS DATA SHEET 198 PHR-SI Aluminium electrolytic capacitors Power High Ripple Current Snap-in Preliminary specification File under BC Components, BC01 1999 Apr 27 BC Components Preliminary specification Aluminium electrolytic capacitors Power High Ripple Current Snap-in

BC238B

Abstract: BC239 BC237A BC238 BC237 bc237v
Contextual Info: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25

capacitor electrolytic BC

Abstract: capacitor electrolytic BC 116 BC 116 capacitor BC 545 BC 2222 138 BC 547 PIN DIAGRAM
Contextual Info: BC COMPONENTS DATA SHEET 198 PHR-SI Aluminum electrolytic capacitors Power High Ripple Current Snap-in Product specification Supersedes data of April 1999 File under BC Components, BC01 2000 Jan 18 BC Components Product specification Aluminum electrolytic capacitors

transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK
Contextual Info: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation

BC 2388

Abstract: BC739 BC236 BC237B 239b BC237A BC231 bc2376 06008v BC238
Contextual Info: ^ BC237 BC238 BC239 OßtCf MAXIMUM RATINGS R*l»r»V Symbol Collector-Emitter Voltage BC BC BC 237 231 239 Unit v e to 45 25 25 Vdc Collector Emitter Voltage VCfS 50 30 30 Vdc £»ni»t<r-8i*e Voltage v i9 0 6 0 SO 5.0 Vdc Collector Current - Continuous 100

2sc 9015

Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
Contextual Info: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K

transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Contextual Info: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:

transistors BC 183

Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
Contextual Info: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B