BB53131 Search Results

Contextual Info: b'lE D N AMER PHILIPS/DISCRETE • bb53131 D0277D2 m i BF494 ■ APX V _ J SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope intended fo r HF applications in radio and television receivers; it is especially recommended fo r FM tuners, low noise AM mixer-oscillators with high source

Contextual Info: T • bb53131 □ D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The

BSR175

Abstract: bsr177 BSR174 BSR176 BSJ174 IEC134 SOT-23 MARKING T31
Contextual Info: DEVELOPM ENT DATA N AnER PHILIPS/1 ISCRETE . ObE D • bb53131 OOlEflflM 3 This data sheet contains advance Information and I | BSR174 tO 177 r- — - * * - specifications are subject to.change without notice. r -

Contextual Info: •I bb53131 00245^5 *APX N AUER PHILIPS/DISCRETE BCW89 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK REFERENCE DATA

Contextual Info: bb53131 Q0SDS00 T E5E D N AMER PHILIPS/DISCRETE B U K 455-400A B U K 455-400B P o w e rM O S tra n s is to r r - j? - , 3 G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE : ObE D PowerMOS transistor • bb53131 0014651 S ■ BUZ310 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

z948

Abstract: BGY46B
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D H bb53131 0Q30234 Tb4 • APX 11 BGY46B U H F POWER AMPLIFIER MODULE UHF broadband amplifier module designed for use in mobile communication equipment operating directly from a 9.6 V electrical supply. The module w ill produce a minimum o f 1.4 W into a 50 i2

BYV22-35

Abstract: m0044 BYV22 35 max3035 BYV22 BYV22-40A RTB 17 D-10587 BYV22-30
Contextual Info: N AMER^PHILIPS/DISCRETE TOD D • bb53131 GOlDSflM 3 BYV22 SERIES J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are

AI mm sot 553

Abstract: BF620 BF621 BF622 BF623
Contextual Info: • bb53131 QDEMbEj? ÖTS H A P X N AMER PHILIPS/DISCRETE BF621 BF623 b?E » y v SILICON EPITAXIAL TRANSISTORS • F or video o u tp u t stages P-N-P transistors in a m icro m in ia tu re plastic envelope intended fo r app lica tio n in class-B video o u tp u t

Contextual Info: I N AMER PH ILIPS/D ISCR ETE DEVELOPMENT DATA TDD • D 90D bb53131 OOlOSEb T ■ 10226 D BYP59 SERIES This data sheet contains advance in form atio n and specifications are subject to change w ith o u t notice. J ULTRA FAST RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE

68c DIODE

Contextual Info: N AtlER PHILIPS/DISCRETE [i bb53131 QQEODQ6 A • BDX68; 68A BDX68B; 68C E5E D J V r- 33-31 DARLINGTON POWER TRANSISTORS P-N-P Darlingtons for audio output stages and general amplifier and switching applications. In a TO-3 envelope. N-P-N complements are BDX69, BDX69A, BDX69B and BDX69C.

Contextual Info: N AMER PHILIPS/DISCRETE bTE J> bb53131 0027554 T3fl IAPX b C b lb A SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic TO-92 envelope. N-P-N complement is BC517. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage open base

Contextual Info: PowerMOS transistor_BUZ90_ N AMER PHILIPS/DISCRETE OLE D • bb53131 0Q14S51 T ■ T -3 < p ii May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: I I N AMER PHILIPS/DISCRETE MAINTENANCE TYPE ObE D bb53131 DDlSDfll 2 PKB3003U T - 3S - O 1 ? MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.

Contextual Info: ESE D N AMER PHILIPS/DISCRETE • bb53131 ODEO4bO S B U K 454-400A B U K 454-400B P o w e rM O S tra n s is to r r - 3 ? - n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

f763

Abstract: BF763
Contextual Info: Philips Semiconductors bb53131 0 D3 1 ID 5 1 7 T M l APy Product specification NPN 2 GHz wideband transistor S BF763 N AMER PHILIPS/DISCRETE DESCRIPTION fc.'iE D PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is primarily intended for use in RF

BLV103

Abstract: MRA363
Contextual Info: bb53131 Philips Semiconductors DOSASSE 5 bT M i APX Produc^pecification BLV103 UHF power transistor N AMER P H I L I P S / D I S C R E T E b'ìE D QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. FEATURES • Internal matching for an optimum

buw13a

Abstract: Philips BUW13A BUW13
Contextual Info: i i N AUER PHILIPS/DISCRETE bb53131 QQS6547 7^5 I lAPX blE D BUW13 BUW13A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.

Contextual Info: bb53131 0020021 *1 N AMER PHILIPS/DISCRETE 5SE D J BDX91 BDX93 BDX95 V . ' T - 2 3 - / 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in TO-3 envelope for audio output stages and general-amplifier and switching applications. P-N-P complements are BDX92, BDX94 and BDX96.

t 3866 power transistor

Abstract: transistor 3866 s t 3866 transistor transistor 3866
Contextual Info: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.

transistor 1431a

Abstract: 1431A transistor
Contextual Info: N AMER PHILIPS/DISCRETE bb53131 oom*!? *i ObE D LTE42012R A T -3 3-g^r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.

Contextual Info: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bb53131 0 0 2 0 ^ 0 T ■ PowerMOS transistor Fast Recovery Diode FET BUK627-500A BUK627-500B BUK627-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

BGD102E

Abstract: BGD104E 45004B 6-32UNC-2A BGD104
Contextual Info: I f N AÎ1ER P H I L I P S / D I S C R E T E 2SE D • bb53131 QG105b3 1 I BGD102E BGD104E X CATV POWER-DOUBLER AMPLIFIER MODULES Power-doubler amplifier modules for CATV systems operating a t frequencies up to 450 MHz, BGD102E: 18,5 dB gain; BGD104E: 20,0 dB gain.